70T3539M
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE IDT70T3539M Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz)(max.)
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IDT70T3539M
166MHz
133MHz)
12Gbps
AN-411,
70T3539M
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V 256/128K x 72 IDT70T3719/99M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
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256/128K
IDT70T3719/99M
166MHz
133MHz)
5T2010
5T9010
5T905,
5T9050
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2.5V 512/256/128K X 18 IDT70T3339/19/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
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512/256/128K
IDT70T3339/19/99S
200MHz
166MHz
133MHz)
14Gbps
144-pin
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simple Binary counter
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Up/Down binary counter with reset and ripple clock 74F191 PIN CONFIGURATION FEATURES • High speed -125M Hz typical f^AX w • Synchronous, reversible counting D1 H m vcc • 4-Bit binary Q i GE g d0 Q oH 23 cp
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74F191
-125M
74F191
711002b
DCH1312
500ns
SF00006
711002b
simple Binary counter
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2512D48HN
Abstract: 2503S12HN 2505D12HN 2505S12HN 2512D12HN 2512S12HN 2515D12HN 2515S12HN
Text: STANDARD 64 DC/DC CONVERTERS 2500HN series 17 to 25 watts Input Characteristics Input Under V olta ge Shutdow n: 9-1 8 ,1 8 -3 6 , 36-75 VDC 8V 9-18 , 16V (18-36), 33V (36-75) VD C Input Over V oltage Shutdow n: 20V (12Vin), 40V (24Vin), 80V (48Vin) Input Filtering:
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2500HN
12Vin)
24Vin)
48Vin)
12Vin
2512D48HN
2503S12HN
2505D12HN
2505S12HN
2512D12HN
2512S12HN
2515D12HN
2515S12HN
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L7E transistor
Abstract: BF820 BF821 BF822 BF823
Text: • bb53^31 N AMER □□2M7DM 5T2 B A P X PHILIPS/DISCRETE L7E BF821 BF823 ]> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N
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BF821
BF823
BF820,
BF822
BF821
L7E transistor
BF820
BF823
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Untitled
Abstract: No abstract text available
Text: Customer Information Sheet SHT D R A W I N G No. : M80-5T2XXXXMF SPECIFIC AT IO NS : MATERIAL: MO U LD IN G = G L A S S - F I L L E D PPS, UL94V-0, BLA CK C O N T AC T = PH O SP HO R BRONZE JACKSCREW. NUT : S TA I N L E S S STEEL F INISH CONTACTS : 05 = 0.75(i G O L D ALL OV ER
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M80-5T2XXXXMF
UL94V-0,
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40N60A
Abstract: 40n60 IXGH40N60 743e 40n60 igbt AT/40n60 igbt
Text: : Low VCE sat IGBT1 w High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 Mi2 600 V Continuous ±20 V Transient ±30 V vCGR vGES vGEM Maximum Ratings 'c25 Tc = 25°C, limited by leads
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O-247
O-204
4fciflLi25b
40N60
40N60A
40N60A
IXGH40N60
743e
40n60 igbt
AT/40n60 igbt
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BC337-01
Abstract: 2n2272 2N2246 D32K BC338-01 PT1836 PT1837 T018 2n2255 transistor u77d
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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T0106
TE3904
2N914A
2N2272
300M5A
2SC100
10B705
300MA
BC337-01
2N2246
D32K
BC338-01
PT1836
PT1837
T018
2n2255 transistor
u77d
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OP490
Abstract: No abstract text available
Text: Low-Voltage Micropower Quad Operational Amplifier OP-490 A N ALO G D EVIC ES FEATURES GENERAL DESCRIPTION • The OP-490 is a high-performance micropowerquad op amp that operates from a single supply of +1.6V to +36V or from dual supplies of +0.8V to +18V. Input voltage range includes the
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OP-490
OP-490
OP-490â
DAC-8408
0P-490
OP490
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Untitled
Abstract: No abstract text available
Text: E S C HE ELECTRONICS CORP D| ï T-U*7-l3 3037257 G Ü Ü Ü M m Q | DIGITAL DELAY LINES 8 PIN SINBLE-IN-LINE PACKAGES ' TTL COMPATIBLE 5 T A P S A N D SIN G LE OUTPUT SERIES STAIMD 5G .180 .180 MAX. MAX. W h ite Dot locates Pin 1 1.110 •1.110 8 P I N S O N
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500ppm
010th
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5T45
Abstract: 5G35 5T150 5G30 5t30 5T-35 5T50 5G75 5T100 5T25
Text: E S C E L E CT RONI C S DI I T-H*7-l3 CORP d . Vjygyosa i g i t a i : d e l a y l i n e s 8 PIIM SINGLE-IN-LINE PACKAGES BsrorJI 'x:,¿3M A 'TTl-': COMPATIBLE^ 5 TAPS AND SINGLE OUTPUT SERIES 5TAIMD 5G .810 M A X - A .180 MAX, .180 M AX. .810 M A X - .3 4 0
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T-HHT-13
5T100
5T150
5T200
