RG105
Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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IRGP20B120UD-E
O-247AD
20KHz
RG105
ir igbt 1200V 10A
SS850
sa wf
IRGP20B120UD-E
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IRGP20B120UD-E
Abstract: IGBT Transistor 1200V, 25A
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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IRGP20B120UD-E
O-247AD
20KHz
IRGP20B120UD-E
IGBT Transistor 1200V, 25A
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RR3020
Abstract: ga128d
Text: SKM 500 GA 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C
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Untitled
Abstract: No abstract text available
Text: IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ max = 175°C G G VCE(ON) typ. = 1.65V @ IC = 75A E E G G Gate C Collector Features Benefits High efficiency in a wide range of applications
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IRGP6690DPbF
IRGP6690D-EPbF
O-247AD
O-247AC
IRGP6690DPbF/IRGP6690D-EPbF
JESD47F)
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Untitled
Abstract: No abstract text available
Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF
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IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
IRG7PH44K10DPbFÂ
247ACÂ
IRG7PH44K10Dâ
247ADÂ
O-247AC
O-247AD
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Untitled
Abstract: No abstract text available
Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G GC VCE(ON) typ. = 1.9V @ IC = 25A E G Gate • Industrial Motor Drive
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IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
IRG7PH44K10DPbFÂ
247ACÂ
IRG7PH44K10Dâ
247ADÂ
O-247AC
O-247AD
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5n fast recovery diodes
Abstract: A197PD A197C A397 GE a197 1N3735 1N4045 A190 A197N A197
Text: RECTIFIERS io<u - 250 TO 740 A M P E R E S JEDEC GE TYPE - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110 120 145 110 100 SPECIFICATIONS Max. average forward current 1 phase ' f m ( a v operation) (A)
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1N3735-44
1N4044-56
A190A
1N3735
A197A
1N4045
A390A
A397A
A190B
1N3736
5n fast recovery diodes
A197PD
A197C
A397
GE a197
A190
A197N
A197
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tp4m
Abstract: No abstract text available
Text: 3 Q T P 4 K E S E R IE S Voltage Range 6.8 to 400 Volts 400 Watts Peak Power TRANSIENT VOLTAGE SUPPRESSOR DIODES D0-41 Features • P lastic packa ge has U n derw riters Lab ora tory Flam m ability C lassifica tion 94V -0 a 4 0 0 W surge cap a b ility a t 10 x 10Ous w a v e fo rm ,d u ty cycle:
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D0-41
10Ous
DKE24A
P4KE27
P4KE27A
P4KE30
P4KE30A
P4KE33
P4KE33A
P4KE36
tp4m
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GE SCR Manual
Abstract: "scr manual" scr manual GE A390C Rectifier Diode general electric a390e A390 ge a390t Dow corning 744 1N4053 GE SCR 1000
Text: RECTIFIERS io<u - 250 TO 740 AMPERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110
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1N3735-44
1N4044-56
A190A
1N3735
A197A
1N4045
A390A
A397A
A190B
1N3736
GE SCR Manual
"scr manual"
scr manual
GE A390C Rectifier Diode
general electric a390e
A390
ge a390t
Dow corning 744
1N4053
GE SCR 1000
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"scr manual"
Abstract: A397 Metric Torque Specifications for copper Bolts GE SCR Manual scr manual A397PB General electric SCR manual metric bolts torque m 32 A397A 1N3735
Text: RECTIFIERS 250 TO 740 AM PERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110
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1N3735-44
1N4044-56
A190A
1N3735
A197A
1N4045
A390A
A397A
A190B
1N3736
"scr manual"
A397
Metric Torque Specifications for copper Bolts
GE SCR Manual
scr manual
A397PB
General electric SCR manual
metric bolts torque m 32
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A190A
Abstract: a190d A500LC GE A390C Rectifier Diode 1N3735 1N4045 A190 A197 A197A A390
Text: RECTIFIERS 250 TO 740 AM PERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110
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1N3735-44
1N4044-56
A190A
1N3735
A197A
1N4045
A390A
A397A
A190B
1N3736
a190d
A500LC
GE A390C Rectifier Diode
A190
A197
A390
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A197P
Abstract: a197 1n3736 1N4053 A500LC GE A390C Rectifier Diode 1N3735 1N4045 A190 A190A
Text: R E C T IFIE R S 250 TO 740 A M P E R E S JEDEC GE TYPE io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110 120 145 110 100 SPECIFICATIONS Max. average forward current 1 phase ' f m ( a v operation) (A)
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1N3735-44
1N4044-56
A190A
1N3735
A197A
1N4045
A390A
A397A
A190B
1N3736
A197P
a197
1N4053
A500LC
GE A390C Rectifier Diode
A190
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a1000n
Abstract: No abstract text available
Text: discrete sensors standard photo diodes SIDE LOOKING PACKAGES OED-SP-12SF Ptef&ge Limits of Safe Operation V* Pu t-Opr Max V Max(mW) (°C) id&B* Style Voc mV Typ Side Looking Lead Frame Black Epoxy 5 30 -20 ~ + 80 400 Isc M nAMax @Vft a 10V *P xe des X nM
