GE-10 TRANSISTOR Search Results

GE-10 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

GE-10 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
S5 100 B112 MT RELAY Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1	Original	VAT300 VAT300, ST-3450C E-08225 D-50677 F-93601 I-20092 B-9000 C/4566/E S5 100 B112 MT RELAY AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor	PDF
ge-20 transistor Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams Text: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching	Original		PDF
Untitled Abstract: No abstract text available Text: 2N1010 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)10 I(C) Max. (A)2.0m Absolute Max. Power Diss. (W)20m Maximum Operating Temp (øC)55õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	2N1010	PDF
Untitled Abstract: No abstract text available Text: 2N1176 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10ã V(BR)CBO (V)10 I(C) Max. (A)300m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	2N1176	PDF
IRGBC30MD2 Abstract: No abstract text available Text: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses	Original	IRGBC30MD2 10kHz) O-220AB C-364 IRGBC30MD2	PDF
c845 Abstract: c846 transistor D-12 IRGBC30K C-844 Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz	Original	IRGBC30K O-220AB C-848 c845 c846 transistor D-12 IRGBC30K C-844	PDF
transistor c900 Abstract: c897 c901 transistor transistor c904 transistor c903 C899 C9-03 transistor c902 LTA 902 TE 901 Text: PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses	Original	IRGBC20KD2 O-220AB C-904 transistor c900 c897 c901 transistor transistor c904 transistor c903 C899 C9-03 transistor c902 LTA 902 TE 901	PDF
c839 transistor Abstract: c838 transistor transistor C839 c841 transistor C839 C838 C837 c841 C839 J TRANSISTOR c842 Text: PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz	Original	IRGBC20K O-220AB C-842 c839 transistor c838 transistor transistor C839 c841 transistor C839 C838 C837 c841 C839 J TRANSISTOR c842	PDF
c838 transistor Abstract: transistor C839 c839 D-12 IRGBC20K C842 c839 transistor gc 840 C838 Text: PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz	Original	IRGBC20K O-220AB C-842 c838 transistor transistor C839 c839 D-12 IRGBC20K C842 c839 transistor gc 840 C838	PDF
transistor c900 Abstract: transistor c904 IRGBC20KD2 c897 C901 transistor c903 c901 transistor Text: PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses	Original	IRGBC20KD2 O-220AB C-904 transistor c900 transistor c904 IRGBC20KD2 c897 C901 transistor c903 c901 transistor	PDF
IRGBC30MD2 Abstract: No abstract text available Text: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses	Original	IRGBC30MD2 10kHz) O-220AB C-364 IRGBC30MD2	PDF
transistor c388 Abstract: transistor C383 a 381 c C-388 IRGPC20MD2 Text: PD - 9.1144 IRGPC20MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses	Original	IRGPC20MD2 10kHz) O-247AC C-388 transistor c388 transistor C383 a 381 c C-388 IRGPC20MD2	PDF
c845 Abstract: C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz	Original	IRGBC30K O-220AB C-848 c845 C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER	PDF
Untitled Abstract: No abstract text available Text: 2N394 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)10 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)6.0 @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.20 h(FE) Max. Current gain.150	Original	2N394	PDF

IRGPC40MD2 Abstract: No abstract text available Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1084 IRGPC40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V	Original	IRGPC40MD2 10kHz) O-247AC C-398 IRGPC40MD2	PDF
g10 smd transistor Abstract: transistor c347 SMD Transistor g10 C348 gFE smd diode AN-994 D-12 IRGBC40M-S SMD-220 c347 transistor Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses	Original	IRGBC40M-S 10kHz) SMD-220 C-348 g10 smd transistor transistor c347 SMD Transistor g10 C348 gFE smd diode AN-994 D-12 IRGBC40M-S c347 transistor	PDF
transistor C372 Abstract: c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369 Text: PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses	Original	IRGBC20MD2-S 10kHz) SMD-220 C-372 transistor C372 c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369	PDF
c337 transistor Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340 Text: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to	Original	IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340	PDF
c328 transistor Abstract: C327 IRGPC40M C327 - 25 Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1078 IRGPC40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses	Original	IRGPC40M 10kHz) O-247AC C-328 c328 transistor C327 IRGPC40M C327 - 25	PDF
IRGPH30MD2 Abstract: No abstract text available Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V	Original	IRGPH30MD2 10kHz) O-247AC C-478 IRGPH30MD2	PDF
IRGPH40MD2 Abstract: C479 Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V	Original	IRGPH40MD2 10kHz) O-247AC C-480 IRGPH40MD2 C479	PDF
ge d44h11 Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1 Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2	OCR Scan	D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d44h11 D44* general electric npn to-220 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8	PDF
A9 npn Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 10 10 2 •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 A9 npn GES93	PDF
ge d45h11 Abstract: GE D45H2 ge d44h11 D44H8 D44H5 D45H2 D44H1 D44H2 transistor d44h11 D44H7 Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE T yp e NPN V CEO M in. V •c C o n t. (A I 50 30 50 PNP M in . M in . 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2	OCR Scan	D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d45h11 GE D45H2 ge d44h11 D44H8 D44H1 D44H2 transistor d44h11 D44H7	PDF

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GE-10 TRANSISTOR Search Results

GE-10 TRANSISTOR Result Highlights (5)

GE-10 TRANSISTOR Datasheets Context Search

S5 100 B112 MT RELAY

ge-20 transistor

Untitled

Untitled

IRGBC30MD2

c845

transistor c900

c839 transistor

c838 transistor

transistor c900

IRGBC30MD2

transistor c388

c845

Untitled

IRGPC40MD2

g10 smd transistor

transistor C372

c337 transistor

c328 transistor

IRGPH30MD2

IRGPH40MD2

ge d44h11

A9 npn

ge d45h11