Leaded Fixed Wirewound Resistors
Abstract: BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed wirewound resistors vishay vse-db0008-0806 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0008-0806
Leaded Fixed Wirewound Resistors
BV-1 501
yx 801
relay coil 270r
yx 801 led
Dale RS-1A fusible resistor
draloric ska
Dale Resistor metal oxide cw-2b
FUSE M2 250e
yx 801 ic
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LTTS e3
Abstract: gbs transistors
Text: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,
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3A001
3A002,
LTTS e3
gbs transistors
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BY255 equivalent
Abstract: RH3G BY228 equivalent 1n5062 equivalent BY255 SMD erb06-15 RH3F ERD07-15 bym56e MPSA42 equivalent
Text: Diotec Products for TV-Applications Version 2005-07-04 Diotec Products for TV-Applications „Clamper/Damper“ Diodes Horizontal Deflection East-West Correction etc > Standard Rectifier Ultra- Fast Rectifier High Voltage Rectifier Input Rectification > Bridge Rectifier
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ERB06-13
1N4007-1300
BY133
310SMA,
1N4148.
1N4151;
BAV18.
BAV21;
SD101,
SD103;
BY255 equivalent
RH3G
BY228 equivalent
1n5062 equivalent
BY255 SMD
erb06-15
RH3F
ERD07-15
bym56e
MPSA42 equivalent
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Philips power supply PE 1957
Abstract: jrc 4562 DARLINGTON ARRAYS PQFP80 ST7285C CQFP80 jrc 4565
Text: ST7285C R 8-BIT MCU FOR RDS WITH 48K ROM, 3 K RAM, ADC, TWO TIMERS, TWO SPIs, I2C AND SCI INTERFACES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4.5V to 5.5V Supply Operating Range Operates at 8.664MHz Oscillator Frequency for
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ST7285C
664MHz
16-bit
Philips power supply PE 1957
jrc 4562
DARLINGTON ARRAYS
PQFP80
ST7285C
CQFP80
jrc 4565
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tfm 7380
Abstract: jrc 4562 Philips power supply PE 1957 jrc 4565 PQFP80 ST7285C icf a 2025 four DARLINGTON ARRAYS part ph5 CQFP80
Text: ST7285C R 8-BIT MCU FOR RDS WITH 48K ROM, 3 K RAM, ADC, TWO TIMERS, TWO SPIs, I2C AND SCI INTERFACES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4.5V to 5.5V Supply Operating Range Operates at 8.664MHz Oscillator Frequency for
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ST7285C
664MHz
16-bit
tfm 7380
jrc 4562
Philips power supply PE 1957
jrc 4565
PQFP80
ST7285C
icf a 2025
four DARLINGTON ARRAYS
part ph5
CQFP80
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ethernet TVS 2.8 diode
Abstract: transistors cross reference 1.5 Hearing Aid keyboard matrix laptop lcda05 SLVU2.8SK SMDA15C-4 sms05 PSOT12C USB0402
Text: TVSarray selector & design guide Summer 2000 protection • Electrostatic discharge • Induced lightning • Inductive load switching advantages • • • • • • Custom solutions Three wafer fabrication facilities Numerous standard product offerings
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Untitled
Abstract: No abstract text available
Text: TMS320C6671 Fixed and Floating-Point Digital Signal Processor Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS756A
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TMS320C6671
SPRS756A
TMS320C6671
SPRS756A--July
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SGMII PCIE bridge
Abstract: No abstract text available
Text: TMS320C6671 Fixed and Floating-Point Digital Signal Processor Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS756A
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TMS320C6671
SPRS756A
TMS320C6671
SPRS756A--July
SGMII PCIE bridge
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60 SMD 5050 Ultra Bright LEDs
Abstract: MMA 0204 HV - Professional
Text: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative
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VMN-MS6495-1011
60 SMD 5050 Ultra Bright LEDs
MMA 0204 HV - Professional
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sprugy7
Abstract: sprugy9 sprabh0 SPRS689A M23 GSM module rake complex Rake search accelerator IEEE1588 3G HSDPA circuits diagram transistor sb 772
Text: TMS320C6670 Multicore Fixed and Floating-Point System-on-Chip Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS689A
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TMS320C6670
SPRS689A
SPRS689A--April
sprugy7
sprugy9
sprabh0
SPRS689A
M23 GSM module
rake complex
Rake search accelerator
IEEE1588
3G HSDPA circuits diagram
transistor sb 772
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TMS320TCI6618
Abstract: 20A4 tms320c66 341F DDR3 jedec JESD79-3C mimo 022d viterbi matrix tv m21 service mode manual pll 022a
Text: TMS320TCI6618 Communications Infrastructure KeyStone SoC Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS688
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TMS320TCI6618
SPRS688
SPRS688--February
TMS320TCI6618
20A4
tms320c66
341F
DDR3 jedec JESD79-3C
mimo
022d
viterbi
matrix tv m21 service mode manual
pll 022a
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EMIF SDRAM
Abstract: No abstract text available
Text: TMS320TCI6602 Multicore Fixed and Floating-Point Digital Signal Processor Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice.
