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    GE-3 PNP TRANSISTOR Search Results

    GE-3 PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation

    GE-3 PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor p89

    Abstract: transistor be p89
    Text: SOT89 PNP SILICON PLANAR M EDIU M POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - OCTOBER 1995 PARTMARKING DETAIL - O P89 ABSOLUTE M A X IM U M RATINGS. SY M BO L PARAM ETER C o lle cto r-B a se V o lta ge C olle ctor-E m itter V o lta ge E m itte r-B ase V o lta ge


    OCR Scan     		--500mA, transistor p89 transistor be p89 PDF

    2N4261

    Abstract: No abstract text available
    Text: 2N4261 Chip: 4.5V; 30A geometry 0014; polarity PNP 4.99 Transistors . 1 of 1 Home Part Number: 2N4261 Online Store 2N4261 Diodes C hip: 4 .5 V; 3 0 A ge o m et ry 0 0 1 4 ; po larity PNP Transistors


    Original     		2N4261 com/2n4261 2N4261 PDF

    Asy transistor

    Abstract: transistor ASY TRANSISTOR ASY 75 germanium transistor asy asy70 TRANSISTOR ASY 0.25 W asy oi TRANSISTOR Q60118-Y48-D Q60118-Y48-E Q60118-Y70-D
    Text: 2SC D • r- 3 7 - o i fl235b05 00QMGÛ7 b « S I E G PNP Transistors for Switching Applications A SY48 A SY70 - SIEMENS A K TI EN GE SE LL SCH AF Not for new design ASY 48 and ASY 70 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case


    OCR Scan     		fl235fc ASY48 ASY70 Q60118-Y82 Q60118-Y48-D Q60118-Y48-E Q60118-Y48-F Q60118-Y81 Q60118-Y70-D Q60118-Y70-E Asy transistor transistor ASY TRANSISTOR ASY 75 germanium transistor asy asy70 TRANSISTOR ASY 0.25 W asy oi TRANSISTOR Q60118-Y48-D Q60118-Y48-E Q60118-Y70-D PDF

    Untitled

    Abstract: No abstract text available
    Text: STA8550SF PNP Silicon Transistor Descriptions PIN Connection • High current applicat ion • Radio in class B push- pull operat ion 3 Feature 1 • Com plem ent ary pair wit h STC8050SF 2 SOT- 2 3 F Ordering Information Type N O. M a r k in g Pa ck a ge Code


    Original     		STA8550SF STC8050SF 150ts KSD-T5C001-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1981SF PNP Silicon Transistor Description PIN Connection • Audio power am plifier applicat ion 3 Features • High h FE : h FE= 100~ 320 • Com plem ent ary pair wit h 2SC5344SF 1 2 Ordering Information Type N O. M a r k in g SOT- 2 3 F Pa ck a ge Code


    Original     		2SA1981SF 2SC5344SF KSD-T5C082-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: ' Sv m Se m i ' SOT -23 Plastic Encapsulate Transistors 5YM5ÊMI 5EMIC0MDUCT0R MMBT2907AL GE 2 .4 1.3 T1 TRANSI ST OR PNP FEA TURES SO T-23 Power dissipation Pa 1. BASE : 0.3 W <(iflb=25'C) Collector current 2. EMITTER 3. COLLECT fcn : - 0. a OR Collector-base voltage


    OCR Scan     		MMBT2907AL -50mA, 100MHz OT-23 950TPY 037TPY 550REF 022REF PDF

    V8060

    Abstract: No abstract text available
    Text: 1989963 C E N T R A L S E M I C O N D U C T O R [CENTRAL SEMICONDUCTOR : •' • 92D 00380 T ~ 3 3~ l'ìfi'mH aOQDBfiO D41 El D41E5 D41E7 . IV n U~ir: eCKCK£5 èMtfitì&GEùÈaSigteE1SeC yi fcò'o PNP SILICON POWER TRANSISTOR Central semiconductor Corp.


    OCR Scan     		D41E5 D41E7 T0-202 D41E1 D41E7 V8060 PDF

    D40D5

    Abstract: D40D7...8 D4001 D4102 tab ic D40D1 D40D2 D40D3 D40D4 D40D7
    Text: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2


    OCR Scan     		100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 D40D5 D40D7...8 D4001 D4102 tab ic D40D7 PDF

    D40E5

    Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7
    Text: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2


    OCR Scan     		100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 D40E5 D40D14 tab ic D40D5 D4102 D40D7 PDF

    tab ic

    Abstract: D40D1 D40D2 D40D3 D40D4 D40D5 D40D7 D41D1 D41D2 D41D4
    Text: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2


    OCR Scan     		100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 23N0TE2 tab ic D40D5 D40D7 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB1017PI PNP Silicon Transistor Features • • • • PIN Connection Low sat urat ion swit ching applicat ion Power am plifier High Volt age : VCEO= - 80V Min. Com plem ent t o STD1408PI 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code


    Original     		STB1017PI STD1408PI O-220F-3L STB1017 SDB20D45 KSD-T0O110-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DTB113ZK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm • available in an S M T 3 (SMT, S C -59 ) packa ge • p a cka g e m arking: D T B 1 13ZK; G 1 1 • a built-in b ias resistor a llow s inverter circuit configuration without external


