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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b7E » • T'ìbMlMS KM6264BL/KM6264BL-L GD17472 mg CMOS SRAM 8 K x8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5(iW (typ.) LL-Version


    OCR Scan     		PDF KM6264BL/KM6264BL-L GD17472 KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bitDUAL

    Untitled

    Abstract: No abstract text available
    Text: g § "\ HIGH-SPEED y 2K X 8 FOURPORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • High-speed access — Military: 35/45ns max. — Com mercial: 25/35/45ns (max.) • Low-power operation — IDT7052S Active: 750m W (typ.) Standby: 10m W (typ.)


    OCR Scan     		PDF 35/45ns 25/35/45ns IDT7052S IDT7052L GD17472 IDT7052S/L MIL-STD-883, 108-Pin G108-1) 132-Pin