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    GC 109 Price and Stock

    Infineon Technologies AG SIGC109T120R3LEX1SA2

    IGBT 1200V 100A DIE
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    DigiKey SIGC109T120R3LEX1SA2 Bulk
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    Infineon Technologies AG SIGC109T120R3

    - Waffle Pack (Alt: SIGC109T120R3)
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    Avnet Americas SIGC109T120R3 Waffle Pack 4 Weeks 34
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    Rochester Electronics SIGC109T120R3 471 1
    • 1 $11
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    Infineon Technologies AG IGC109T120T8RMX1SA2

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T8RMX1SA)
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    Avnet Americas IGC109T120T8RMX1SA2 Waffle Pack 20 Weeks 2,016
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    Infineon Technologies AG SIGC109T120R3X1SA2

    Trans IGBT Chip N-CH 1.2KV DIE - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC109T120R3X1SA2)
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    Avnet Americas SIGC109T120R3X1SA2 Waffle Pack 34
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    Infineon Technologies AG IGC109T120T8RLX1SA1

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T8RLX1SA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IGC109T120T8RLX1SA1 Waffle Pack 20 Weeks 2,016
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    Find more GC 109 price and stock on Findchips.com

    GC 109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    graphite foil

    Abstract: GC CEMENT GT-11 silicon carbide pumice
    Text: GC-Ceramic Cement Vishay Micro-Measurements Installation of Strain Gages Using GC-Ceramic Cement INTRODUCTION tape must be applied on the curved surface so that the spatula will be drawn along the flat axis. GC-Cement is a single-component cement good for


    Original     		PDF 2000F 1093C] 21-Feb-03 graphite foil GC CEMENT GT-11 silicon carbide pumice

    GT-11

    Abstract: No abstract text available
    Text: GC Cement Vishay Micro-Measurements Strain Gage Cement OTHER ACCESSORIES USED IN A GC CEMENT INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A • M-Prep Neutralizer 5A RoHS COMPLIANT • GSP-1 Gauze Sponges


    Original     		PDF GT-11 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: GC Cement Micro-Measurements Strain Gage Cement OTHER ACCESSORIES USED IN A GC CEME NT INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol  Silicon-Carbide Paper  M-Prep Conditioner A  M-Prep Neutralizer 5A  GSP-1 Gauze Sponges  GT-11 Camel’s Hair Brush


    Original     		PDF GT-11 27-Apr-2011

    M-Prep Neutralizer 5A

    Abstract: GC CEMENT M-prep neutralizer c 1093 GT-11 30MINUTES degreaser mprep conditioner
    Text: GC Cement Vishay Micro-Measurements Strain Gage Cement OTHER ACCESSORIES USED IN A GC CEMENT INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A • M-Prep Neutralizer 5A • GSP-1 Gauze Sponges • GT-11 Camel’s Hair Brush


    Original     		PDF GT-11 oz/30 04-Feb-03 M-Prep Neutralizer 5A GC CEMENT M-prep neutralizer c 1093 30MINUTES degreaser mprep conditioner

    750-6700

    Abstract: db 9p female DB-25S-F179 DB-25P-F179 DEKL-09SUT DB25S 750-6702
    Text: Cinch/GC Waldom GC Waldom/Cinch D-Subminiature Connectors Basic D, D-Sub Miniature Connectors D*KL Series ÒThe Low Cost Interconnect AlternativeÓ This economical series is ideal for commercial applications. Insulator Material: Two-piece nylon. Contact Material: Machine


    Original     		PDF DA-15P DAM-15S DEKL-09PUTI DBM-25P DEKL-09SUT DBM-25S DAKL-15PUTI DCM-37P DAKL-15SUT DCM-37S 750-6700 db 9p female DB-25S-F179 DB-25P-F179 DB25S 750-6702

    gDDR2-800

    Abstract: No abstract text available
    Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.8 May 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4N56163QF-GC 256Mbit gDDR2-800

    CTR50

    Abstract: No abstract text available
    Text: VISHAY CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21


    Original     		PDF CNY75A/ UL94-VO 0303/IEC D-74025 16-Apr-04 CTR50

    Untitled

    Abstract: No abstract text available
    Text: VISHAY CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21


    Original     		PDF CNY75A/ UL94-VO 0303/IEC D-74025 08-Dec-03

    Untitled

    Abstract: No abstract text available
    Text: 8 7 6 5 4 3 2 1 F F 109.86 [4.325] E E 9.00 [0.354] 31.41 [1.237] 41.66 [1.640] D D 146.23 [5.757] EXPLODED HANDLE ASSEMBLY SIDE VIEW 1427TBC,BB,GC C 127.00 [5.000] 13.97 [0.550] 13.00 [0.512] Plastic End Post Aluminum Bar Handle 1427TBC Black Clear 1427TBB


    Original     		PDF 1427TBC 1427TBC 1427TBB 1427TGC

    Untitled

    Abstract: No abstract text available
    Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4N56163QF-GC 256Mbit

    pin diagram of IC 7402

    Abstract: CNY75A data sheet IC 7402 IC 7402 ic 7402 datasheet marking CODE GA CNY75B VDE0884 marking code GC diode CNY75CG
    Text: CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21 (IEC 60068 part 1)


