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    Renesas Electronics Corporation R1RW0416DGE-2LR#B1

    IC SRAM 4MBIT PARALLEL 44SOJ
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    DigiKey R1RW0416DGE-2LR#B1 Tube 104 1
    • 1 $6.38
    • 10 $5.67
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    Avnet Americas R1RW0416DGE-2LR#B1 Tray 18 Weeks 108
    • 1 $19.2
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    Renesas Electronics America R1RW0416DGE-2LR#B1 Tube 104 1
    • 1 $6.38
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    Renesas Electronics Corporation R1RP0408DGE-2LR#B1

    IC SRAM 4MBIT PARALLEL 36SOJ
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    DigiKey R1RP0408DGE-2LR#B1 Tube 100 1
    • 1 $4.37
    • 10 $3.877
    • 100 $3.75
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    Avnet Americas R1RP0408DGE-2LR#B1 Tray 18 Weeks 110
    • 1 $19.2
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    Renesas Electronics America R1RP0408DGE-2LR#B1 Tube 100 1
    • 1 $4.37
    • 10 $3.877
    • 100 $3.75
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    Renesas Electronics Corporation R1RP0416DGE-2LR#B1

    IC SRAM 4MBIT PARALLEL 44SOJ
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    DigiKey R1RP0416DGE-2LR#B1 Tube 8 1
    • 1 $6.38
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    Avnet Americas R1RP0416DGE-2LR#B1 Tray 18 Weeks 108
    • 1 $19.2
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    Renesas Electronics America R1RP0416DGE-2LR#B1 Tube 8 1
    • 1 $6.38
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    Renesas Electronics Corporation R1RW0408DGE-2LR#B1

    IC SRAM 4MBIT PARALLEL 36SOJ
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    DigiKey R1RW0408DGE-2LR#B1 Tray 1
    • 1 $6.38
    • 10 $5.67
    • 100 $5.09188
    • 1000 $4.47886
    • 10000 $4.47886
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    Avnet Americas R1RW0408DGE-2LR#B1 Tray 18 Weeks 110
    • 1 $19.2
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    Avnet Silica R1RW0408DGE-2LR#B1 20 Weeks 22
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    Renesas Electronics Corporation R1RP0408DGE-2LR#B0

    IC SRAM 4MBIT PARALLEL 36SOJ
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    Avnet Americas R1RP0408DGE-2LR#B0 Tube 4 Weeks 20
    • 1 $19.024
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    Rochester Electronics R1RP0408DGE-2LR#B0 9,064 1
    • 1 $19.13
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    • 100 $17.99
    • 1000 $16.26
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    GE 2L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    672047

    Abstract: b40 B2 RECTIFIER 400V EP102UCRC06 MCCB NON AUTO EP102UCC63 EP62 D06 EP102UCC06 GE circuit breaker epc 62 c02 EP101UCC63 EP102UCB16
    Text: GE Energy Industrial Solutions 51210 GE Energy Industrial Solutions GE Industrial Solutions Industrial Solutions formerly Power Protection a division of GE Energy, is a first class European supplier of low-voltage products including wiring devices, residential and


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    PDF EP100 EP250 R/2386/E/E 672047 b40 B2 RECTIFIER 400V EP102UCRC06 MCCB NON AUTO EP102UCC63 EP62 D06 EP102UCC06 GE circuit breaker epc 62 c02 EP101UCC63 EP102UCB16

    S5 100 B112 MT RELAY

    Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
    Text: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1


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    PDF VAT300 VAT300, ST-3450C E-08225 D-50677 F-93601 I-20092 B-9000 C/4566/E S5 100 B112 MT RELAY AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor

    1-10V dimmer

    Abstract: dimmer 1-10V design IR Receiver Modules 170 DB702 DP721R Niko Semiconductor automatic room power saving system using PIR SWC-04 GSM based home automation system smart two wire dimmer
    Text: GE Energy Industrial Solutions HabiTEQ Home & Building Automation • Energy efficiency • Outstanding comfort • Enhanced safety GE imagination at work HabiTEQ™ HabiTEQ™ - Home & Building Automation Introduction Advantages Home solution Building solution


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    PDF H-1340 B-9000 R/2371/E/X 1-10V dimmer dimmer 1-10V design IR Receiver Modules 170 DB702 DP721R Niko Semiconductor automatic room power saving system using PIR SWC-04 GSM based home automation system smart two wire dimmer

    DP721R

    Abstract: FGT312CO 0-10v dimmer circuits Niko Semiconductor FGE312ME SWC04M dimmer 1-10V design PIR SENSOR 750 s DP721RT smoke sensor
    Text: GE Energy Industrial Solutions HabiTEQ Home & Building Automation • Energy efficiency • Outstanding comfort • Enhanced safety GE imagination at work HabiTEQ™ HabiTEQ™ - Home & Building Automation Introduction Advantages Home solution Building solution


