GB01SHT06-CAU SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GB01SHT06-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT06-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc.
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GB01SHT06-CAU
GB01SHT06-CAU.
05-SEP-2013
GB01SHT06
57E-18
40E-05
12E-11
00E-10
GB01SHT06-CAU SPICE
high-temperature-sic-bare-die
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Untitled
Abstract: No abstract text available
Text: Electrical Datasheet* GB01SHT06-CAU Silicon Carbide Power Schottky Diode Chip Features • 650 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability
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GB01SHT06-CAU
Characteristics01SHT06
GB01SHT06
57E-18
40E-05
12E-11
00E-10
00E-03
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PDF
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Untitled
Abstract: No abstract text available
Text: Die Datasheet GB01SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 2.5 A 7 nC Features • 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge
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GB01SHT06-CAU
Mil-PRF-19500
GB01SHT06
57E-18
40E-05
12E-11
00E-10
00E-03
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PDF
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