GSIB-5S
Abstract: E54214 EDF1yM EDF1yS TO-269AA GBPC12-35W MBXM g2sb
Text: Bridge Rectifiers Vishay Semiconductors IF AV (A) 0.5 0.9 1.0 1.5 2.0 3.0 4.0 TYPE V(BR) RANGE (V) PACKAGE DEVICE(1) (7) SOURCE (3) FAMILY MAX VF(5) @ IF (V) (A) MBxM G Mini-bridge MBM 200 - 600 1.0 0.4 MBxS G Mini-bridge (SMD) MBS (TO-269AA) 200 - 600 1.0
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O-269AA)
BxxC800G
BxxC1000G
GSIB25xx
GBPC35xxW
GBPC12-35W
E54214
04-Nov-02
GSIB-5S
E54214
EDF1yM
EDF1yS
TO-269AA
GBPC12-35W
MBXM
g2sb
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GBPC35
Abstract: GBPC3500S GBPC3501S GBPC3502S GBPC35S
Text: GBPC35S SERIES WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Designed for Saving Mounting Space
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GBPC35S
E157705
MIL-STD-202,
GBPC35
GBPC3500S
GBPC3501S
GBPC3502S
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Untitled
Abstract: No abstract text available
Text: GBPC 15, 25, 35 SERIES Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Integrally molded heatsink provide very low thermal resistance for maximum heat dissipation - Typical IR less than 0.2 A - High surge current capability
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E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1312015
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MUR120 SMD
Abstract: diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode
Text: 半導体: 整流素子 • 小信号ダイオード • ツェナーダイオードとサージ吸収素子 • MOSFETs • 高周波トランジスタ • オプトエレクトロニクス • ICs 受動素子: 抵抗器 • 磁性体 • キャパシタ • ひずみゲージ変換器および応力解析システム
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UL94V-0)
ITO-220AB
O-220
MUR120 SMD
diode DGP30
VH500
SMA UF4007
SMD DIODE UF4007
b330la
UGF10FCT
ss2ph10
UGF5
uf5408 SMD diode
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Untitled
Abstract: No abstract text available
Text: GBPC35S SERIES WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Designed for Saving Mounting Space
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GBPC35S
E157705
MIL-STD-202,
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br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
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O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
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Untitled
Abstract: No abstract text available
Text: GBPC35S SERIES WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Designed for Saving Mounting Space
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GBPC35S
E157705
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: GBPC35 SERIES WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features Glass Passivated Die Construction A Low Reverse Leakage Current Low Power Loss, High Efficiency Electrically Isolated Epoxy Case for ~ Maximum Heat Dissipation
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GBPC35
E157705
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Untitled
Abstract: No abstract text available
Text: GBPC35S SERIES WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Designed for Saving Mounting Space
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GBPC35S
E157705
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: GBPC 15, 25, 35 SERIES Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - UL Recognized File # E-326243 - Glass passivated junction - Integrally molded heatsink provide very low thermal resistance for maximum heat dissipation - Typical IR less than 0.2uA
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E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1312015
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Untitled
Abstract: No abstract text available
Text: GBPC 15, 25, 35 SERIES Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Integrally molded heatsink provide very low thermal resistance for maximum heat dissipation - Typical IR less than 0.2 A - High surge current capability
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E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1406006
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Untitled
Abstract: No abstract text available
Text: GBPC35 SERIES 35A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction A Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation
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GBPC35
E157705
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Untitled
Abstract: No abstract text available
Text: GBPC35S SERIES 35A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability Low Thermal Resistance High Surge Current Capability
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GBPC35S
E157705
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Untitled
Abstract: No abstract text available
Text: GBPC 15, 25, 35 SERIES Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Integrally molded heatsink provide very low thermal resistance for maximum heat dissipation - Typical IR less than 0.2 A - High surge current capability
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E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1312015
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KBPM
Abstract: GBPC12-35 EDF1yM EDF1yS GBPC12-35W single inline BxxC1000G
Text: SINGLE-PHASE BRIDGE RECTIFIERS IF AV (A) 0.5 0.9 Package 1.5 2.0 3.0 4.0 6.0 8.0 12.0 15.0 25.0 35.0 MaxVF(5) @ IF Device(1) Family(2) Type (V) (V) (A) MBxS Mini-bridge (SMD) MBS 200 - 600 1.0 0.4 RMBxS Recovery mini-bridge (SMD) MBS 200 - 600 1.25 0.4 BxxC800DM
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BxxC800G
BxxC800DM
BxxC1000G
BxxC1500G
GBPC12-35W
GBPC12-35
GBPC25xxW
GBPC35xx
GBPC15xxW
KBPM
GBPC12-35
EDF1yM
EDF1yS
GBPC12-35W
single inline
BxxC1000G
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Untitled
Abstract: No abstract text available
Text: GBPC35PS SERIES 35A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction A Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation
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GBPC35PS
E157705
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