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    PDF H-1340 B-9000 R/2371/E/X DP721R FGT312CO 0-10v dimmer circuits Niko Semiconductor FGE312ME SWC04M dimmer 1-10V design PIR SENSOR 750 s DP721RT smoke sensor

    infrared security alarm

    Abstract: passive infrared motion sensor control home lighting with remote control
    Text: GE Energy Industrial Solutions HabiTEQ TM Flexible home automation for energy efficiency, safety and comfort GE imagination at work In the rhythm of your family Convenience at your fingertips 3 Leaving for work… and in a rush! 2 Order coffee from bed I 2


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    PDF H-1340 B-9000 E/2383/E/X infrared security alarm passive infrared motion sensor control home lighting with remote control

    7404

    Abstract: datasheet 7404 ED-7404
    Text: QFP LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART Lp MID HE or HD E or D e e A3=0.25 L1 β1 Lp β2 GE(D)MIN. =HE(D)MIN. −2LpMAX. MIE(ID)=GE(D)MIN. −2 β 1 I2D(E) (HD(E)MAX. +2 β 2 −MID(E)/2 b b2 e −γ b b2 Dimension Parameter


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    PDF ED-7404 7404 datasheet 7404 ED-7404

    Untitled

    Abstract: No abstract text available
    Text: 19-1206; Rev 0; 3/97 +2 .5 V t o +5 .5 V, Low -Pow e r, Single /Dua l, 8 -Bit Volt a ge -Out put DACs in µM AX Pa c k a ge The 10MHz, 3-wire serial interface is compatible with SPI /QSPI™ and Microwire™ interface standards. Double-buffered inputs provide flexibility when updating the DACs; the input and DAC registers can be


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    PDF 10MHz, MAX548A MAX549A MAX550A

    ED-7404

    Abstract: 7404 NEC 7404
    Text: QFP ランド・パターン寸法 半田付け部長さ: Lp 指定 MID HE or HD E or D e MIE or MID HE+2 β 2 or HD+2 β 2 β1 Lp β2 GE(D)MIN. =HE(D)MIN. −2LpMAX. MIE(ID)=GE(D)MIN. −2 β 1 I2D(E) (HD(E)MAX. +2 β 2 −MID(E)/2 b b2 e −γ b b2


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    PDF ED-7404 ED-7404 7404 NEC 7404

    dmo 365 r

    Abstract: dmo 365 schaltung funk AM2305 a 2305 dmo 365 r PDF download TETRA monitoring vor antenna demokratische republik Lesen Sie mehr!
    Text: 2305 Stabilock TETRA Test Set Benutzerhandbuch Firmware-Version 2.00 Hinweis Es wurde streng darauf geachtet, dass alle Angaben dieses Dokuments zum Zeitpunkt des Drucks der Richtigkeit entsprechen. Alle Informationen können jedoch ohne vorhergehende Ankündigung geändert


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    PDF 007-200-A dmo 365 r dmo 365 schaltung funk AM2305 a 2305 dmo 365 r PDF download TETRA monitoring vor antenna demokratische republik Lesen Sie mehr!

    dmo 365 r

    Abstract: am2303 dmo 365 ag 2303 KABEL KOMPLETT schaltung funk tetra dmo frequency error TETRA radio usb schema vor antenna
    Text: 2303 Stabilock TETRA Mobile Station Tester Benutzerhandbuch Firmware-Version 2.00 Hinweis Es wurde streng darauf geachtet, dass alle Angaben dieses Dokuments zum Zeitpunkt des Drucks der Richtigkeit entsprechen. Alle Informationen können jedoch ohne vorhergehende Ankündigung geändert


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    PDF 905-150-A 007-200-A dmo 365 r am2303 dmo 365 ag 2303 KABEL KOMPLETT schaltung funk tetra dmo frequency error TETRA radio usb schema vor antenna

    MXL1013

    Abstract: No abstract text available
    Text: 19-1300; Rev 0; 10/97 8 -Bit Pa ra lle l DAC in QSOP-1 6 Pa c k a ge Linearity of ±1/2LSB is guaranteed, and power consumption is less than 500µW. Monotonicity is guaranteed over the full operating temperature range. The MAX5480 can be operated in either voltage-output


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    PDF MAX5480 16-pin QSOP-16 MXL1013

    emerson rosemount

    Abstract: DPCO 05ATEX2130X PA66 - GF 25 relay
    Text: Product Data Sheet February 2015 00813-0100-4030, Rev GE Rosemount 2120 Full-featured Vibrating Fork Liquid Level Switch  Designed for operation in process temperatures of –40 to 302 °F –40 to 150 °C  Adjustable switching delay for turbulent or


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    Untitled

    Abstract: No abstract text available
    Text: ISL9R1560G2 Data Sheet Title L9R 60G bjec 5A, 0V alth ode utho eyw s tersi ge ode seO 4912.2 Features The ISL9R1560G2 is a Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse


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    PDF ISL9R1560G2 ISL9R1560G2

    LCBT67S

    Abstract: marking 3U 3T 3C diode N91E-AADA-35-1 IESNA RP 27 LRTB GFTG marking 3U 3T 3C diode 3E 3G LCBT67C LED 5050 WHITE CODE C CQ7P.EC-KSKU-5O8Q IEC62471
    Text: Light Emitting Diodes LED ge 88 - 92 11 12 Light Emitting Diodes General Information Safety Instructions The use of new chip technologies means that OSRAM LEDs are delivering higher and higher levels of optical performance. Thus, even eye safety issues might increasingly need to be considered.


