Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GE 048 TRANSISTOR Search Results

    GE 048 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GE 048 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: No abstract text available
    Text: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC40UPbF O-220AB O-220AB O-220AB. TRANSISTOR BIPOLAR 400V 20A PDF

    transistor 20a

    Abstract: No abstract text available
    Text: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC40UPbF O-220AB O-220AB O-220AB. transistor 20a PDF

    555 triangular wave

    Abstract: No abstract text available
    Text: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC40UPbF O-220AB 555 triangular wave PDF

    f1010

    Abstract: 555 triangular wave B-989
    Text: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC40FPbF O-220AB O-220AB O-220AB. f1010 555 triangular wave B-989 PDF

    IRF1010

    Abstract: No abstract text available
    Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original
    PD-94810 IRG4BC30UDPbF O-220AB O-220AB. IRF1010 IRF1010 PDF

    IGBT 600V 12A

    Abstract: TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010
    Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original
    PD-94810 IRG4BC30UDPbF O-220AB O-220AB. IRF1010 IGBT 600V 12A TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010 PDF

    555 triangular wave

    Abstract: transistor 45 f 122 Inductive Load Driver igbt transistor
    Text: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC20UPbF O-220AB O-220AB O-220AB. 555 triangular wave transistor 45 f 122 Inductive Load Driver igbt transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC20UPbF O-220AB O-220AB PDF

    AN-994

    Abstract: IRG4BC30U-S m 60 n 03 g10
    Text: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC30U-S AN-994 IRG4BC30U-S m 60 n 03 g10 PDF

    AN-994

    Abstract: IRG4BC30U-S
    Text: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC30U-S AN-994 IRG4BC30U-S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC30U-S PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 S A 1 048 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1048©) AUDIO FREQUENCY AMPLIFIER APPLICATIONS LOW NOISE AUDIO FREQUENCY APPLICATIONS • Small Package. • High Voltage : V cE O = _ 50V (Min.)


    OCR Scan
    2SA1048 2SA1048© 2SC2458C0. 2SA1048 PDF

    MHQ6100

    Abstract: IC AL 6001
    Text: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON


    OCR Scan
    MHQ6100A MIL-S-19500/xxx O-116) MHQ6100 IC AL 6001 PDF

    MM2896

    Abstract: To206AF bo140
    Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications


    OCR Scan
    b3b75S4 MM2896 MIL-S-19500/xxx O-116) MM2896 To206AF bo140 PDF

    VQE 22

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD - 9.1085 International IsHRectifier IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400H z V CES = 1 200V


    OCR Scan
    IRGPH40S O-247AC VQE 22 PDF

    IRG4BC20W

    Abstract: No abstract text available
    Text: International I« R Rectifier PD - 9 .1 6 5 2 IRG4BC20W P R E L IM IN A R Y INSULATED GATE BIPOLAR TRANSISTOR Features Ic • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve


    OCR Scan
    IRG4BC20W --600V IRG4BC20W PDF

    6d20

    Abstract: 6D-20 IGT8D20 250M BE20 IGT8E20 VQE 23 E
    Text: IGT8D20,E20 1ST TIM S^M OIS 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 O Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan
    IGT8D20 6D20- PULSEWIDTHa60 6d20 6D-20 250M BE20 IGT8E20 VQE 23 E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1454A International IGR Rectifier IRG4 BC4 0 F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    OCR Scan
    O-22QAB 002fl0Rb PDF

    J 420 G

    Abstract: No abstract text available
    Text: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies


    OCR Scan
    pd-9165 IRG4BC40W --600V J 420 G PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1654A International I«R Rectifier IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • D e sign ed e xp ressly fo r S w itch -M od e Pow er Vqes —600V S up ply and PFC pow er factor correction a p plicatio ns • Ind u stry-b e n ch m a rk sw itch ing losses im prove


    OCR Scan
    IRG4BC40W --600V PDF

    transistor IRG4BC10UD

    Abstract: IRG4BC10UD
    Text: PD -9.1677A International TOR Rectifier IRG4BC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT F ea tu re s • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan
    IRG4BC10UD transistor IRG4BC10UD IRG4BC10UD PDF

    IOR 451

    Abstract: No abstract text available
    Text: International IQR Rectifier PD - 9 .1 4 5 4 A IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -6 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    OCR Scan
    IRG4BC40F T0-220AB IOR 451 PDF

    transistor iqr

    Abstract: g-50Q IRG4BC20U
    Text: International IQR Rectifier pd-9.i 448c IRG4BC20U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan
    IRG4BC20U TQ-220AB transistor iqr g-50Q IRG4BC20U PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -91734 International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d for m otor control, tsc =10 as, @ 3 6 0 V V CE (start , T j = 1 2 5 °C ,


    OCR Scan
    IRG4BC10KD PDF