    Original     		PDF CNY75A/ UL94-VO 0303/IEC 08-Apr-05 pin diagram of IC 7402 CNY75A data sheet IC 7402 IC 7402 ic 7402 datasheet marking CODE GA CNY75B VDE0884 marking code GC diode CNY75CG

    burndy Y35 Hypress owner manual

    Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
    Text: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec


    Original     		PDF GC-08 YGIBW28-613-2N YGIBW28-675-2N YGIBW34-338-2N YGIBW34-400-2N YGIBW34-462-2N YGIBW34-550-2N YGIBW34-613-2N YGIBW34-675-2N YGL29C2 burndy Y35 Hypress owner manual burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual

    CNY75A

    Abstract: CNY75B VDE0884 marking code GC diode
    Text: CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21 (IEC 60068 part 1)


    Original     		PDF CNY75A/ UL94-VO 0303/IEC D-74025 26-Oct-04 CNY75A CNY75B VDE0884 marking code GC diode

    Untitled

    Abstract: No abstract text available
    Text: 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 April 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238E-GC 128Mbit 32Bit 144-Ball K4D263238E-GC2A/33/36 K4D263238E-GL36 K4D263238E-GC25

    Untitled

    Abstract: No abstract text available
    Text: 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.0 February 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238E-GC 128Mbit 32Bit 144-Ball K4D263238E-GC25 K4D263238E-GL36 -GC25

    Untitled

    Abstract: No abstract text available
    Text: 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.1 March 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238E-GC 128Mbit 32Bit 144-Ball K4D263238E-GC25 K4D263238E-GL36 -GC25

    Untitled

    Abstract: No abstract text available
    Text: 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 April 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238E-GC 128Mbit 32Bit 144-Ball K4D263238E-GL36 K4D263238E-GC25

    K4D263238E-GC25

    Abstract: K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC36 JEDEC 144ball FBGA
    Text: 128M GDDR SDRAM K4D263238E-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.7 November 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238E-GC 128Mbit 32Bit 144-Ball K4D26323 K4D263238E-GC25 K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC36 JEDEC 144ball FBGA

    MDIO clause 45 specification

    Abstract: SDX4102LR 10Gbe SDX4101 X2 SDX4102LR 10G APD 1310nm 10Gig SDX4102LR-GC-M SK410 10GBASE-LR
    Text: TS-S06D317B October, 2007 10Gb/s X2 Optical Transceiver Module SDX4102LR-GC-M 10GBASE-LR, 1310nm DFB, PIN-PD Features ‹ 10Gb/s Serial Optical Interface ¾ In-house high quality and reliability optical sub-assemblies ¾ 1310nm DFB laser for up to 10km over single


    Original     		PDF TS-S06D317B 10Gb/s SDX4102LR-GC-M 10GBASE-LR, 1310nm IEEE802 10GBASE-LR MDIO clause 45 specification SDX4102LR 10Gbe SDX4101 X2 SDX4102LR 10G APD 1310nm 10Gig SDX4102LR-GC-M SK410

    K4D263238E-GC2A

    Abstract: K4D263238E-GC33 K4D263238E-GC22 K4D263238E-GC25
    Text: 128M GDDR SDRAM K4D263238E-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.8 January 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238E-GC 128Mbit 32Bit 144-Ball K4D263238E-GC22 K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC25

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-GC12 K4J55323QF-Max

    80-B4

    Abstract: TS-S07D087B 800B 807E SDX4101 806-D 8098 PID 80-4B 807D
    Text: TS-S07D087B October, 2007 10Gb/s X2 Optical Transceiver Module SDX4101LM-GC-M 10GBASE-LRM, 1310nm FP-LD, PIN-PD Features ‹ 10Gb/s Serial Optical Interface ¾ In-house high quality and reliability optical sub-assemblies ‹ ‹ ‹ ‹ ¾ 1310nm FP laser ¾


    Original     		PDF TS-S07D087B 10Gb/s SDX4101LM-GC-M 10GBASE-LRM, 1310nm IEEE802 10GBASE-LRM SDX4101LM 80-B4 TS-S07D087B 800B 807E SDX4101 806-D 8098 PID 80-4B 807D

    CNY75A

    Abstract: CNY75B CNY75C OPTOCOUPLER MARKING CODE
    Text: CNY75A/B/C/GA/GB/GC Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES B 6 C 5 E 4 • Isolation materials according to UL94-VO • Pollution degree IEC 60664 2 DIN/VDE 0110/resp. • Climatic classification 55/100/21 (IEC 60068


    Original     		PDF CNY75A/B/C/GA/GB/GC UL94-VO 0110/resp. CNY75A/B/C/GA/GB/GC 18-Jul-08 CNY75A CNY75B CNY75C OPTOCOUPLER MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT GREEN RED REV. PART NUMBER REV. S M L - L X 1 21 OI S GC—TR B E.C.N. NUMBER AND REVISION E.C.N. #10834. 1.2 5.0 2 B E.C.N. #10972. 3 .2 5 .0 3 PARAMETER PEAK WAVELENGTH [0 ,0 79 ] 1,10 [ 0 , 0 4 3 ] 0 ,6 0 0,50 [0 ,0 2 4 ] [0,020] LU


    OCR Scan     		PDF