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    GBS TRANSISTORS Search Results

    GBS TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GBS TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Leaded Fixed Wirewound Resistors

    Abstract: BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed wirewound resistors vishay vse-db0008-0806 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    vse-db0008-0806 Leaded Fixed Wirewound Resistors BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic PDF

    LTTS e3

    Abstract: gbs transistors
    Text: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,


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    3A001 3A002, LTTS e3 gbs transistors PDF

    BY255 equivalent

    Abstract: RH3G BY228 equivalent 1n5062 equivalent BY255 SMD erb06-15 RH3F ERD07-15 bym56e MPSA42 equivalent
    Text: Diotec Products for TV-Applications Version 2005-07-04 Diotec Products for TV-Applications „Clamper/Damper“ Diodes Horizontal Deflection East-West Correction etc > Standard Rectifier Ultra- Fast Rectifier High Voltage Rectifier Input Rectification > Bridge Rectifier


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    ERB06-13 1N4007-1300 BY133 310SMA, 1N4148. 1N4151; BAV18. BAV21; SD101, SD103; BY255 equivalent RH3G BY228 equivalent 1n5062 equivalent BY255 SMD erb06-15 RH3F ERD07-15 bym56e MPSA42 equivalent PDF

    Philips power supply PE 1957

    Abstract: jrc 4562 DARLINGTON ARRAYS PQFP80 ST7285C CQFP80 jrc 4565
    Text: ST7285C R 8-BIT MCU FOR RDS WITH 48K ROM, 3 K RAM, ADC, TWO TIMERS, TWO SPIs, I2C AND SCI INTERFACES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4.5V to 5.5V Supply Operating Range Operates at 8.664MHz Oscillator Frequency for


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    ST7285C 664MHz 16-bit Philips power supply PE 1957 jrc 4562 DARLINGTON ARRAYS PQFP80 ST7285C CQFP80 jrc 4565 PDF

    tfm 7380

    Abstract: jrc 4562 Philips power supply PE 1957 jrc 4565 PQFP80 ST7285C icf a 2025 four DARLINGTON ARRAYS part ph5 CQFP80
    Text: ST7285C R 8-BIT MCU FOR RDS WITH 48K ROM, 3 K RAM, ADC, TWO TIMERS, TWO SPIs, I2C AND SCI INTERFACES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4.5V to 5.5V Supply Operating Range Operates at 8.664MHz Oscillator Frequency for


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    ST7285C 664MHz 16-bit tfm 7380 jrc 4562 Philips power supply PE 1957 jrc 4565 PQFP80 ST7285C icf a 2025 four DARLINGTON ARRAYS part ph5 CQFP80 PDF

    ethernet TVS 2.8 diode

    Abstract: transistors cross reference 1.5 Hearing Aid keyboard matrix laptop lcda05 SLVU2.8SK SMDA15C-4 sms05 PSOT12C USB0402
    Text: TVSarray selector & design guide Summer 2000 protection • Electrostatic discharge • Induced lightning • Inductive load switching advantages • • • • • • Custom solutions Three wafer fabrication facilities Numerous standard product offerings


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS320C6671 Fixed and Floating-Point Digital Signal Processor Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS756A


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    TMS320C6671 SPRS756A TMS320C6671 SPRS756A--July PDF

    SGMII PCIE bridge

    Abstract: No abstract text available
    Text: TMS320C6671 Fixed and Floating-Point Digital Signal Processor Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS756A


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    TMS320C6671 SPRS756A TMS320C6671 SPRS756A--July SGMII PCIE bridge PDF

    60 SMD 5050 Ultra Bright LEDs

    Abstract: MMA 0204 HV - Professional
    Text: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative


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    VMN-MS6495-1011 60 SMD 5050 Ultra Bright LEDs MMA 0204 HV - Professional PDF

    sprugy7

    Abstract: sprugy9 sprabh0 SPRS689A M23 GSM module rake complex Rake search accelerator IEEE1588 3G HSDPA circuits diagram transistor sb 772
    Text: TMS320C6670 Multicore Fixed and Floating-Point System-on-Chip Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS689A


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    TMS320C6670 SPRS689A SPRS689A--April sprugy7 sprugy9 sprabh0 SPRS689A M23 GSM module rake complex Rake search accelerator IEEE1588 3G HSDPA circuits diagram transistor sb 772 PDF

    TMS320TCI6618

    Abstract: 20A4 tms320c66 341F DDR3 jedec JESD79-3C mimo 022d viterbi matrix tv m21 service mode manual pll 022a
    Text: TMS320TCI6618 Communications Infrastructure KeyStone SoC Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS688


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    TMS320TCI6618 SPRS688 SPRS688--February TMS320TCI6618 20A4 tms320c66 341F DDR3 jedec JESD79-3C mimo 022d viterbi matrix tv m21 service mode manual pll 022a PDF

    EMIF SDRAM

    Abstract: No abstract text available
    Text: TMS320TCI6602 Multicore Fixed and Floating-Point Digital Signal Processor Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice.


