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    GC4213 Search Results

    GC4213 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GC4213 Microsemi High Speed PIN Diode Original PDF
    GC4213 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    GC4213-00 Microsemi DIODE PIN ATTENUATOR/SWITCH 100V Original PDF
    GC4213-15 Microsemi DIODE PIN ATTENUATOR/SWITCH 100V Original PDF
    GC4213-30 Microsemi DIODE PIN ATTENUATOR/SWITCH 100V Original PDF
    GC4213-35 Microsemi DIODE PIN ATTENUATOR/SWITCH 100V Original PDF
    GC4213-85 Microsemi DIODE PIN ATTENUATOR/SWITCH 100V Original PDF

    GC4213 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GC4200

    Abstract: GC4275 GC4270 GC4271 GC4272 GC4273 GC4274 RS20
    Text: TOC Control Devices HIGH SPEED PIN DIODES DESCRIPTION APPLICATIONS The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.


    Original     		PDF GC4200 GC4300, GC4400, GC4500 GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 GC4270 GC4271 GC4272 GC4273 GC4274 RS20

    Untitled

    Abstract: No abstract text available
    Text: GC4210 – GC4275 TM CONTROL DEVICES – HIGH SPEED PIN DIODES RoHS Compliant K EY FEAT U RES The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability


    Original     		PDF GC4210 GC4275 GC4200 18Ghz MIL-PRF-195

    GC4200

    Abstract: Types of Radar Antenna GC4210 GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 RS20
    Text: Control Devices HIGH SPEED PIN DIODES APPLICATIONS DESCRIPTION The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by


    Original     		PDF GC4200 MIL-S-19500. GC4300, GC4400, GC4500 Types of Radar Antenna GC4210 GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 RS20

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    GC4210

    Abstract: GC4200 GC4270 GC4271 GC4272 GC4273 GC4275
    Text: GC4210 – GC4275 TM CONTROL DEVICES – HIGH SPEED PIN DIODES RoHS Compliant KEY FEATURES The GC4200 series are high speed cathode base PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability


    Original     		PDF GC4210 GC4275 GC4200 MIL-PRF-19500. GC4210 GC4270 GC4271 GC4272 GC4273 GC4275

    KV38S2

    Abstract: KV3201 gc4700 UM7108 UM6606 GC4430 GC1210 GC4213 gc4213 transistor GC4731
    Text: RF/MICROWAVE discretes & modules Microsemi R TM more than solutions - enabling possibilities Solutions l l l l l l l l Microwave Links Base stations Military/avionics Medical/MRI Radar/phase shifters Space / satellite applications V Sat terminals Land mobile radios


    Original     		PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76