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    GC57 Search Results

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    GC57 Price and Stock

    Carling Technologies TIGC57-6S-BL-NBL

    SWITCH ROCKER SPDT 15A 125V
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    DigiKey TIGC57-6S-BL-NBL Bulk 10
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    Mouser Electronics TIGC57-6S-BL-NBL
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    Master Electronics TIGC57-6S-BL-NBL
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    • 100 $7.7
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    Infineon Technologies AG SIGC57T120R3LEX1SA3

    IGBT 1200V 50A DIE
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    Avnet Americas SIGC57T120R3LEX1SA3 Waffle Pack 4,122
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    Infineon Technologies AG SIGC57T120R3X1SA1

    Trans IGBT Chip N-CH 1.2KV DIE - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC57T120R3X1SA1)
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    Infineon Technologies AG SIGC57T120R3EX1SA4

    Trans IGBT Chip N-CH 1200V 50A DIE Waffle - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC57T120R3EX1SA4)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIGC57T120R3EX1SA4 Waffle Pack 20 Weeks 4,122
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    Infineon Technologies AG SIGC57T120R3LX1SA2

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC57T120R3LX1SA2)
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    Find more GC57 price and stock on Findchips.com

    GC57 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GC570 GENNUM DynamEQ II WDRC IC Original PDF

    GC57 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hearing instrument WDRC

    Abstract: GB570 GC570 50k variable resistor connection 42K8
    Text: DynamEQ II WDRC IC GB570/GC570 - DATA SHEET FEATURES DEVICE DESCRIPTION • dual channel signal processing The DynamEQ® II product family is a second generation Wide Dynamic Range Compression WDRC system. • 2nd (4th) order state variable filter GB570 (GC570) incorporates 12 dB/oct (24 dB/oct) filtering


    Original     		PDF GB570/GC570 GB570 GC570) C-101, hearing instrument WDRC GB570 GC570 50k variable resistor connection 42K8

    RTL8111D

    Abstract: PQ2000 up7711 PD8001 kb3925 asus schematic LG lcd backlight inverter RTL8111DL ADP3208J vga nvidia
    Text: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH Cantiga


    Original     		PDF KB3925 12VSUS PR136 PD8001 PC8002 PR280 PR8004 PR282 PU8001 PU8002 RTL8111D PQ2000 up7711 PD8001 kb3925 asus schematic LG lcd backlight inverter RTL8111DL ADP3208J vga nvidia

    kb3925

    Abstract: isl6262acrz EC-IT8752 pc817 s6 Asus RTL8111C-GR sr7012 asus schematic diagram intel GM45 cantiga asus f3s
    Text: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 3 6 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH


    Original     		PDF KB3925 12VSUS 1SS355 GC147 033U/16V PMN45EN 100KOHM SI4800BDY kb3925 isl6262acrz EC-IT8752 pc817 s6 Asus RTL8111C-GR sr7012 asus schematic diagram intel GM45 cantiga asus f3s

    SiS968

    Abstract: kb3925 88E8056 t1733 SIS672 INVERTER BOARD Asus A6 ASUS ALC888-GR GC105 NC108
    Text: D C B A 5 Internal KB CRT LCD DDR2 32MX16M X4 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.28 07:26:12 +07'00' CBB Touch Pad Synaptics EC SPI FLASH 4 ATI GPU M72-S ࣯ࣳࣞ࣪ ࣰࣩࣳ࣡ 632 BGA Debug Connector


    Original     		PDF 9LPR600C Z62Ha 32MX16M 9P935AF SIS672 M72-S MAX6657MSA 667MHz/533MHz 133MHz SiS968 kb3925 88E8056 t1733 SIS672 INVERTER BOARD Asus A6 ASUS ALC888-GR GC105 NC108

    GC114

    Abstract: 88E8056 ASUS 88e8056 Marvell Marvell 88E8056 asus f3 NB8M hr5 connector Intel PM965 NB-965GM1-FSB
    Text: 5 RTC_BTY PCB 4 PART for BOM only Function Function ASUS Partnumber LOCATION RTC BTY 07G016412032 GPU NB8M 02G190012900 2 1 Temp Modify 1012: Delete EC23,31,32,34,39 already have in location Delete EC35,36 No space to add Delete GC114,115,120,121,122,123,116,117,118,119 No space


    Original     		PDF 07G016412032 02G190012900 GC114 ICS9LPR363AGLF-T Z37S/E 32Mx16 PM965 /GM965 TL431 AP9452GG 88E8056 ASUS 88e8056 Marvell Marvell 88E8056 asus f3 NB8M hr5 connector Intel PM965 NB-965GM1-FSB

    BUL48

    Abstract: No abstract text available
    Text: S * 5 G S - T H O M S O N ¡^ O T e « S 7 B U L48 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSW ITCHING TRAN SISTO R . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS • MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS


    OCR Scan     		PDF BUL48 BUL48 O-220 gc25780 712T237

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    5252 F 0921

    Abstract: No abstract text available
    Text: LFOOAB/C SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT . VERY LOW DROPOUT VOLTAGE 0.45V . VERY LOW QUIESCENT CURRENT (TYP. 50 nA IN OFF MODE, 500|^A IN ON MODE) . OUTPUT CURRENT UP TO 500 mA . LOGIC-CONTROLLED ELECTRONIC SHUTDOWN . OUTPUT VOLTAGES OF 1.25; 1.5; 2.5; 2.7; 3;


