Untitled
Abstract: No abstract text available
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering
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FOD817
FOD817:
FOD817A:
FOD817B:
FOD817C:
FOD817D:
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phototransistor 3 pin
Abstract: FOD817 t-1 ir phototransistor 3 pin phototransistor 4 pin phototransistor dual Phototransistor OPTOCOUPLERs MARKING CODE FOD817A FOD817B FOD817C
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering
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FOD817
FOD817:
FOD817A:
FOD817B:
FOD817C:
FOD817D:
phototransistor 3 pin
t-1 ir phototransistor
3 pin phototransistor
4 pin phototransistor
dual Phototransistor
OPTOCOUPLERs MARKING CODE
FOD817A
FOD817B
FOD817C
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cqy 17
Abstract: INFRARED DIODES CQY 40 IR array
Text: These components are RoHS compliant Pb SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow
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SSA-005-2
SSA-005-2
950nm,
cqy 17
INFRARED DIODES
CQY 40
IR array
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Untitled
Abstract: No abstract text available
Text: SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1”
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SSA-005-2
SSA-005-2
SSA005-2A
950nm,
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Opto Coupler 4N36
Abstract: MOC207R1-M MOTOROLA Cross Reference Search H11D1M E90700 motorola 4N35 opto - coupler MOC206 "cross reference" Surface wave coupler 4N33 "cross reference" MOC205-M
Text: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.
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MOC205,
E90700,
MOC205-M
Opto Coupler 4N36
MOC207R1-M
MOTOROLA Cross Reference Search
H11D1M
E90700
motorola 4N35 opto - coupler
MOC206 "cross reference"
Surface wave coupler
4N33 "cross reference"
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Untitled
Abstract: No abstract text available
Text: IR Emitter and Detector Product Data Sheet LTE-209 Spec No.：DS-50-92-0001 Effective Date: 02/09/2001 Revision: C LITE-ON ENG 03/14/2014 PRELIMINARY LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
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LTE-209
DS-50-92-0001
LTR-4206
LTE-209
BNS-OD-C131/A4
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Untitled
Abstract: No abstract text available
Text: IR Emitter and Detector Product Data Sheet LTE-209C Spec No.: DS-50-92-0002 Effective Date: 02/09/2001 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
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LTE-209C
DS-50-92-0002
BNS-OD-FC001/A4
LTR-209
LTE-209
LTE-209C
BNS-OD-C131/A4
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Untitled
Abstract: No abstract text available
Text: IR Emitter and Detector Product Data Sheet LTE-2872U Spec No.: DS-50-93-0018 Effective Date: 09/18/2010 Revision: B LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
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LTE-2872U
DS-50-93-0018
BNS-OD-FC001/A4
LTR-3208
LTE-2872U
BNS-OD-C131/A4
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216 OPTO SO8
Abstract: MOC216R1 motorola 4n35 Dual opto coupler IC SOIC 8 footprint MOC3052M MOC215/buy/GDZ4.3BD5 H11AA4M H11G2M MOC3081M
Text: Transistor Output Low Input Current These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density
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MOC215,
andC215-M
MOC223-M
MOC3011-M
MOC3021-M
MOC3031-M
MOC3041-M
MOC3051-M
MOC3062-M
MOC3081-M
216 OPTO SO8
MOC216R1
motorola 4n35
Dual opto coupler IC
SOIC 8 footprint
MOC3052M
MOC215/buy/GDZ4.3BD5
H11AA4M
H11G2M
MOC3081M
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H11D1M
Abstract: Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M
Text: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.
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MOC211,
MOCC215-M
MOC223-M
MOC3011-M
MOC3021-M
MOC3031-M
MOC3041-M
MOC3051-M
MOC3062-M
MOC3081-M
H11D1M
Dual opto coupler IC
MOC3023-M
4N26-M
MOC306
MOTOROLA Cross Reference Search
H11AA4M
4N32M
MOC8050M
MOC223M
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NTE3086
Abstract: No abstract text available
Text: NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability.
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NTE3086
NTE3086
100mW
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H11AV1
Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
H11AV2SR2V-M
H11AV2SV-M
P01101866
CR/0117
E90700,
H11AV1A
H11AV2A
H11AV1M
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4pin opto isolator 610-2
Abstract: 307-064 4pin opto isolator 308-613 4-pin optoisolator 307064 SFH610-2 BZX61 ISO74 dual channel opto triac
Text: Issued November 1994 F18512 Transistor/Darlington opto-isolators A comprehensive range of 'general purpose' opto-isolators which consist of a light emitting diode coupled to a silicon phototransistor. The range comprises the following, and offers variations on Isolation Voltage, Current transfer ratio,
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F18512
SFH610-2
CNY17-1
CNY17-3
H11A1
MCT2201
20kHz.
IN4004
240Vac
4pin opto isolator 610-2
307-064
4pin opto isolator
308-613
4-pin optoisolator
307064
BZX61
ISO74
dual channel opto triac
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H11AV2
Abstract: H11AV1A H11AV1M
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
P01101866
CR/0117
E90700,
H11AV1A
H11AV1M
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SIECOR Fiber Optic cable
Abstract: Siecor M07A C86009E S40S C86008E GALLIUM ARSENIDE ir detector DDGDD17
Text: E 6 & G/CANADA/O PTOELEK 10E » • 3D 30tL0 0DÛ0D17 4 »CANA •/ - if./ - O ' T ' C86008E, C86009E Infrared Emitters Developmental Types 820 nm High-Speed Gallium Aluminum Arsenide IR Emitters With Integral Fiber Optic Ouput Cable and Connector ■ For Continuous DC or Pulsed Operation
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DDGDD17
C86008E.