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TMS320TCI6602
SPRS782A
TMS320TCI6602
SPRS782A--August
EMIF SDRAM
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RSV14
Abstract: No abstract text available
Text: TMS320TCI6616 Communications Infrastructure KeyStone SoC Data Manual ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. Literature Number: SPRS624A
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TMS320TCI6616
SPRS624A
TMS320TCI6616
SPRS624A--January
RSV14
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Untitled
Abstract: No abstract text available
Text: h ~7 > v / 2SD1768S $ /Transistors 2SD 1768S NPN y V 3 > V y ' s v W ^ s tlfr ^ llffl/M e c liu m Power Amp. Epitaxial Planar NPN Silicon Transistor • W K -tf;£@ /D im ension s U n it: mm • 1) VCeo »' ^ (8 0 V ) o 2) U AD C)0 3 ) hFE<7) o 4 ) V c e ( sat
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2SD1768S
1768S
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BSD10
Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.
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G1724-S
BSD10
BSD12
BSD10
T-35-25
7Z90790
-r90X
depletion MOSFET
n channel depletion MOSFET
BSD12
gbs transistors
depletion mode power mosfet
7z87626
k 3525 MOSFET
convertor 5 V to -5 V
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Untitled
Abstract: No abstract text available
Text: Transistors High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S •Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. V ebo = 1 2 V (Min.) 3) ^External dimensions (Units: mm) 2SD2114K 2.9±0.2 11 11-+ 00.1
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2SD2114K/2SD2144S
2SD2114K
500mA/20A)
SC-59
2SD2144S
Emit100
100mV
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MM4518
Abstract: MM452 csb 455 c CSB 455 psri mm4529 mm450 MM555
Text: Intersil High-Rellability Products_ M M 4 5 0 /4 5 1 /4 5 2 /4 5 5 High Reliability High Voltage Analog Switch GENERAL DESCRIPTION FEATURES The MM450, and MM550 series each contain p channel MOS enhancement mode transistors. These devices are useful in airborne and ground support systems requiring
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MM450/451/452/455
MM450,
MM550
MM450
MM451
MM452
MM455
MM450/451
/452/45S
MM4518
MM452
csb 455 c
CSB 455
psri
mm4529
mm450
MM555
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2SC3839K
Abstract: 2SC4084
Text: h ~7 > v 7. $ / T ransistors 2 C S 3 8 3 9 2SC3839K/2SC4084 K x t f ^ v ^ i / y ^ - ^ N P N v u = ] > h - 7 > v * £ Epitaxial Planar NPN Silicon Transistors 2SC4084 raJS'/SiH aE/R F Amplifier Dimensions U n it: mm 1) f r fT = 2 G H z (Typ.) 2SC 3839K 2SC 4084
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2SC3839K/2SC4084
2SC3839K
2SC4084
2SC3839K
SC-59
0G11DDT
IS12I
2SC4084
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BSD20
Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.
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bb53T31
BSD20
BSD22
OT-143
bb53131
7Z90790
9010J
BSD22
gbs transistors
V1525
depletion MOSFET
n mosfet depletion
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transistor BD 339
Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
Text: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.
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00E374S
BSD212
BSD215
BSD213
BSD215
BSD214
bb53031
transistor BD 339
transistor BD 341
BB530
-20/transistor BD 341
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Untitled
Abstract: No abstract text available
Text: h7 > V 2SC4939 $ / I ransistors 2SC 4939 H * y U = l> h -7 Epitaxial Planar NPN Silicon Transistor *y f-> ? ffl/H ig h Speed Switching • fl-J f^ ä ^ /D im e n s io n s (Unit : mm) 1) tf^ 0 .3 n s , (!c = 6 A ) 2) V c e (sat)— 0.3 V (lc /lB = 6 A /0 .3 A )
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2SC4939
50/iS
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MM-555
Abstract: MM452 gbs transistors MM5559 mm450 MM555 MM551 MM-552
Text: D lffilM . M M 450/M M 550, M M 451/M M 551 M M 4 5 2 /M M 5 5 2 , M M 455/M M 555 M O S-F E T Sw itch e s FEATURES GENERAL Large A nalog In p u t— ± 1 0 V Low S u pply Voltage— V B U LK = + 1 0 V V GG = - 2 0 V Typical O N Resistance— V m = - 1 0 V , 1 5 0 fi
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MM450/MM550,
MM451/MM551
MM452/MM552,
MM455/MM555
150fl
Current-200
MM450,
MM550
staM451
MM452,
MM-555
MM452
gbs transistors
MM5559
mm450
MM555
MM551
MM-552
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VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
Abstract: service-mitteilungen Stassfurt servicemitteilungen rft robotron Servicemitteilungen RFT lautsprecher "service-mitteilungen" Rafena KT 300
Text: SERVICE-MITTEILUNGEN V E B I N O U S T R I E V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -televisión AUSGABE: 5/73 DATUM: M ai 1973 Mitteilung vom Fachgebiet -Aus- und Weiterbildung der Werktätigenim VEB Industrievertrieb Rundfunk und Fernsehen / Direktion Leipzig
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IRFI360
Abstract: ALPS 102 IOR 235 transistor 2SA 101 transistor 2SA
Text: Data Sheet No. PD-9.817 I N T E R N A T I O N A L R E C T I F I E R IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI360 N -C H A N N E L 400 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number
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IRFI360
Prod47
O-259
MIL-S-19500
00113B3
I-260
IRFI360
ALPS 102
IOR 235
transistor 2SA 101
transistor 2SA
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