GD 510 diode
Abstract: No abstract text available
Text: SKiM 400 GD 126 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 330 / 255 660 / 510 ± 20 935 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms
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GD 510 diode
Abstract: No abstract text available
Text: SKiM 400 GD 126 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 330 / 255 660 / 510 ± 20 935 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms
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Untitled
Abstract: No abstract text available
Text: BSM 200 GD 60 DN2 IGBT Power Module Target data sheet • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GD 60 DN2 600V 235A ECONOPACK 3
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Q67050-A0010-A67
Oct-23-1997
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SKIIP DRIVER GD
Abstract: No abstract text available
Text: SKiiP 192 GD 170 - 374 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C
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skiip gd 120
Abstract: No abstract text available
Text: SKiiP 232 GD 120 - 313 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C
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15dervoltage
\marketin\datenbl\skiippac\sensor\d232gd
skiip gd 120
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Untitled
Abstract: No abstract text available
Text: SD210DE/214DE N-CHANNEL LATERAL DMOS SWITCH PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max () Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS=10V 0.5 2 SD214DE 20 1.5 45 @ VGS=10V 0.5 2 Features Benefits Applications • Ultra-High Speed Switching—tON: 1ns
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SD210DE/214DE
SD210DE
SD214DE
SD210DE
214DE
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Untitled
Abstract: No abstract text available
Text: SD210DE/214DE N-CHANNEL LATERAL DMOS SWITCH PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS=10V 0.5 2 SD214DE 20 1.5 45 @ VGS=10V 0.5 2 Features Benefits Applications • Ultra-High Speed Switching—tON: 1ns
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SD210DE/214DE
SD210DE
SD214DE
SD210DE/214DE
214DE
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Untitled
Abstract: No abstract text available
Text: SD210DE/214DE N-CHANNEL LATERAL DMOS SWITCH PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS=10V 0.5 2 SD214DE 20 1.5 45 @ VGS=10V 0.5 2 Features Benefits Applications • Ultra-High Speed Switching—tON: 1ns
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SD210DE/214DE
SD210DE
SD214DE
25-year-old,
SD210DE
214DE
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Untitled
Abstract: No abstract text available
Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) C rss Max (pF) 1.5 rDS(on) Max (Ω) 15 45 @ V GS=10V SD211DE 30 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V
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SD-SST211/213/215
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
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Untitled
Abstract: No abstract text available
Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) C rss Max (pF) 1.5 rDS(on) Max () 15 45 @ V GS=10V SD211DE 30 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V 0.5
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SD-SST211/213/215
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
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SD5001I
Abstract: SD5400CY
Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2 SD5001N
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SD5000/5001/5400/5401
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
25-year-old,
SD5001I
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Untitled
Abstract: No abstract text available
Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max ( ) C rss Max (pF) SD211DE 30 1.5 45 @ VGS=10V 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V 0.5 2
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SD-SST211/213/215
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
25-year-old,
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PDF
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Untitled
Abstract: No abstract text available
Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max (Ω) C rss Max (pF) SD211DE 30 1.5 45 @ VGS=10V 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V 0.5
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SD-SST211/213/215
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
25-year-old,
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PDF
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sd211de
Abstract: No abstract text available
Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2 SD5001N
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SD5000/5001/5400/5401
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
25-year-old,
sd211de
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Untitled
Abstract: No abstract text available
Text: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V
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IRF7421D1PbF
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: PD- 91411D IRF7421D1 FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V RDS on = 0.035Ω
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91411D
IRF7421D1
EIA-481
EIA-541.
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EIA-541
Abstract: IRF7421D1 IRF7807D1 807d1
Text: PD- 91411D IRF7421D1 FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V RDS on = 0.035Ω
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91411D
IRF7421D1
EIA-481
EIA-541.
EIA-541
IRF7421D1
IRF7807D1
807d1
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5M MARKING CODE SCHOTTKY DIODE
Abstract: HEXFET SO-8 marking ky fet MOSFET SO-8 IRF7807D1 EIA-541 807D1
Text: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free Description A A D A 1 8 S 2 7 D S 3 6 D G 4
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IRF7421D1PbF
EIA-481
EIA-541.
5M MARKING CODE SCHOTTKY DIODE
HEXFET SO-8
marking ky fet
MOSFET SO-8
IRF7807D1
EIA-541
807D1
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GB 44-706
Abstract: 44-706 P 131 GB g8hz GB 44706A G2010 G-45706A 13302 GA44.706A M6HZ
Text: i VR TYPES v eff recommandée V RRM V 0,7 A * GA GB GD GF t amb = 80°C tamb = 80°C (A) (A) 10 ms Diodes @ \/ r 25°C IfJA) (A) 125°C ImA) TYPES Q 100 200 400 600 GO 13.302 GF 13.302 GH 13.302 2,7 A 50 80 150 250 0,3 1,25 4 10 CONTROLLED AVALANCHE SERIE
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OCR Scan
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10/is)
G-12302
G-20602A
G-22602A
G-26702A
G-27702A
G-44706A
G-45706A
GB 44-706
44-706
P 131 GB
g8hz
GB 44706A
G2010
G-45706A
13302
GA44.706A
M6HZ
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skiip 23 ac 128 t 2
Abstract: skiip 23 ac 128 t 3
Text: SEMIKRON SKiiP 192 GD 170 - 374 CTV Absolute Maximum Ratings Symbol j Conditions 11 Values Units 1700 1200 150 - 4 0 . . +150 4000 150 300 1450 10,5 V V A °C IGBT & Inverse Diode V ces V c c s| lc T 3' V iso ) 41 If If m If s m f t Diode) Operating DC link voltage
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OCR Scan
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semikron skiip 232
Abstract: semikron skiip 31
Text: SEMIKRON SKiiP 232 G D 120 - 313 CTV Absolute Maximum Ratings Symbol Values Units 1200 900 200 - 4 0 . + 150 3000 5 200 400 1450 10,5 V V A °c V A A A kA2s typ- Units |Conditions11 IGBT & Inverse Diode VcES V c c 9) lc T j 31 V is o t 4) If Ifm Ifsm f t Diode)
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OCR Scan
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WT 7520
Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Text: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature
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OCR Scan
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T-Ol-01
-28-Unt-2A-
453/JJ5Ã
422M0
T0-94
h-755
WT 7520
diode lt 8220
SAC 1630 L
saa 1070
tic125
tsumu
T920 thyristor
GE 1780 scr
3f scr thyristor
power diode 1000 volt 700 amper
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zd2500
Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Text: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS
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OCR Scan
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T-Ol-01
1001b.
254-turns
zd2500
WT 7520
CS 601 thyristor
TIC125
T920 thyristor
power diode 1000 volt 700 amper
thyristor 100 amper
diode lt 8220
cs 1694 eo
saa 1070
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Untitled
Abstract: No abstract text available
Text: tyvvys S IRFP240, IRFP241, IRFP242, IRFP243 Semiconductor y y 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 18A and 20A, 200V and 150V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFP240,
IRFP241,
IRFP242,
IRFP243
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