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OED-SP-12SF
QED-SPR472L140
OED-SPRC572L120
OED-SP-1556SN
1-B47-359-B9Q4
a1000n
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Untitled
Abstract: No abstract text available
Text: FF 100 R 06 KF 2 Electrical properties VcES Maximum rated values 600 V lc 100 A IC R M 200 A O 400 W V ge 20 V Inversdiode Inverse diode V eg 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte lF max ¡F R M t p =1 ms Maximum rated values
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10CJ5
600KF3
-FF130F
123-C,
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5202 GE
Abstract: KA 7502 STS7102 TS7101
Text: TELEFUNKEN ELECTRONIC m 44E » ñ ^ D O T b 0011175 2 B1ALG6 Infrared Emitting Diodes G aA s IR Emitting Diodes in Plastic Package Characteristics Package Type I. Dimensions see page 4 9 -5 3 at at U mW/sr mA fp= 1 0 y s /F = 1 A ns mA TV* 1 8 m m Blue p la stic p a c ka ge
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CQY37N
5202 GE
KA 7502
STS7102
TS7101
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siemens igbt BSM 300 gb
Abstract: siemens igbt BSM 300
Text: SIEMENS BSM 400 GB 60 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 400 GB 60 DN2 VCE 600V 475A Package Ordering Code HALF-BRIDGE 2 C67070-A2120-A67 Maximum Ratings
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C67070-A2120-A67
siemens igbt BSM 300 gb
siemens igbt BSM 300
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siemens igbt
Abstract: siemens igbt BSM 400 GA 120 C1645 siemens igbt BSM 200 GA 120
Text: SIEMENS BSM 400 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate UJ i? Type b 1200V 550A Package Ordering Code BSM 400 GA 120 DN2 SINGLE SWITCH C67070-A2302-A70 BSM 400 GA 120 DN2 S
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C67070-A2302-A70
C67070-A2308-A70
BSM400
siemens igbt
siemens igbt BSM 400 GA 120
C1645
siemens igbt BSM 200 GA 120
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siemens igbt BSM 150 gb 100 d
Abstract: siemens igbt BSM 100 gb siemens igbt BSM 25 Gb 100 d BSM 15 GB GB120DN2 100-GB
Text: SIEMENS BSM 100 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2 VCE h 1200V 150A Package Ordering Code HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter
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C67076-A2107-A70
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 100 gb
siemens igbt BSM 25 Gb 100 d
BSM 15 GB
GB120DN2
100-GB
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G20N50c
Abstract: 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c
Text: i \M J H A R R I S semiconductor H G TH 20N 40C 1D , H G TH 20N 40E1D , H G TH 20N 50C 1D , H G TH 20N 50E 1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aphi 1995 Features Package • 20A, 400V and 500V • ^ C E O N JEDEC TO-218AC
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OCR Scan
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PDF
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40E1D
O-218AC
HGTH20N40C1D,
HGTH20N40E1D,
HGTH20N50C1D,
HGTH20N50E1D
AN7254
AN7260)
G20N50c
20N50C1D
GE 639
1D50C
"parallel diode"
20N50E
443 20N
20n50c
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSM150 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 150 GT 120 DN2 K ce 1200V 200A Package Ordering Code
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OCR Scan
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PDF
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BSM150
C67070-A2518-A67
resista25
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = 10 Ohm Type ‘'CE BSM150GB170DN2 E3166 1700V 220A h
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PDF
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BSM150GB170DN2
E3166
E3166
C67070-A2709-A67
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Halbleiterbauelemente DDR
Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der
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siemens igbt BSM 150 Gb 160 d
Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 300 gb siemens igbt BSM 25 gb 100 d siemens igbt BSM 300
Text: SIEMENS BSM 200 GB 120 ON2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 200 GB 120 DN2 1200V 290A h Package Ordering Code HALF-BRIDGE 2 C67070-A2300-A70 Maximum Ratings Parameter
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OCR Scan
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PDF
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C67070-A2300-A70
siemens igbt BSM 150 Gb 160 d
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 300 gb
siemens igbt BSM 25 gb 100 d
siemens igbt BSM 300
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSM150GB120DN2E3166 IG B T P o w e r M odule P re lim in a ry data • H alf-bridge • Including fa st free -w h e e lin g diodes • E n larged d io d e area • P ackage w ith insulated m etal base plate T yp e ^CE BSM 150G B120DN2E3166 1200V 210A
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OCR Scan
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BSM150GB120DN2E3166
B120DN2E3166
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