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    a2724

    Abstract: No abstract text available
    Text: Advanced Power MOSFET S F W /I9 6 3 4 FEATURES B V dss = - 2 5 0 V • Avalanche Rugged Technology ^DS on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ VOS = -250V


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    PDF -250V 0Q4D11S SFW/I9634 GD4D117 a2724