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    TMS320TCI6602 SPRS782A TMS320TCI6602 SPRS782A--August EMIF SDRAM PDF

    RSV14

    Abstract: No abstract text available
    Text: TMS320TCI6616 Communications Infrastructure KeyStone SoC Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS624A


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    TMS320TCI6616 SPRS624A TMS320TCI6616 SPRS624A--January RSV14 PDF

    Untitled

    Abstract: No abstract text available
    Text: h ~7 > v / 2SD1768S $ /Transistors 2SD 1768S NPN y V 3 > V y ' s v W ^ s tlfr ^ llffl/M e c liu m Power Amp. Epitaxial Planar NPN Silicon Transistor • W K -tf;£@ /D im ension s U n it: mm • 1) VCeo »' ^ (8 0 V ) o 2) U AD C)0 3 ) hFE<7) o 4 ) V c e ( sat


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    2SD1768S 1768S PDF

    BSD10

    Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
    Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724&#39;5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


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    G1724-S BSD10 BSD12 BSD10 T-35-25 7Z90790 -r90X depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S •Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. V ebo = 1 2 V (Min.) 3) ^External dimensions (Units: mm) 2SD2114K 2.9±0.2 11 11-+ 00.1


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    2SD2114K/2SD2144S 2SD2114K 500mA/20A) SC-59 2SD2144S Emit100 100mV PDF

    MM4518

    Abstract: MM452 csb 455 c CSB 455 psri mm4529 mm450 MM555
    Text: Intersil High-Rellability Products_ M M 4 5 0 /4 5 1 /4 5 2 /4 5 5 High Reliability High Voltage Analog Switch GENERAL DESCRIPTION FEATURES The MM450, and MM550 series each contain p channel MOS enhancement mode transistors. These devices are useful in airborne and ground support systems requiring


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    MM450/451/452/455 MM450, MM550 MM450 MM451 MM452 MM455 MM450/451 /452/45S MM4518 MM452 csb 455 c CSB 455 psri mm4529 mm450 MM555 PDF

    2SC3839K

    Abstract: 2SC4084
    Text: h ~7 > v 7. $ / T ransistors 2 C S 3 8 3 9 2SC3839K/2SC4084 K x t f ^ v ^ i / y ^ - ^ N P N v u = ] > h - 7 > v * £ Epitaxial Planar NPN Silicon Transistors 2SC4084 raJS'/SiH aE/R F Amplifier Dimensions U n it: mm 1) f r fT = 2 G H z (Typ.) 2SC 3839K 2SC 4084


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    2SC3839K/2SC4084 2SC3839K 2SC4084 2SC3839K SC-59 0G11DDT IS12I 2SC4084 PDF

    BSD20

    Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
    Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.


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    bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion PDF

    transistor BD 339

    Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
    Text: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.


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    00E374S BSD212 BSD215 BSD213 BSD215 BSD214 bb53031 transistor BD 339 transistor BD 341 BB530 -20/transistor BD 341 PDF

    Untitled

    Abstract: No abstract text available
    Text: h7 > V 2SC4939 $ / I ransistors 2SC 4939 H * y U = l> h -7 Epitaxial Planar NPN Silicon Transistor *y f-> ? ffl/H ig h Speed Switching • fl-J f^ ä ^ /D im e n s io n s (Unit : mm) 1) tf^ 0 .3 n s , (!c = 6 A ) 2) V c e (sat)— 0.3 V (lc /lB = 6 A /0 .3 A )


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    2SC4939 50/iS PDF

    MM-555

    Abstract: MM452 gbs transistors MM5559 mm450 MM555 MM551 MM-552
    Text: D lffilM . M M 450/M M 550, M M 451/M M 551 M M 4 5 2 /M M 5 5 2 , M M 455/M M 555 M O S-F E T Sw itch e s FEATURES GENERAL Large A nalog In p u t— ± 1 0 V Low S u pply Voltage— V B U LK = + 1 0 V V GG = - 2 0 V Typical O N Resistance— V m = - 1 0 V , 1 5 0 fi


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    MM450/MM550, MM451/MM551 MM452/MM552, MM455/MM555 150fl Current-200 MM450, MM550 staM451 MM452, MM-555 MM452 gbs transistors MM5559 mm450 MM555 MM551 MM-552 PDF

    VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN

    Abstract: service-mitteilungen Stassfurt servicemitteilungen rft robotron Servicemitteilungen RFT lautsprecher "service-mitteilungen" Rafena KT 300
    Text: SERVICE-MITTEILUNGEN V E B I N O U S T R I E V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -televisión AUSGABE: 5/73 DATUM: M ai 1973 Mitteilung vom Fachgebiet -Aus- und Weiterbildung der Werktätigenim VEB Industrievertrieb Rundfunk und Fernsehen / Direktion Leipzig


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    PDF

    IRFI360

    Abstract: ALPS 102 IOR 235 transistor 2SA 101 transistor 2SA
    Text: Data Sheet No. PD-9.817 I N T E R N A T I O N A L R E C T I F I E R IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI360 N -C H A N N E L 400 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number


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    IRFI360 Prod47 O-259 MIL-S-19500 00113B3 I-260 IRFI360 ALPS 102 IOR 235 transistor 2SA 101 transistor 2SA PDF