5T250
500ppm/Â
010th
5T45
5G35
5G30
5t30
5T-35
5T50
5G75
5T25
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 1011-2L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 22 dBm, - Single carrier level • High power - P-|dB = 33.5 dBm at 10.7 GHz to 11.7 GHz
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1011-2L
011-2L
TIM1011-2L
MW50080196
0C7250
002227b
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IRGKI140U06
Abstract: No abstract text available
Text: International ïsr]Rectifier PD-9.964B IRGKI140U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all ''tail"
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25KHz
100KHz
IRGKI140U06
C-788
IRGKI140U06
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Untitled
Abstract: No abstract text available
Text: COM’L : -10/15/20 IN D :-18/24 M A C H 2 3 0 - 1 0 /1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 8 4 P ins ■ 6 4 O u tp u ts ■ 12 8 M a cro cells ■ 128 F lip -flo p s ; 4 c lo c k ch o ic e s
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ACH230
PAL22V10
MACH230
025752b
PQR208
208-Pin
16-038-PQR-2
PQT044
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scr vrrm 6000
Abstract: 1S697 BP107 FT250DM FT250DM-16 SCR 1A 50V
Text: "□a POWEREX INC D E I 7Sci4bai 0005^20 1 f ~ T- 2 5 —19 m jH u a w x FT250DM Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.75.15 Phase Control SCR
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T-25-19
FT250DM
BP107,
FT250DM
Amperes/200-1800
all-15
Avg/200-1800
scr vrrm 6000
1S697
BP107
FT250DM-16
SCR 1A 50V
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Untitled
Abstract: No abstract text available
Text: HARRIS H S E M I C O N D U C T O R P 2 1 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver October 1995 Description Features • I Drives N-Channel MOSFET Half Bridge The H IP 2100 is a high frequency, 100V Half Bridge N-Channel M O S F E T driver IC, available in 8 lead plastic
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00V/2A
116VDC
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servo motor AL 85
Abstract: 33030P BT Motorola
Text: <g> M O T O R O L A — — MC33030 DC Servo Motor Controller/Driver The M C33030 is a monolithic DC servo m otor controller providing all active functions necessary for a com plete closed loop system. This device consists of an o n -c h ip op amp and w indow com parator with wide input
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MC33030
C33030
MC33030
b3b72S3
Q15bl
servo motor AL 85
33030P
BT Motorola
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LT 428
Abstract: No abstract text available
Text: "□a POWEREX INC D E I 7Sci4bai 0005^20 1 f ~ T-25—19 m jH u a w x FT250DM Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMans, France (43) 72.75.15 Phase Control SCR 250 Amperes Avg
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T-25--
BP107,
FT250DM
peres/200-1800
LT 428
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h1802
Abstract: #ZZZB 5T-25 1B02b STK 027 1802A
Text: H 1 8 0 2 A /A C H 1 8 0 2 B C MICROELECTRONICS CENTER 1800 C M O S M ic ro p ro c e s s o r Fam ily C en tra l P ro ces sin g U nit DESCRIPTION H ughes 1802A is an 8 bit re g is te r-o rie n te d C entral P roce ssin g U n it CPU d e sig ned fo r use as a
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H1802A/AC
H1802BC
16x16
h1802
#ZZZB
5T-25
1B02b
STK 027
1802A
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION IO-OUTPUT CLOCK DRIVER SC3517 FEATURES GENERAL DESCRIPTION • Ten clock outputs: The SC3517 is a precision low skew clock driver with ten outputs. It requires a 2X frequency clock input from a single-ended TTL or an ECL differential source operating between +5V and ground. This 2X
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50-75il
SC3517
25-unit
28-pin
SC3517S-1/D
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 7 0 3 0 0 0 ,7 0 3 0 0 1 V851 32-/16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¡PD703000 is a p ro d u c t in the V 850 fam ily™ of 3 2 -b it sin g le -c h ip m ic ro c o n tro lle rs fo r re a l-tim e control
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32-/16-BIT
PD703000
PD703001
PD703000.
10935E
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MECL III Series
Abstract: MC1696 MC1654 MC1600 MC1651 MC1662 MC1668 MC1670 MC1672 MC1674
Text: K M DOD G flH G tL O O O INTEGRATED C IR C U ITS MC1600 Series -30°C to +85°C T h e re q u ire m e n t fo r digital systems w ith ever higher M E C L U l c irc u it design is sim ilar to th a t used in the popular M E C L 1 0 ,0 0 0 fa m ily . In the M E C L I I I line, as
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MC1600
MECL III Series
MC1696
MC1654
MC1651
MC1662
MC1668
MC1670
MC1672
MC1674
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