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    GATE DRIVE FOR MOSFET IRF9130 Search Results

    GATE DRIVE FOR MOSFET IRF9130 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GATE DRIVE FOR MOSFET IRF9130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9130

    Abstract: gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130
    Text: IRF9130 Data Sheet February 1999 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


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    PDF IRF9130 -100V, -100V IRF9130 gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130

    IRF9130SMD05

    Abstract: IRFNJ9130 SMD05
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


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    PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) -100A/ IRF9130SMD05 IRFNJ9130 SMD05

    SMD05

    Abstract: No abstract text available
    Text: IRF9130SMD05DSG MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3.05 (0.120) 0.127 (0.005) 3 VDSS ID(cont) RDS(on) 10.16 (0.400) 5.72 (.225)


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    PDF IRF9130SMD05DSG -100V SMD05 -100A/s SMD05

    Untitled

    Abstract: No abstract text available
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


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    PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA)

    Untitled

    Abstract: No abstract text available
    Text: IRF9130SMD MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9


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    PDF IRF9130SMD -100V 00A/ms

    50V 8A 1MHz DIODE

    Abstract: IRF9130SMD IRFN9130SMD
    Text: IRF9130SMD MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9


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    PDF IRF9130SMD -100V 00A/ms 50V 8A 1MHz DIODE IRF9130SMD IRFN9130SMD

    IRF9130SMD05

    Abstract: IRF9130SMD05N IRFN9130SMD05
    Text: IRF9130SMD05N IRFN9130SMD05 MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )


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    PDF IRF9130SMD05N IRFN9130SMD05 -100V 00A/ms IRF9130SMD05 IRF9130SMD05N IRFN9130SMD05

    Untitled

    Abstract: No abstract text available
    Text: IRF9130SMD05N IRFN9130SMD05 MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )


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    PDF IRF9130SMD05N IRFN9130SMD05 -100V IRF9130SMD05 IRFN913" IRFN9130SMD05 IRFN9130SMD05-JQR-B O276AA) 860pF

    IRF9130

    Abstract: IRF9130 mosfet
    Text: IRF9130 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)


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    PDF IRF9130 00A/ms 300ms, IRF9130 IRF9130 mosfet

    IRF9130

    Abstract: IRF9130 mosfet 5676 gate drive for mosfet irf9130
    Text: IRF9130 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)


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    PDF IRF9130 300ms, IRF9130 IRF9130 mosfet 5676 gate drive for mosfet irf9130

    irf9130

    Abstract: No abstract text available
    Text: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International


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    PDF 90549C IRF9130 JANTX2N6804 JANTXV2N6804 O-204AA/AE) MIL-PRF-19500/562] -100V irf9130

    IRF9130

    Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
    Text: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International


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    PDF 90549C IRF9130 JANTX2N6804 JANTXV2N6804 O-204AA/AE) MIL-PRF-19500/562] -100V parellelin252-7105 IRF9130 IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804

    IRFN9130

    Abstract: TO220SM
    Text: IRFN9130 MECHANICAL DATA Dimensions in mm inches 11.5 2.0 3.5 1 3.0 VDSS ID(cont) RDS(on) 3 -100V -9.3A 0.31W 9.0 1.5 15.8 4.6 3.5 0.25 P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS FEATURES 2 • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS 8.5


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    PDF IRFN9130 -100V 220SM IRF9130SM 00A/ms IRFN9130 TO220SM

    smd diode 44a

    Abstract: IRF9130SMD IRFN9130
    Text: IRFN9130 MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9


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    PDF IRFN9130 -100V O-276AB) -100A/ smd diode 44a IRF9130SMD IRFN9130

    IRF150 MOSFET AMP circuit

    Abstract: forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 irf150
    Text: Paralleling Of Power MOSFETs For Higher Power Output James B. Forsythe, Member IEEE International Rectifier, E1 Segundo, California Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given


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    PDF IRF150 IRF150 MOSFET AMP circuit forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942

    Untitled

    Abstract: No abstract text available
    Text: IRFN9130SMD MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9


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    PDF IRFN9130SMD -100V 00A/ms

    2N2369 equivalent

    Abstract: No abstract text available
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


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    PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) O276AA) 860pF IRF9130SMD05DGS 2N2369 equivalent

    diode bs 9300

    Abstract: lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


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    PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) IRFNJ9130 IRF9130SMD05DSG" IRF9130SMD05DSG O276AA) diode bs 9300 lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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    IRF9130

    Abstract: IRF9131 irf930 IRF9130 mosfet gate drive for mosfet irf9130 P-channel HEXFET Power MOSFET IRF9132
    Text: H E 0 I MâS 54 52 000^214 5 | Data Sheet No. PD-9.318E INTERNATIONAL RECTIFIER « in t e r n a t io n a l r e c t i f i e r I«R HEXFET TRANSISTORS IRF91 3 0 IRF9131 IRFS1 3 2 Channel IRFS1 3 3 -100 Volt, 0.3 Ohm HEXFET The HEXFET technology is the key to International Rectifier’s


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    PDF IRF91 IRF9131 G-196 IRF9130 IRF9131 irf930 IRF9130 mosfet gate drive for mosfet irf9130 P-channel HEXFET Power MOSFET IRF9132

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    Untitled

    Abstract: No abstract text available
    Text: nil = V r= SEM E INI IRFN9130 LAB MECHANICAL DATA P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 11.5 2.0 3.5 0.25 3.5 3.0 V DSS -100V -9.3A 0.31ft ^D(cont) ^D S (on) FEATURES • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS


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    PDF IRFN9130 -100V O-220SM IRF9130SM

    IRF series

    Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
    Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs


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    PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


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    PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40