thyristor SCR 600V 8A
Abstract: Gate Turn-off Thyristor 8TWS04S 8TWS06S 8TWS08S AN-994
Text: Preliminary Data Sheet I2132 11/97 SAFEIR Series 8TWS.S PHASE CONTROL SCR VT < 1.2 V @ 8A ITSM = 120A VR / VD = up to 800V Description/Features The 8TWS.S SAFEIR new series of silicon controlled rectifiers in D-Pak, are specifically designed for low power switching and phase
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I2132
O-252AA
thyristor SCR 600V 8A
Gate Turn-off Thyristor
8TWS04S
8TWS06S
8TWS08S
AN-994
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40TPS12
Abstract: 40TPS08 scr 40tps12 035H 40TPS 40TPS08A
Text: Bulletin I2107 rev. F 03/03 SAFEIR Series 40TPS. PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 800 - 1200V Description/ Features The 40TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications.
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I2107
40TPS.
O-247
40TPS08A
40TPS12
40TPS08
scr 40tps12
035H
40TPS
40TPS08A
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40TPS12A
Abstract: 40TPS08 40TPS12 035H 40TPS 40TPS08A 800v, 40a scr
Text: Bulletin I2107 rev. G 09/03 SAFEIR Series 40TPS. PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 800 - 1200V Description/ Features The 40TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications.
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I2107
40TPS.
O-247
40TPS08A
40TPS12A
40TPS12A
40TPS08
40TPS12
035H
40TPS
40TPS08A
800v, 40a scr
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IRF7524D1
Abstract: No abstract text available
Text: PD -91648B IRF7524D1 PRELIMINARY FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V
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-91648B
IRF7524D1
forward-481
IRF7524D1
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ir*526
Abstract: HEXFET SO-8 IRF7526D1
Text: PD -91649B IRF7526D1 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -30V
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-91649B
IRF7526D1
forwar-481
ir*526
HEXFET SO-8
IRF7526D1
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IRF7521D1
Abstract: ba 7321
Text: PD- 91646B IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A
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91646B
IRF7521D1
forward-481
IRF7521D1
ba 7321
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IRF7523D1
Abstract: No abstract text available
Text: PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 30V
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91647C
IRF7523D1
IRF7523D1
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40TPS12A
Abstract: 40TPS12 scr 40tps12 035H 40TPS 40TPS08 40TPS08A 800v, 40a scr
Text: Bulletin I2107 rev. G 09/03 SAFEIR Series 40TPS. PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 800 - 1200V Description/ Features The 40TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications.
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I2107
40TPS.
12-Mar-07
40TPS12A
40TPS12
scr 40tps12
035H
40TPS
40TPS08
40TPS08A
800v, 40a scr
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IRF7523D1
Abstract: No abstract text available
Text: PD- 91647C IRF7523D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A
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91647C
IRF7523D1
IRF7523D1
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96176
Abstract: No abstract text available
Text: PD -96176 IRF7524D1GPbF FETKYTM MOSFET & Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Halogen-Free A A S G 1 8 K 2 7 K 3 6
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IRF7524D1GPbF
EIA-481
EIA-541.
96176
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EIA-541
Abstract: xf 017 A10160 ma892
Text: PD -96176 IRF7524D1GPbF FETKYTM MOSFET & Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Halogen-Free 1 8 K A 2 7 K S 3 6 D G
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IRF7524D1GPbF
EIA-481
EIA-541.
