BL-L512PD
Abstract: GaN photo diode PHOTO GAP DETECTOR BL-L512
Text: SILICON PHOTO DIODES BL-L512PD Features: 5.1*3.0*7.4mm SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity. Small junction capacitance. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR
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BL-L512PD
880nm
940nm
430nm/Blue
470nm/Blue
505nm/Ultra
525nm/Ultra
BL-L512PD
GaN photo diode
PHOTO GAP DETECTOR
BL-L512
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PHOTO GAP DETECTOR
Abstract: BL-L4802PD infrared 5mm 940nm GaAs blue light PHOTO detector
Text: SILICON PHOTO DIODES BL-L4802PD Features: 5*3.8*6.5mm SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity. Small junction capacitance. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter.
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BL-L4802PD
880nm
940nm
430nm/Blue
470nm/Blue
505nm/Ultra
525nm/Ultra
PHOTO GAP DETECTOR
BL-L4802PD
infrared 5mm 940nm GaAs
blue light PHOTO detector
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PHOTO DIODES
Abstract: BL-L512PD
Text: SILICON PHOTO DIODES BL-L512PD Features: Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.The epoxy package itself is an IR filter, spectrally matched
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BL-L512PD
PHOTO DIODES
BL-L512PD
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PHOTO DIODES
Abstract: BL-L4802PD
Text: SILICON PHOTO DIODES BL-L4802PD Features: Ø 5*3.8*6.5mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
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BL-L4802PD
25g/pcs
PHOTO DIODES
BL-L4802PD
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BL-L3522PD
Abstract: PHOTO GAP DETECTOR L352 blue light PHOTO detector
Text: SILICON PHOTO DIODES BL-L3522PD Features: Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
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BL-L3522PD
30KHz
300Hz
100KHz
10KHz
BL-L3522PD
PHOTO GAP DETECTOR
L352
blue light PHOTO detector
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PHOTO DIODES
Abstract: BL-L3522PD
Text: SILICON PHOTO DIODES BL-L3522PD Features: Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
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BL-L3522PD
23g/pcs
PHOTO DIODES
BL-L3522PD
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BL-L512PD
Abstract: Gan photo diode
Text: SILICON PHOTO DIODES BL-L512PD Features: Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
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BL-L512PD
30KHz
300Hz
100KHz
10KHz
BL-L512PD
Gan photo diode
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BL-L4802PD
Abstract: PHOTO GAP DETECTOR
Text: SILICON PHOTO DIODES BL-L4802PD Features: Ø 5*3.8*6.5mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
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BL-L4802PD
30KHz
300Hz
100KHz
10KHz
BL-L4802PD
PHOTO GAP DETECTOR
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Untitled
Abstract: No abstract text available
Text: CS405035M5M 405nm Compact Laser Diode Modules Key features Visible light λ = 405nm Output powers = 35mW CW Package type=5.6 mm Φ High reliability Applications Blu- ray Disc/HD DVD drive Other new application Laser Diode Solutions CS405035M5M is a MOCVD grown 405nm band GaN laser diode. It's
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CS405035M5M
405nm
405nm
CS405035M5M
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Untitled
Abstract: No abstract text available
Text: CS405065M5X 405nm Compact Laser Diode Modules Key features Visible light λ = 405nm Output powers = 65mW CW Package type=5.6 mm Φ High reliability Applications Blu- ray Disc/HD DVD drive Other new application Laser Diode Solutions CS405065M5X is a MOCVD grown 405nm band GaN laser diode. It's
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CS405065M5X
405nm
405nm
CS405065M5X
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Gan photo diode
Abstract: SFT-0100 at-1012 transistor PRBS31 STM-64 bjt differential amplifier
Text: SFT-0100 SFT-0100Transimpedance Amplifier TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-0100 is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 10 Gb/s and 12.5 Gb/s SONET/SDH applications. The SFT-0100 uses high FT indium gallium phosphide device technology that
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SFT-0100
SFT-0100Transimpedance
SFT-0100
EDS-102714
Gan photo diode
at-1012 transistor
PRBS31
STM-64
bjt differential amplifier
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MOTOROLA OPTOELECTRONIC led
Abstract: gold scanner detector PSD elcos multi color 7-segment led smt a1 transistor PerkinElmer Optoelectronics philips LED GaAsP Sensors PSD Elcos AG MOTOROLA OPTOELECTRONIC
Text: PerkinElmer Elcos Innovative LED Solutions chip on board custom design optoelectronics ELCOS was founded in 1976 as a specialist for optoelectronic components. You as our customer can rely on more than 25 years of experience in chip on board COB technology, chip
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CAT0406P
MOTOROLA OPTOELECTRONIC led
gold scanner detector
PSD elcos
multi color 7-segment led
smt a1 transistor
PerkinElmer Optoelectronics
philips LED GaAsP
Sensors PSD
Elcos AG
MOTOROLA OPTOELECTRONIC
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Russian diode Transistor