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    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Advance Information Fre que ncy T im ing Ge ne rat or for Pe riphe ra ls 9 FGP2 0 5 VDDRMII RMII1 RMII0 VDDRGMII GNDRGMII RGMII1 RGMII0 SMBCLK Vtt_PWRGD/WOL_STOP# Output Features: • 1 - 0.7V current-mode differential CPU output • 6 - 50MHz RMII outputs


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    PDF 50MHz 125MHz 96MHz 33MHz 768KHz 25MHz VDD96 DOT96SST DOT96SSC

    MAX5354CUA

    Abstract: No abstract text available
    Text: 19-1167; Rev 1; 2/97 1 0 -Bit Volt a ge -Out put DACs in 8 -Pin µM AX _Fe a t ure s ♦ 10-Bit DAC with Configurable Output Amplifier The output amplifier’s inverting input is available to the user, allowing specific gain configurations, remote


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    PDF 10-Bit MAX5354/MAX5355 16-bit MAX5354CUA

    GE-SPCO

    Abstract: static var compensator GE thyristor C717 C717DA C717DB C717DC C717DD C717DE C717DP
    Text: GE-SPCO G E CO-» STATIC PUR CMPNT 3Ô7M5Ô4 oaaaaMñ ñ 2bE D C717 T‘25'20 53mm / 4.5kV THYRISTOR The GE type C717 thyristor is suitable for phase control applications such as HVDC valves, static VAR compensators and synchronous motor drives. The silicon junction is manufactured by the proven multi-diffusion process and is supplied


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    PDF 4l25l90 GE-SPCO static var compensator GE thyristor C717 C717DA C717DB C717DC C717DD C717DE C717DP

    "GE Solid state"

    Abstract: No abstract text available
    Text: 7 7 fi ISP9520/ISP9521 GE Solid State Multilevel Pipeline Register GENERAL DESCRIPTION FEATURES The ISP9520 and ISP9521 are multilevel pipeline regis­ ters implemented using Intersil’s 1.5 micron CMOS AVLSI technology. This high performance process allows the


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    PDF ISP9520 ISP9521 AM29520 "GE Solid state"

    Untitled

    Abstract: No abstract text available
    Text: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 3 Pin configuration BASE EMITTER COLLECTOR 2.6 2.4 _1.02 o.sr 0.60 0.40 _2 .00_ ABSOLUTE MAXIMUM RATINGS


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    PDF CMBT5401 23A33T4

    Untitled

    Abstract: No abstract text available
    Text: S c h e m a t ic : r' 'i .J E l e c t r i c a l S p e c if ic a t io n s : Is o la tio n V o lta ge : 1 5 0 0 V rm s Is o la tio n V o lta ge : 5 0 0 V rm s T urns R atio: TX 1CT:1CT ± 3 % CABLE SIDE OCL: 3 5 0 u H R eturn Loss In p u t to (P I+ 2 + 3 O u tp u t


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    PDF 350uH 100KHz 100rnV 10QmV 30DKHz-100MHz) 30MHz 80MHz MIL-STD-202G. UL94V-0

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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    AM29520

    Abstract: ISP9520 ISP9520CPX ISP9520IJX ISP9520MMX ISP9521 ISP9521CPX ISP9521IJX GE solid state "GE Solid state"
    Text: 7 7 ^ / fC ' • / •■- / 7 ISP9520/ISP9521 GE Solid State Multilevel Pipeline Register GENERAL DESCRIPTION FEATURES The ISP9520 and ISP9521 are multilevel pipeline regis­ ters implemented using Intersil’s 1.5 micron CMOS AVLSI technology. This high performance process allows the


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    PDF ISP9520 ISP9521 AM29520 AM29521. ISP9520CPX ISP9520IJX ISP9520MMX ISP9521CPX ISP9521IJX GE solid state "GE Solid state"

    quadrant detector

    Abstract: detector active area size nep J16QUAD-8D6-R05M-HS
    Text: J16PS Room Temperature Germanium Position Sensors j udson Figure 35-2 Example of Position Linearity • J16PS P osition S ensors A Ge position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y beam position


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    PDF J16PS quadrant detector detector active area size nep J16QUAD-8D6-R05M-HS

    quadrant detector hgcdte

    Abstract: J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier
    Text: J ^ E G zG JUDSON q Figure 29-1 Position S ensor D etector C onfiguration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y


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    PDF J16PS, J12PS, J10PS J16QUAD, J10QUAD, J15QUAD UAD-8D6-R02M J16QU AD-8D6-R05M J10QUA quadrant detector hgcdte J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier