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    GAP05SLT80-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GAP05SLT80-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GAP05SLT80-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 15-SEP-2014 $ * *


    Original     		PDF GAP05SLT80-CAL GAP05SLT80-CAL. 15-SEP-2014 GAP05SILITY GAP05SLT80-CAL GAP05SLT80 TEMP-24) GAP05SLT80-220 GAP05SLT80-CAL SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GAP05SLT80-CAL Silicon Carbide Power Schottky Diode Chip Features •     8000 V Silicon Carbide Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds


    Original     		PDF GAP05SLT80-CAL GAP05SLT80-CAL GAP05SLT80 TEMP-24) 067E-15 39E-6 838E-12

    GAP05SLT80-CAL

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GAP05SLT80-CAL Silicon Carbide Power Schottky Diode VRRM IF QC = = = 8000 V 50 mA 8 nC Features •     8000 V Silicon Carbide Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds


    Original     		PDF GAP05SLT80-CAL GAP05SLT80-CAL GAP05SLT80 TEMP-24) GAP05SLT80-220 067E-15 39E-6 838E-12 high-temperature-sic-bare-die