2SB553Y
Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15
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2SC3153
2SC3535
2SC3156
2SC3482
2SC3486
2SD1403
2SC3685
SDT17203
2SD1456
2SB553Y
IDB1019
RCA1C11
BU606D
SD1430
2N5849
idb553
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c845
Abstract: c846 transistor D-12 IRGBC30K C-844
Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K
O-220AB
C-848
c845
c846 transistor
D-12
IRGBC30K
C-844
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c845
Abstract: c845 TO 92 D-12 IRGBC30K C844 c847 C-844 DC MOTOR CONTROL IGBT
Text: Previous Datasheet Index Next Data Sheet PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K
O-220AB
C-848
c845
c845 TO 92
D-12
IRGBC30K
C844
c847
C-844
DC MOTOR CONTROL IGBT
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c845
Abstract: C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER
Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K
O-220AB
C-848
c845
C847
c846 transistor
C-843
C844
D-12
IRGBC30K
c844 g
C-844
C847 RECTIFIER
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C-865
Abstract: smd C865 AN-994 D-12 IRGBC30K-S SMD-220 C865 C863
Text: Previous Datasheet Index Next Data Sheet PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K-S
SMD-220
C-866
C-865
smd C865
AN-994
D-12
IRGBC30K-S
SMD-220
C865
C863
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AN-994
Abstract: IRGBC30K-S SMD-220 GC smd transistor
Text: PD - 9.1132 IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K-S
AN-994
IRGBC30K-S
SMD-220
GC smd transistor
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2n1547
Abstract: 2N1711 to3 LM390
Text: 2N1547 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1547 Availability Online Store
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2N1547
2N1547
STV3208
LM3909N
2N1711 to3
LM390
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2N158
Abstract: No abstract text available
Text: 2N158 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N158 Availability Online Store Diodes
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2N158
2N158
STV3208
LM3909N
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PXF-10
Abstract: 24VAC to 24VDC converter PXU-20 input output npn 547 transistor diagram Converter 230v to 24v Transistor z1 Current to voltage Converter 4-20mA to 0-10v 0-30V ac dc converters adjustable 0-30v power supply
Text: Signal Converters & Isolators Process Signal To Frequency Converter PXF-10 DESCRIPTION WIRING DIAGRAM Signal converter for the conversion of an analogue process signal to a pulsating 50% duty cycle transistor output. A typical application would be to convert an analogue signal from a probe to a pulsating
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PXF-10
8/10kHz
40/50Hz
0V/-10-
10VDC/0
EN61010.
IEC414
EN50081-1.
EN50082-2.
IEC68-2-3;
PXF-10
24VAC to 24VDC converter
PXU-20
input output npn 547 transistor
diagram Converter 230v to 24v
Transistor z1
Current to voltage Converter 4-20mA to 0-10v
0-30V
ac dc converters adjustable
0-30v power supply
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IRGBC30KD2-S
Abstract: GC smd diode AN-994 SMD-220
Text: PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes
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IRGBC30KD2-S
applica480V
SMD-220
IRGBC30KD2-S
GC smd diode
AN-994
SMD-220
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Untitled
Abstract: No abstract text available
Text: SGW15N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control,
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SGW15N60RUF
SGW15N60RUF
SGW15N60RUFTM
O-263
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Untitled
Abstract: No abstract text available
Text: P D - 9.1132 International d û Rectifier IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c • Short circuit rated - 1 Ops @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC30K-S
C-865
SMD-220
C-866
0020fc
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transistor c905
Abstract: igbt c905 IRGBC30KD2 C909 D-12 qe r 908
Text: International i«rJRectifier P D - 9.1107 IRGBC3ÖKD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features c VcES = 6 0 0 V • Short circuit rated -1 Ops @125°C, V GE = 15V • Swiiching-loss rating includes ail "tail" tosses
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IRGBC30KD2
C-911
TQ-220AB
C-912
transistor c905
igbt c905
C909
D-12
qe r 908
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transistor c925
Abstract: DIODE C921
Text: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30KD2-S
-10ns
D020717
SMD-220
C-928
transistor c925
DIODE C921
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850 U01
Abstract: transistor 66a
Text: International g ü Rectifier IRGPH20S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT P D - 9.1138 Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve
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IRGPH20S
400Hz)
O-247AC
4A5545E
850 U01
transistor 66a
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SOLID STATE INC
Abstract: MJ15022 15024 J15022 J15024
Text: B SO LID STATE INC. 46 FARRAND STREET Product Specification BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com MJ15022 MJ15024 Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15023; MJ15025 • Excellent safe operating area
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MJ15023;
MJ15025
MJ15022
MJ15024
SOLID STATE INC
15024
J15022
J15024
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GT123
Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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NPN110.
NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
GT123
2N2342
2SB123 transistor
AD166
ST615
2sc180
dts105
2N234
2N235
2N285
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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317A-01
Abstract: 2G0909
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line fj 4 .5 G H z @ 1 0 m A HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR d e s ig n e d p r i m a r i l y f o r u s e in M A T V / C A T V a m p li f i e r s a n d o t h e r NPN SILICO N b r o a d b a n d lin e a r a p p lic a t io n s d e m a n d in g h ig h p o w e r g a in w i t h lo w
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transistor TF78
Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
transistor TF78
AC178
ASZ16
RT150B
113003
2N2134
2s882
2SA231
GFT26 TRANSISTOR
at202
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MHT5002
Abstract: MHT5001 MHT5006 2sc113 D11C211B20 DC5501 DC6112B MD20 BSY47
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
BSW88
200MSA
15On0
BSW89
BSX81
200M5A
BSX81A
MHT5002
MHT5001
MHT5006
2sc113
D11C211B20
DC5501
DC6112B
MD20
BSY47
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AD166
Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT
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transistor c905
Abstract: No abstract text available
Text: P D - 9.1107 International Rectifier IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V c es = 6 0 0 V Short circuit rated -1 Ops @125°C, VGe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30KD2
C-911
S5452
TQ-220AB
C-912
transistor c905
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Untitled
Abstract: No abstract text available
Text: PD - 9.790 International lüHRectffier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGBC20UD2
application16
TQ-220AB
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