G86009E
C86008E
C86009E
C86008E,
C86009E
SIECOR Fiber Optic cable
Siecor
M07A
S40S
GALLIUM ARSENIDE ir detector
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Untitled
Abstract: No abstract text available
Text: i 6 /CANADA/0PT0ELEK 10E 1 • 30 3 D b l 0 DD00017 4 « C A N A ‘ C86008E, G86009E Infrared Emitters Developmental Types 820 nm High-Speed Gallium Aluminum Arsenide IR Emitters With Integral Fiber Optic Ouput Cable and Connector For Continuous DC or Pulsed Operation
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OCR Scan
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PDF
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DD00017
C86008E,
G86009E
C86008E
C86009E
C86009E
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SIR34ST3
Abstract: No abstract text available
Text: MDE D ROHM CO LTD • 7020^*1 GOGbflb? 4 ■ RHM Page lu n ir n Specification Products Type [ ol ^ SIR-34ST3 SIR-34ST3 GaAs INFRARED EMITTING DIODE The SIR-34ST3 is a gallium arsenide infrared diode with transparent plastic encapsulation. The device is designed to accomodate needs of optical remote control
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OCR Scan
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SIR-34ST3
SIR-34ST3
950nm
T-41-11
SIR34ST3
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP594G TENTATIVE TOSHIBA PHOTOCOUPLER T I P R Q PHOTO RELAY J f i MODEMS PBXes TFI FrO M M lIN ir A T I DNS The TOSHIBA TLP594G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a DIP DIP6 , which is suitable for equipment for high tech
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OCR Scan
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PDF
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TLP594G
TLP594G
UL1577,
E67349
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H11LI
Abstract: 730c-04 11L2
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & <D ® BS SEM KO NEM KO BAST TO <a ® VOE UL CSA sen DEM KO H11L1* [IF on = 1.6 m A Max] H11L2 6-Pin DIP Optoisolators Logic Output (IF(on) = 10 m A Max] *Motorola Preferred Device ST Y L E 5 P LA ST IC The H11L1 and H 1 1L2 have a gallium arsenide IR E D optically coupled to a high-speed
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H11L1*
H11L1
H11LI
730c-04
11L2
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Untitled
Abstract: No abstract text available
Text: 1 40E D B 34T^73fi 0001116 2 B S E N I FASCO INDS/ SENISYS V_^ t“~M-~l LED Chips To complement its broad range of both custom and stock detectors Clairex offers a complete line of LED discrete chips. Clairex offers Gallium Phosphide GaP chips which emit red visible light and Gallium
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OCR Scan
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PDF
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CLCLL2041
CLCLL208
CLCLL2011
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CLCLL2011
Abstract: LED 700 nm lr 014 CLCLL2041 CLCLL208 IR LED 940 nm
Text: MOE » B 34^730 FASCO 0001116 2 l^SENI INDS/ S E N I S Y S l-M-"] LED Chips To complement its broad range of both custom and stock detectors Clairex offers a complete line of LED discrete chips. C lairex offers Gallium Phosphide GaP chips which em it red visible light and Gallium
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OCR Scan
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PDF
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CLCLL2041
CLCLL208
CLCLL2011
LED 700 nm
lr 014
IR LED 940 nm
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L 3005 TRANSISTOR
Abstract: transistor 3005 2 transistor 3005 SI 3102 v NPN 200 VOLTS POWER TRANSISTOR photon coupled interrupter nte 3100 npn PHOTO GAP DETECTOR
Text: typical NTE Type Number Description Typical Peak Emission Wavelength nm Typical Response Time (ns) Diagram Number Total External Radiated Power (mW) Po VF Vr If Pd Xp ton, toff 550|iW 1.5 3 50 75 900 10 Maximum Forward Voltage (Volts) Reverse Voltage (Volts)
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TRANSISTOR 2SC 950
Abstract: phototransistor npn NPN Transistor 5V DARLINGTON transistor 2sc nte 3122 SI 3105 A
Text: INFRARED EMITTING DIODES NTE Type Number Description Diagram Number typical Total External Radiated Power mW Maximum Forward Voltage (Volta) VF 1.28 Vr 141 Po 15 Typical Peak Emission Wove length DC Forward Current (mA) Power Dlaalpatlon (mW) 6 If 100 Pd
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OCR Scan
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650nW
TRANSISTOR 2SC 950
phototransistor npn
NPN Transistor 5V DARLINGTON
transistor 2sc
nte 3122
SI 3105 A
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photon coupled interrupter 3101
Abstract: photon coupled interrupter photon coupled interrupter nte 3100 npn phototransistor npn photo interrupter module darlington IR phototransistor Si pin photodiode module npn 940 T018 T046
Text: INFRARED EMITTING DIODES NTE type Number 3017 3027 3028 3029A 3099 30001 Typical Total External Radiated Power mW Diagram Number Description PN Gallium Arsenide Bi-Directional Bi-Directional Maximum Forward Voltage (Volts) Reverse Voltage (Volts) DC Forward
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OCR Scan
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PDF
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650nW
150nW
b4315S^
0003hl3
photon coupled interrupter 3101
photon coupled interrupter
photon coupled interrupter nte 3100 npn
phototransistor npn
photo interrupter module
darlington IR phototransistor
Si pin photodiode module
npn 940
T018
T046
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