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    GB50XF120K IGBT 6PACK MODULE Search Results

    GB50XF120K IGBT 6PACK MODULE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    GB50XF120K IGBT 6PACK MODULE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ECONO2-6PACK IGBT module

    Abstract: IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2
    Text: PD - 94567 GB50XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient


    Original     		PDF GB50XF120K ECONO2-6PACK IGBT module IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2

    GB50XF120K

    Abstract: No abstract text available
    Text: Bulletin PD - 94567 rev.A 05/03 GB50XF120K IGBT SIK PACK MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics


    Original     		PDF GB50XF120K E78996 GB50XF120K

    GB50XF120K

    Abstract: No abstract text available
    Text: Bulletin PD - 94567 rev.B 08/03 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics


    Original     		PDF GB50XF120K E78996 GB50XF120K

    95089

    Abstract: GB50XF120K IGBT 6PACK MODULE GB50XF120K
    Text: GB50XF120K Vishay High Power Products IGBT Sixpack Module, 50 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse


    Original     		PDF GB50XF120K 18-Jul-08 95089 GB50XF120K IGBT 6PACK MODULE GB50XF120K

    NV17

    Abstract: 942 rectifier diode
    Text: GB50XF120K Vishay High Power Products IGBT Sixpack Module, 50 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse


    Original     		PDF GB50XF120K 12-Mar-07 NV17 942 rectifier diode

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27283 11/06 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 50A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft


    Original     		PDF I27283 GB50XF120K E78996 12-Mar-07