EIA-541
xf 017
A10160
ma892
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skb 28/08
Abstract: Semikron SKB 28/12 skb 28/04 SKB 28/12 skch 28-04 SKBH28 SKBT28 SKCH28 Semikron SKBT 28 skbz 25 12
Text: SEMIKRON V d rm Id Tease V r sm SEMIPONT 1 Controllable Bridge Rectifiers = 89 °C, full conduction 28 A V r rm 400 V 600 V 800 V 1200 V 1400 V SKBT 28/06 SKBT 28/08 SKBT 28/12 SKBT 28/14 SKBH 28/06 SKBH 28/08 SKBH 28/12 SKBH 28/14 SKBZ 28/04 SKBZ 28/06
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13bb71
P5A/100
P13A/125
P1A/120
11Hillâ
13bti71
SKBH28
SKCH28
skb 28/08
Semikron SKB 28/12
skb 28/04
SKB 28/12
skch 28-04
SKBH28
SKBT28
SKCH28
Semikron SKBT 28
skbz 25 12
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Untitled
Abstract: No abstract text available
Text: s EMIKRO n V drm Id Tease = 89 °C, full conduction V rsm V rrm 28 A 400 V 600 V SKBT 28/06 SEMIPONT 1 Controllable Bridge Rectifiers SKBZ 28/04 SKCH 28/04 SKBH 28/06 SKBZ 28/06 SKCH 28/06 800 V SKBT 28/08 SKBH 28/08 SKBZ 28/08 SKCH 28/08 1200 V SKBT 28/12
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P5A/100
P13A/125
P1A/120
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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Untitled
Abstract: No abstract text available
Text: A13LL71 V rsm V rrm Vdrm V 500 700 900 1100 1300 V 400 600 800 1000 1200 1500 1700 1400 1600 V/ JS 500 500 500 500 500 1000 1000 1000 Sin. It s m Tvj 180; (Tease = • • • Tvj = = = = tgd Tvj = 25 °C; tgr Vd T Vj i2t T vj 25 °C; 130 °C; 25 °C; 130 °C;
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A13LL71
613bb71
GDD474A
613bb71
B3-11
SKT16
SKT24
BS3934
SO-35A
O-208
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SKT300
Abstract: SKT250 SKT30 SKT300-06C SKT250/08C Semikron SKT 250/08C SKT250-06C SKT300-08C semikron skt 900 skt 2500 semikron
Text: T V rsm o | ai3bb?i aaaisas 1 | „ s e MIKRON S '\°\ — ise SEMIKRON INC - 2 . maximum values for continuous operation 375 A | 450 A | 550 A Itrms V rrm V dt /c r V drm 240 A (78 °C) 180; Tease 2=3 .°C) 285 A (77 °C) 350 A (85 °C) 200 SKT 215/04 C
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SKT250/04
SKT300/04
SKT250/06
SKT300/06
SKT300/08
SKT300/12
SKT250/16
SKT215
SKT250
B3-31
SKT300
SKT30
SKT300-06C
SKT250/08C
Semikron SKT 250/08C
SKT250-06C
SKT300-08C
semikron skt 900
skt 2500 semikron
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SKT240
Abstract: SKT491/18E SKT491/12E SKT551/16E b337 KT340 SKT490 SKT551/18E SKT240/04D SKT240/14E
Text: SEM IKR O N 1SE INC D I A13bfa71 'T-zs-ioi Vrsm Vrrm Vdrm i\ d- t /ic r maximum values for continuous operation 600 A I 700 A (sin. 180;Tcase = • • •! DSC) 380 A (60 °C) 450 A (57 °C) Itrm s Itav V V V/ns 500 400 500 SKT 240/04 D SKT340/04 D 900
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SKT340/04
SKT340/08
SKT340/12
SKT340/14
SKT240/16
SKT340/16
SKT240/18
SKT340/18
SKT240
B3-37
SKT491/18E
SKT491/12E
SKT551/16E
b337
KT340
SKT490
SKT551/18E
SKT240/04D
SKT240/14E
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SKDH 115
Abstract: diode b71 SKUT35 skdt35
Text: SEMIKRON INC 3bE D fll3bb?l 0Q0EA2Q S M S E K G • _ ^ Id Tease VO RM = .;fullcond uction Irm s = 83 °C) 35 A (Tease V rsm 35A(94°C) V rrm 800 V 1200 V 1400 V SKDT 35/08 SKDT 35/12 SKDT 35/14 SKDH 35/08 SKDH 35/12 SKDH 35/14 Symbol Conditions Tease