    OCR Scan     		DTB113ZK DTB113ZK PDF

    pt 100 - to92

    Abstract: pt 100 to92 MPS-A63 MPS-A64 MPSA63
    Text: G Ql E SOLID STATE 3875081 G E SOLID STATE Signal Transistors_ DE § 3û750âl □G17tn G 01E 17990 1 D _ 2.7 MPS-A63, MPS-A64 Silicon Darlington Transistors TO-92 The GE/RCA MPS-A63 and A64 are planar epitaxial passivated PNP silicon Darlington transistors designed for preamplitier input applications where high im pedance is a


    OCR Scan     		MPS-A63, MPS-A64 MPS-A63 MPS-A63 100mA 100kHz) 300ns pt 100 - to92 pt 100 to92 MPS-A64 MPSA63 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1721 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm HIGH VOLTAGE CONTROL APPLICATIONS. +0.5 2 5 - 0 .3 PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. •025 1 .5 - 0.15 CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. 960 • High V o lta ge: V q b q - —300V, V q e q = —300V


    OCR Scan     		2SA1721 --300V, --300V 2SC4497 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 • NOVEMBER 1995_Q C O M PLEM EN TA RY TYPE FM M T493 P A R T M A R K IN G D E T A IL - 593 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L C o lle cto r-B a se V o lta ge V ALUE


    OCR Scan     		FMMT593 PDF

    ge d44h11

    Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
    Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2


    OCR Scan     		D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d44h11 D44* general electric npn to-220 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 PDF

    ge d45h11

    Abstract: GE D45H2 ge d44h11 D44H8 D44H5 D45H2 D44H1 D44H2 transistor d44h11 D44H7
    Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE T yp e NPN V CEO M in. V •c C o n t. (A I 50 30 50 PNP M in . M in . 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2


    OCR Scan     		D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d45h11 GE D45H2 ge d44h11 D44H8 D44H1 D44H2 transistor d44h11 D44H7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX593 ISSUE 3 • NOVEMBER 1995_ O C O M P L IM E N T A R Y T O F M M T 4 9 3 P A R T M A R K IN G D E T A IL - P93 ABSOLUTE M A X IM U M RATINGS. PARAM ETER V A LU E SYM BO L U N IT C o lle cto r-B a se V o lta ge


    OCR Scan     		FCX593 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 O CO M PLEM ENTARY TYPE- BFN16 P A R T M A R K IN G D E T A IL S - DG BFN17 B ABSO LU TE M A X IM U M RATINGS. PARAM ETER SYM BO L V A LU E U N IT V CBO -250 V C olle ctor-E m itter V o lta ge


    OCR Scan     		BFN16 BFN17 300iis. PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR I S S U E 3 - A U G U S T 1995 _ FEATURES * H i g h V CE0 * L o w saturation v olta ge C O M P L E M E N T A R Y TYPE: - B SP 1 9 P A R T M A R K IN G D E T A IL : - B S P 1 6 ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		OT223 300ns. PDF

    D41D8

    Abstract: D41D10 transistor D41D5 tab ic ic tab 810 d28d D4102 D41D D41D4 D40D2
    Text: SILICON POWER T R A N S I S T O R S COMPLEMENTARY - 1 AMPERE Pt T c = 25°C v CEO Min. GE Type NPN PNP W h FE •c (V ) Cont. <A) hF E @ 2V , 100mA @ 2V , 1A Min. Max. M in. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D 40 D 2 - 6.25 30 1.0


    OCR Scan     		100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 I36B8I69PII D41D8 D41D10 transistor D41D5 tab ic ic tab 810 d28d D4102 D41D PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP power transistor BDP32 FEATURES • S O T223 package. DESCRIPTION P N P p o w e r tra n s is to r in a plastic S O T 2 2 3 p a c k a g e fo r ge n e ra l p u rp o s e , m e d iu m p o w e r a p p lic a tio n s .


    OCR Scan     		BDP32 OT223 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR ISSUE 3 -A U G U S T 1995 O FEA TU RES * Su ita b le for A F d riv e rs and output sta ge s * H ig h collector current and t o w V rE ,.a!, C O M P L E M E N T A R Y TYPE - BCP5- P A R T M A R K IN G D E T A IL S -


    OCR Scan     		OT223 BCP5BCP51 BCP51 -500rnA. -50mA* -500mA, -500m -150mA, -150m PDF

    2N2907

    Abstract: 935J
    Text: A L LE GR O M I C R O S Y S T E M S INC T3» D • 0 S Ü 4 33 Ô 0 0 0 3 73 1 7 ■ AL6R i PROCESS TQL Process TQL PNP Small-Signal Transistor Process T Q L is a double-diffused P N P silicon epi­ taxial planar device for low-noise, high-gain ampli­ fication, m edium -power sw itching, and ge n e ralpurpose use from dc to UHF. Process T Q L is the


    OCR Scan     		0S0433Ã 500mA 050M33Ã 2N2907 935J PDF