    OCR Scan     		PDF O-220, ISOWATT220, 0068772-B 0078180/B 5252 F 0921

    BACC47EF1

    Abstract: BACC47 BACC66 TRI-STAR BACC47EG1 BACC47EF3 BACC47EG BACC47EF2 arinc 600 coax pin size 8 317-2222-301
    Text: ARINC 404 Types: • Environmental • Non-Environmental Shell Configurations: • Plug / Receptacle Pin or Socket S One Gang, type “A” Shell S One Gang, type “B” Shell S Two Gang, type “B” shell S Three Gang, type “B” shell S Four Gang, type “B” shell


    OCR Scan     		PDF

    2d6 transistor

    Abstract: No abstract text available
    Text: f Z 7 S G S -T H O M ^ 7# S O N [» » fflL IO T l !* ! S TB 8 N A 50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB8NA50 Vdss RDS on Id 500 V < 0.85 Û 8A TYPICAL R d s (o ii) = 0.7 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    OCR Scan     		PDF STB8NA50 O-262) O-263) O-263 2d6 transistor

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS


    OCR Scan     		PDF BUL216

    Untitled

    Abstract: No abstract text available
    Text: [ f W Q J M t S T IP IM S W U IW 80C186EB-16, -13, -8 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR • Full Static Operation • True CMOS Inputs and Outputs • • 40°C to + 85°C Operating Tem perature Range In te g ra te d F e a tu re S et — L o w -P o w e r S ta tic CPU C o re


    OCR Scan     		PDF 80C186EB-16, 16-BIT 16-Blt

    Untitled

    Abstract: No abstract text available
    Text: LORAL m C R O ü J A VE-FS I SIE D • S S aD 13 a O D D D 4 t ä 44b "T - 0-7 -1 1 HIGH POWER POSITIVE BIAS PLATED HEATSINK GUNN DIODES DESCRIPTION APPLICATIONS T he FSI S e m ico n d u cto r Plated H eatsin k d io d e chip consists o f a silver h eat sink chem ically b o n d e d t o th e b u lk se m ico n d u ctor


    OCR Scan     		PDF 55fl013D 006NO«

    TRANSISTOR BO 352

    Abstract: BUL510
    Text: SGS-THOMSON iiueraoowgi *7/ BUL510 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSWITCHING TRANSISTOR . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS . MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS i VERY HIGH SWITCHING SPEED:


    OCR Scan     		PDF BUL510 BUL510 O-220 CC26290 GC57390 TRANSISTOR BO 352

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON Z i RülDeæi[Liero iDei ! STB6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STB6NA 60 V dss R D S o n 600 V < 1 .2 Q Id 6 .5 A • ■ . . ■ . . . TYPICAL RDS(on) = 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    OCR Scan     		PDF STB6NA60 O-262) O-263) O-262 O-263

    BU941ZB

    Abstract: ZPFI
    Text: S G S -T H O M S O N K fflO O K LO T M D O S I B U 94i z / B U 94i z p B U 9 4 1 ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON PRELIMINARY DATA • VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER ■ HIGH OPERATING JUNCTION TEMPERATURE


    OCR Scan     		PDF BU941ZP BU941ZPFI BU941ZB ZPFI

    P6nA60

    Abstract: 6na60 NA60FI
    Text: *57 TYPE STP6N A 60 STP6NA60FI . . . • ■ . ■ 6 60 6 60 SGS-THOMSON iLiOT !Q £I stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss R DS(on Id 600 V 600 V < 1.2 a < 1.2 a 6.5 A 3.9 A TYPICAL R DS(on) = 1 Q ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STP6NA60FI P6nA60 6na60 NA60FI

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON liainmgiigiLgCTiaimniBS BU941ZT/BU941ZTFI BU941ZSM HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES . POWER PACKAGE SPECICALLY


    OCR Scan     		PDF BU941ZT/BU941ZTFI BU941ZSM BU941ZT BU941ZTFI Dab55b3

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON [¡»œ^iera « BU941/BU941P BU941 PFl HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . VERY RUGGED BIPOLARTECHNOLOGY . HIGH OPERATING JUNCTION


    OCR Scan     		PDF BU941/BU941P BU941 BU941 P025C

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O M ¿ 5 S T P 4 N A 60 S T P 4 N A 6 0 FI S O N ¡U È T O « 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STP4NA60 STP4NA60FI dss 600 V 600 V R DS on Id 2.2 2.2 4.3 A 2.7 A < < a a • TYPICAL RDS(on) = 1 85 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STP4NA60 STP4NA60FI STP4NA60/FI ISQWATT220

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    941t

    Abstract: BU941T
    Text: S G S -T H O M S O N b u 94i t / b u 94i t f i B U 941 S M HIGH VO LTAG E IGNITION COIL DRIVER NPN POW ER D ARLING TO N PRELIMINARY DATA • ■ VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE ■ WIDE RANGE OF PACKAGES ■ POWER PACKAGE SPECIFICALLY


    OCR Scan     		PDF -10TM 941TFI BU941SM 941t BU941T

    C5727

    Abstract: No abstract text available
    Text: Zi! SGS-THOMSON R8D lS S l[LliSTl^©iBOi STB3NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STB3NA 80 V dss RDS(on) Id 800 V < 4 .5 Q. 3.1 A • ■ . . ■ . . . TYPICAL RDS(on) = 3.5 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    OCR Scan     		PDF STB3NA80 O-262) O-263) O-26tronics. C5727

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡UÈTO « STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STP6NA60 STP6NA60FI • . ■ . . . . V dss RDS on 600 V 600 V < 1 .2 Id a 6.5 A < 1 .2 0. 3 .9 A TYPICAL RDS(on) = 1 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STP6NA60 STP6NA60FI pSTP6NA60/FI ISQWATT220