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P1/120
P1/120
SKDH 115
diode b71
SKUT35
skdt35
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thyristor SCR 600V 8A
Abstract: No abstract text available
Text: Preliminary Data Sheet 12132 11/97 Inte rn ation a l I ö R Rectifier SAFElR Series 8TWS.S PHASE CONTROL SCR vT < 1.2 V @ 8A ^TSM = 120A V R/ V D = up to 800V Description/Features The 8TWS.S SAFER new series of silicon controlled rectifiers in D-Pak, are specifically
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O-252AA
thyristor SCR 600V 8A
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skch26
Abstract: B1151 BH26 BH-26
Text: SEMIKRON INC 3bE » • fliabb?! OGGEfllb 3 ■ SEKG s e MIKRDn r r - Z 5 V drm Id Tease = 89 °C, full conduction V rsm V rrm 28 A 400 V SKBT 26/04 S K B H 26/04 S K C H 26/04 600 V S K B T 26/06 S K B H 26/06 S K C H 26/06 S K C H 27/06 800 V SKBT 26/08
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SKBT26
SKCH26
P1/120
00V/ps
50mA/15Q
B13bfa71
fil3bb71
SKYT35
M7-K16-5?
B1151
BH26
BH-26
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28xq
Abstract: SKBT28/08
Text: s e MIKRON V drm V rsm V rrm I d T e a se = 89 °C, full conduction 28 A SKBZ 28/04 SKCH 28/04 600 V SKBT 28/06 SKBH 28/06 SKBZ 28/06 SKCH 28/06 800 V SKBT 28/08 SKBH 28/08 SKBZ 28/08 SKCH 28/08 1200 V SKBT 28/12 SKBH 28/12 SKBZ 28/12 SKCH 28/12 1400V SKBT 28/14
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SKBT28
P1/120
00V/ps
SKBH28
SKBZ28
28xq
SKBT28/08
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34A65
Abstract: skch4012 P5100 semikron skch 20 12 Semikron SKB b 80 semikron skd 30 P13125 semikron skb 30 semikron skb 60 25A45
Text: S EM IK R O N D V drm V rsm Tease = .°C, full c o n d u c tio n 40 A (92 °C) 40A (92°C ) 60A (86°C ) 100A(84°C) 400 V SKCH 40/04 SKBT 40/04 SKDT 60/04 SKDT 100/04 800 V 1200 V 1400 V SKCH 40/08 SKCH 40/12 SKCH 40/14 SKBT 40/08 SKBT 40/12 SKBT 40/14
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SKBT40
1100A2s
SKDT60
3600A2s
P13/125
P1/120
P1/120
34A65
skch4012
P5100
semikron skch 20 12
Semikron SKB b 80
semikron skd 30
P13125
semikron skb 30
semikron skb 60
25A45
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2sd 5200
Abstract: SKT300 skt 2500 semikron skt 450 semikron skt 24 SKT250 to-209ad C450A M24-P 2sd 209 l
Text: S1E D Ö13bb71 DOOBMfib a 77 s e m ik r g n SEMIKRON INC V rsm Itrm s V rrm iV-dt i/or V drm maximum values for continuous operation 450 A I 550 A (sin. 180; Tease “ . .°C) 285 A (77 °C) 350 A (85 °C) Ita v V V V/ns 500 400 200 SKT250/04 C SKT300/04 C
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ai3bb71
SKT250/04
SKT250/12
SKT300/04
SKT300/08
2sd 5200
SKT300
skt 2500 semikron
skt 450
semikron skt 24
SKT250
to-209ad
C450A
M24-P
2sd 209 l
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Untitled
Abstract: No abstract text available
Text: s e m ik r d n fll3bt.71 GOOS'm 732 • V rsm V rrm V drm W er V V V/|is 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 500 500 500 1000 1000 1000 Itrm s maximum values for continuous operation 220 A | 280 A Itav (sin. 180; case = . . . °C) 140 A (80 °C)
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A13bb71
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