Abstract: LASER DIODE DRIVER ldd-9 Spectra-Physics 476 russian diode High Vacuum Distillation furnace ATC-2430 Spectra-Physics 20 watt laser module breast pump russian diodes Rittal
Text: ATC-SD Home Page High power laser diode manufacturer Most high-tech companies keep their know-how in secret and sell only ready products. We have the opposite strategy. Our main product is know-how. There is equipment and Equipment. We offer you Equipment which is fully adapted for real A3B5
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SFT-9100
Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
Text: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9200B
50GHz
SFT-9200B
43Gb/s
40GbE,
100GbE
SFT-9100
InP transistor HEMT
sft 43
Sft9100
9200B
InP HEMT transistor at 50ghz
inp hemt low noise amplifier
InP HBT transistor
mesfet low noise
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photodiod modules
Abstract: PIN Photodiod CATV Receiver OS10040320PW
Text: OS10040320PW OS10040320 PW 40MHz to 1000MHz GaAs Optical Receiver 40MHz to 1000MHz GaAs OPTICAL RECEIVER Package: SOT-115J Product Description Features The OS10040320PW is a hybrid high dynamic range optical receiver amplifier module. Two of the module pins are for connection to 24V DC ,
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OS10040320PW
OS10040320
40MHz
1000MHz
1000MHz
OT-115J
OS10040320PW
1290nm
1600nm,
photodiod modules
PIN Photodiod CATV Receiver
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OS10040320
Abstract: OS10040320PW Rfmd hybrid optical receiver module Gan photo diode
Text: OS10040320PW OS10040320 PW 40MHz to 1000MHz GaAs Optical Receiver 40MHz to 1000MHz GaAs OPTICAL RECEIVER Package: SOT-115J Product Description Features The OS10040320PW is a hybrid high dynamic range optical receiver amplifier module. Two of the module pins are for connection to 24V DC ,
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OS10040320PW
OS10040320
40MHz
1000MHz
1000MHz
OT-115J
OS10040320PW
1290nm
1600nm,
OS10040320
Rfmd hybrid optical receiver module
Gan photo diode
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Untitled
Abstract: No abstract text available
Text: OS10040320PW OS10040320 PW 40MHz to 1000MHz GaAs Optical Receiver 40MHz to 1000MHz GaAs OPTICAL RECEIVER Package: SOT-115J Product Description Features The OS10040320PW is a hybrid high dynamic range optical receiver amplifier module. Two of the module pins are for connection to 24V DC ,
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OS10040320PW
OS10040320
40MHz
1000MHz
1000MHz
OT-115J
OS10040320PW
1290nm
1600nm,
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60GHz transistor
Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
Text: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9400B
60GHz
SFT-9400B
43Gb/s
40GbE,
100GbE
50GHz
60GHz transistor
InP transistor HEMT
SFT9400B
OC-768
98T2
InP HBT transistor low noise
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visible communication LED
Abstract: 1900nm vics Beacon Epitex L940 PT008-SM PD032P00 led 430nm highpower Opto-Sensor IR Beacon PD006-33
Text: -Opto-Devices & Custom LEDs- EPITEX INCORPORATION Editted on 12/07/2001 Introduction Our company mottoes are Challenge, Innovation and Advance We think that Epitex is a first manufacturer of Highpower and Highspeed IRLEDs in the world to cover a wide range
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880nm
visible communication LED
1900nm
vics Beacon
Epitex L940
PT008-SM
PD032P00
led 430nm highpower
Opto-Sensor
IR Beacon
PD006-33
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1348 c23
Abstract: No abstract text available
Text: RFW3744 Preliminary QUAD-CHANNEL INTEGRATED RECEIVER TIA+LA+LOS (4x3.125Gbps) Typical Applications • Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers • CWDM/WWDM 4-Channel Parallel Links • SONET VSR & System Interconnect • All Fiber Optic Transceiver Applications up
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10Gigabit
RFW3744
858mW
125Gbps/channel.
250-micron
48mmx46mm
RFW3744
RO4003
1348 c23
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Rogers RO4003
Abstract: RF374
Text: RF3744 Preliminary 48$'&+$11 / ,17(*5$7(' 5(&(,9(5 7,$/$/26 [*ESV 7\SLFDO $SSOLFDWLRQV • Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers • CWDM/WWDM 4-Channel Parallel Links • SONET VSR & System Interconnect • All Fiber Optic Transceiver Applications up
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RF3744
10Gigabit
125Gbps
RF3744
858mW
RO4003
Rogers RO4003
RF374
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Untitled
Abstract: No abstract text available
Text: RF3744 Preliminary 13 QUAD-CHANNEL INTEGRATED RECEIVER TIA+LA+LOS (4x3.125Gbps) Typical Applications • Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers • CWDM/WWDM 4-Channel Parallel Links • SONET VSR & System Interconnect • All Fiber Optic Transceiver Applications up
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RF3744
125Gbps)
10Gigabit
125Gbps
RF3744
858mW
48mmx46mm
RO4003
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AVERAGE QUASI PEAK AND PEAK DETECTOR
Abstract: nixie tube circuit
Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction
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TLMB100
Abstract: light-sensitive resistor GaAs silicon carbide LED telefunken diodes SI 61 L
Text: T e m ig TELEFUNKEN Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as
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