HS350
Abstract: VP215
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8204TK VARIABLE GAIN AMPLIFIER FOR TRANSMITTER AGC DESCRIPTION The µPC8204TK is a silicon monolithic integrated circuit designed as variable gain amplifier. The package is 6-pin lead-less minimold suitable for surface mount.
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PC8204TK
PC8204TK
PC8119T
PC8120T,
HS350
VP215
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DFT301-801X7R102S50
Abstract: DFT301-801X7R S21-Frequency DFT301801X7R GRM39 GRM40 marking C8 amplifier ghz transmitter receiver 35369
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8204TK VARIABLE GAIN AMPLIFIER FOR TRANSMITTER AGC DESCRIPTION The µPC8204TK is a silicon monolithic integrated circuit designed as variable gain amplifier. The package is 6-pin lead-less minimold suitable for surface mount.
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PC8204TK
PC8204TK
PC8119T
PC8120T,
DFT301-801X7R102S50
DFT301-801X7R
S21-Frequency
DFT301801X7R
GRM39
GRM40
marking C8 amplifier
ghz transmitter receiver
35369
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2106TB,
PG2110TB
PG2106TB
PG2110TB
PG2106TB
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DFT301-801X7R102S50
Abstract: DFT301 GRM39 GRM40 DFT301-801X7R
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8204TK VARIABLE GAIN AMPLIFIER FOR TRANSMITTER AGC DESCRIPTION The µPC8204TK is a silicon monolithic integrated circuit designed as variable gain amplifier. The package is 6-pin lead-less minimold suitable for surface mount.
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PC8204TK
PC8204TK
PC8119T
PC8120T,
DFT301-801X7R102S50
DFT301
GRM39
GRM40
DFT301-801X7R
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PDF
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MARKING G1V
Abstract: marking G1Y G1V GRM39CH020C50PB RR0816P-102-D
Text: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2106TB,
PG2110TB
PG2106TB
PG2110TB
PG2106TB
MARKING G1V
marking G1Y G1V
GRM39CH020C50PB
RR0816P-102-D
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PDF
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DFT301-801X7R102S50
Abstract: DFT301 DFT301-801X7R DFT301801X7R GRM39 GRM40 Murata GRM39
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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marking g2p
Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2130TB
PG2130TB
marking g2p
diode gp 429
TFL0816-3N3
TFL0816-6N8
TFL0816-8N2
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PDF
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TFL0816-2N7
Abstract: diode gp 429 TFL0816-1N0 Marking g3b
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2134TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2134TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin
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PG2134TB
PG2134TB
TFL0816-2N7
diode gp 429
TFL0816-1N0
Marking g3b
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PDF
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diode gp 429
Abstract: HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2135TK L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2135TK is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin
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PG2135TK
PG2135TK
diode gp 429
HS350
VP215
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PDF
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TFL0816-2N7
Abstract: TFL0816-6N8 TFL0816-8N2 marking g2m
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2128TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2128TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2128TB
PG2128TB
TFL0816-2N7
TFL0816-6N8
TFL0816-8N2
marking g2m
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PDF
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GRM39CH
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3219GV GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER DESCRIPTION The µPC3219GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem systems. This IC consists of gain control amplifier and video amplifier.
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PC3219GV
PC3219GV
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VP215
Abstract: 10-PIN TFL0816-15N
Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT µPG2301TQ POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2301TQ is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed
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PG2301TQ
PG2301TQ
10-pin
VP215
TFL0816-15N
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PDF
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marking G4E
Abstract: VP215 HS350
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2141T5B L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2141T5B is a GaAs MMIC for PA driver amplifier witch was developed for mobile phone and another Lband application. This device realizes high gain and low distortion.
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PG2141T5B
PG2141T5B
marking G4E
VP215
HS350
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT µPG2301T5L POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2301T5L
PG2301T5L
12-pin
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GRM39CH
Abstract: Susumu Marking TFL0816-3N9 diode gp 429 TFL0816-12N TFL0816-22N TFL0816-27N TFL0816-33N TFL0816-5N6 TFL0816-6N8
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2132TQ L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2132TQ is GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.
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PG2132TQ
PG2132TQ
10-pin
GRM39CH
Susumu Marking
TFL0816-3N9
diode gp 429
TFL0816-12N
TFL0816-22N
TFL0816-27N
TFL0816-33N
TFL0816-5N6
TFL0816-6N8
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UPG2250T5N
Abstract: uPG2250 UPG2250T5N-E2A UPG2250T5N-E2-A J0123
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2250T5N 1.8 V, POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power.
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PG2250T5N
PG2250T5N
UPG2250T5N
uPG2250
UPG2250T5N-E2A
UPG2250T5N-E2-A
J0123
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The μPG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2314T5N
PG2314T5N
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617DB-1010
Abstract: HS350
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3221GV GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER DESCRIPTION The µPC3221GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem systems. This IC consists of gain control amplifier and video amplifier.
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PC3221GV
PC3221GV
617DB-1010
HS350
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PDF
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617DB-1010
Abstract: HS350 Electronic transformer WT
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3217GV, µPC3218GV GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER DESCRIPTION The µPC3217GV, µPC3218GV are silicon monolithic ICs designed for use as AGC amplifier for digital CATV, cable modem systems. These ICs consist of gain control amplifier and video amplifier.
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PC3217GV,
PC3218GV
PC3218GV
617DB-1010
HS350
Electronic transformer WT
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PDF
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UPC3218
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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GRM39CH
Abstract: marking g2p TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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