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    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd
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    Digi International Inc DG-ANT-50DP-AG

    Antennas Ant RP-SMA 2.4/5GHz Dipole w/5dBi gain
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    Mouser Electronics DG-ANT-50DP-AG 20
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    Infineon Technologies AG EVALHBPARALLELGANTOBO1

    Power Management IC Development Tools EVAL_HB_PARALLELGAN
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    Mouser Electronics EVALHBPARALLELGANTOBO1
    • 1 $142.31
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    GAN PA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L-934MBC

    Abstract: L-934MBD L-934MBT LED Kingbright L934MBD kingBright t-1 LED L934MBC L- 934MBC L934MBT
    Text: T-1 3mm BLUE LED Kingbright L-934MBD GaN L-934MBT GaN L-934MBC GaN Package Dimensions Features lLOW POWER CONSUMPTION. lSOLID STATE BLUE LIGHT SOURCE. lSUITABLE FOR FULL COLOR LED DSIPLAYS AND INDICATORS DIAGNOSTIC/ANALYTICAL EQUIPMENT. Description The blue source color devices are made with GaN on SiC


    Original     		PDF L-934MBD L-934MBT L-934MBC 2-L934MB-2 L-934MBC 2-L934MB-3 LED Kingbright L934MBD kingBright t-1 LED L934MBC L- 934MBC L934MBT

    5BWC

    Abstract: No abstract text available
    Text: Chip Assy Part No. Material SLMXXX5BWC SLMXXX5BWD SLMXXX5BWT SLMXXX5PGC SLMXXX5PGD SLMXXX5PGT SLMXXX5GC SLMXXX5GD SLMXXX5GT SLMXXX5YC SLMXXX5YD SLMXXX5YT SLMXXX5HC SLMXXX5HD SLMXXX5HT SLMXXX5RC SLMXXX5RD SLMXXX5RT GaN/SiC GaN/SiC GaN/SiC GaP/GaP GaP/GaP GaP/GaP


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Chip Assy Part No. Material SLMXXX5BWC SLMXXX5BWD SLMXXX5BWT SLMXXX5PGC SLMXXX5PGD SLMXXX5PGT SLMXXX5GC SLMXXX5GD SLMXXX5GT SLMXXX5YC SLMXXX5YD SLMXXX5YT SLMXXX5HC SLMXXX5HD SLMXXX5HT SLMXXX5RC SLMXXX5RD SLMXXX5RT GaN/SiC GaN/SiC GaN/SiC GaP/GaP GaP/GaP GaP/GaP


    Original     		PDF

    NPTB0004

    Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
    Text: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-010 AN-010: NPT25100 NPTB0004 GaN amplifier 100W GaN Bias 25 watt vmos fet NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015

    L-53MBC

    Abstract: blue led 5mm L-53MBD blue led L-53MBT kingBright t-1 LED 5mm Blue Led 2-L53MB-3 Kingbright LED 5mm blue
    Text: T-1 3/4 5mm BLUE LED Kingbright L-53MBD GaN L-53MBT GaN L-53MBC GaN Package Dimensions Features lLOW POWER CONSUMPTION. STATE BLUE LIGHT SOURCE. lSUITABLE FOR FULL COLOR LED DSIPLAYS AND INDICATORS DIAGNOSTIC/ANALYTICAL EQUIPMENT. lSOLID Description The Blue source color devices are made with GaN on SiC


    Original     		PDF L-53MBD L-53MBT L-53MBC 2-L53MB-2 L-53MBC 2-L53MB-3 blue led 5mm blue led kingBright t-1 LED 5mm Blue Led 2-L53MB-3 Kingbright LED 5mm blue

    blue LED 5mm low

    Abstract: L-53MBD 5mm Blue Led blue led blue led 5mm blue led 5mm 20ma LED blue 20mA L-53MBC L-53MBT L53MBD
    Text: T-1 3/4 5mm BLUE LED Kingbright L-53MBD GaN L-53MBT GaN L-53MBC GaN Package Features Dimensions LOW POWER CONSUMPTION. SOLID STATE BLUE LIGHT SOURCE. SUITABLE FOR FULL COLOR LED DSIPLAYS AND INDICATORS DIAGNOSTIC/ANALYTICAL EQUIPMENT. Description The Blue source color devices are made with GaN on SiC


    Original     		PDF L-53MBD L-53MBT L-53MBC L-53MBC blue LED 5mm low 5mm Blue Led blue led blue led 5mm blue led 5mm 20ma LED blue 20mA L53MBD

    28F0181-1SR-10

    Abstract: CAPACITOR 150 RED
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED

    LF81

    Abstract: No abstract text available
    Text: Kingbright FULL COLOR LED LAMPS LF59 LF819 Part No. Emitting Color + Material Wavelength nm Iv (mcd) @20mA Lens Type Viewing Angle Min. Typ. 90 150 12 30 50 100 GaAsP/GaP 625 GaN 430 GaP 565 GaN 430 12 30 GaAsP/GaP 625 20 70 GaN 430 3 8 GaP 565 10 50 GaN


    Original     		PDF LF819 LF59EMBGMBC LF59EMBGMBW LF819EMBGMBC LF81

    GaN ADS

    Abstract: GaN amplifier 120W transistor hemt RF393x
    Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,


    Original     		PDF RF393x 900MHz 220mA) 220mA, RF3934 440mA) 900MHz) GaN ADS GaN amplifier 120W transistor hemt

    GaN amplifier

    Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
    Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-013 AN-013: NPTB00004 12-Watt NPT25100 MRF6S9125 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation

    X-band Gan Hemt

    Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
    Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2


    Original     		PDF AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535

    Untitled

    Abstract: No abstract text available
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928 RF3928280W DS120508

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RFHA1025 RFHA1025 96GHz 215GHz DS120613

    ATC100B620

    Abstract: L22 amplifier Gan hemt transistor RFMD
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RFHA1025 RFHA1025 96GHz 215GHz DS120928

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RFHA1025 96GHz 215GHz DS120613

    RF3928B

    Abstract: power transistor gan s-band RF392
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928B RF3928B DS111208 power transistor gan s-band RF392

    GaN amplifier temperature compensation

    Abstract: GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt NPT25100 AN009
    Text: APPLICATION NOTE AN-009 GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 APPLICATION NOTE AN-009 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table of Contents


    Original     		PDF AN-009 AN-009: NPT25100 GaN amplifier temperature compensation GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt AN009

    Untitled

    Abstract: No abstract text available
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928B DS120503

    Untitled

    Abstract: No abstract text available
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928B RF3928B DS120503

    GaN hemt

    Abstract: power transistor gan s-band air surveillance system diagram using radar
    Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar

    atc100a150

    Abstract: power transistor gan s-band
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RF3928B RF3928B DS120503 atc100a150 power transistor gan s-band

    Untitled

    Abstract: No abstract text available
    Text: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology


    Original     		PDF RFHA3944 RF360-2 800MHz 2500MHz -40dBc DS120418

    Untitled

    Abstract: No abstract text available
    Text: RFHA3942 35W GaN WIDEBAND POWER AMPLIFIER RFHA3942 Proposed 35W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology


    Original     		PDF RFHA3942 RF360-2 800MHz 2500MHz -40dBc DS120418