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Vishay Intertechnologies GB10RF120K Trans IGBT Module N-CH 1.2KV 20A 24-Pin ECONO2 PIM - Bulk (Alt: GB10RF120K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	GB10RF120K	Bulk			6	1 - 10 - 100 - 1000 - 10000 -	Get Quote

GB10RF120K Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GB10RF120K		International Rectifier	IGBT PIM Module		Original	PDF

GB10RF120K Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
brake DIODE Abstract: E78996 rectifier module GB10RF120K law 4933 Text: GB10RF120K Vishay High Power Products IGBT PIM Module, 13 A FEATURES • • • • • • • • • • • ECONO2 PIM Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft	Original	GB10RF120K 18-Jul-08 brake DIODE E78996 rectifier module GB10RF120K law 4933	PDF
k3525 Abstract: brake DIODE GB10RF120K Text: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27278 GB10RF120K E78996 k3525 brake DIODE GB10RF120K	PDF
Untitled Abstract: No abstract text available Text: GB10RF120K Vishay High Power Products IGBT PIM Module, 13 A FEATURES • • • • • • • • • • • ECONO2 PIM Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft	Original	GB10RF120K 12-Mar-07	PDF
Untitled Abstract: No abstract text available Text: Bulletin I27152 06/03 GB10RF120K IGBT PIM MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics	Original	I27152 GB10RF120K E78996	PDF
k3525 Abstract: 8205 datasheet GB10RF120K ice25 ti marking AAB Text: Bulletin I27152 Rev.A 07/03 GB10RF120K IGBT PIM MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics	Original	I27152 GB10RF120K E78996 k3525 8205 datasheet GB10RF120K ice25 ti marking AAB	PDF
Untitled Abstract: No abstract text available Text: Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 13A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft	Original	I27278 GB10RF120K E78996 12-Mar-07	PDF