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    GAL16V8A NATIONAL SEMICONDUCTOR Search Results

    GAL16V8A NATIONAL SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GAL16V8A NATIONAL SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


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    PDF 2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB

    27C32

    Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
    Text: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512


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    PDF 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 27C32 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a

    C1995

    Abstract: DP83231 DP83241 DP83251 GAL16V8A SB-107 GAL22
    Text: National Semiconductor System Brief 107 August 1990 Serial Point-to-Point Data Communications SYSTEM DESCRIPTION Point-to-Point links are needed in any application where data throughput is the limiting factor to system performance They can be installed between a CPU and disk controller to


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    fiber delay line

    Abstract: gal16v8a national semiconductor 400X AN-679 C1995 DP83231 DP83241 DP83251 GAL16V8A electric scheme optic
    Text: National Semiconductor Application Note 679 Filipe Sanna Louise Yeung April 1990 TABLE OF CONTENTS 1 0 POINT-TO-POINT APPLICATIONS 2 0 SYSTEM OVERVIEW 3 0 CHANNEL SYNCHRONIZATION 3 1 Synchronization Timing Examples 4 0 PHY LAYER COMPONENTS 4 1 System Block Diagram


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    PDF 20-3A fiber delay line gal16v8a national semiconductor 400X AN-679 C1995 DP83231 DP83241 DP83251 GAL16V8A electric scheme optic

    PAL16L8 programming specifications

    Abstract: P85C220-10 PAL20L8 programming specifications PAL20L8 Altera EP220 N85C220 PAL16L8 GAL20V8B Intel N85C224 ADS-220
    Text: May 1995, ver. 1 Features Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ General Description Altera Corporation A-ds-220/224-01 EP220 & EP224 Classic EPLDs High-performance, low-power Erasable Programmable Logic Devices EPLDs with 8 macrocells


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    PDF -ds-220/224-01 EP220 EP224 16V8/20V8 EP220, EP224; EP220 PAL16L8 programming specifications P85C220-10 PAL20L8 programming specifications PAL20L8 Altera EP220 N85C220 PAL16L8 GAL20V8B Intel N85C224 ADS-220

    gal16v8

    Abstract: National SEMICONDUCTOR GAL16V8 gal20v8 PAL20P8 GAL22V10 85C220 PAL16L8 EP330 lattice GAL20V8 AMD PAL20P8
    Text: GAL Product Line Cross Reference MANUFACTURER ALTERA AMD PART # EP310 EP320 EP330 GAL16V8Z1 GAL16V81 or. GAL18V10 5C031 5C032 85C220 GAL16V81 or. GAL16V8Z or. GAL18V10 85C224 GAL20V81 or. GAL22V10 85C22V10 GAL22V10 PAL10H8 PAL10L8 PAL12H6 PAL12L6


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    PDF EP310 EP320 EP330 GAL16V8Z1 GAL16V81 GAL18V10 5C031 5C032 85C220 gal16v8 National SEMICONDUCTOR GAL16V8 gal20v8 PAL20P8 GAL22V10 85C220 PAL16L8 EP330 lattice GAL20V8 AMD PAL20P8

    National SEMICONDUCTOR GAL16V8

    Abstract: EP330 PLHS18P8 EP320 5c032 ATMEL GAL16V8 PALC22V10 ampal18p8 GAL16V8 LA4490
    Text: GAL Product Line Cross Reference MANUFACTURER ALTERA AMD PART # EP310 EP320 EP330 GAL16V8Z1 GAL16V81 or. GAL18V10 5C031 5C032 85C220 GAL16V81 or. GAL16V8Z or. GAL18V10 85C224 GAL20V81 or. GAL22V10 85C22V10 GAL22V10 PAL10H8 PAL10L8 PAL12H6 PAL12L6


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    PDF EP310 EP320 EP330 GAL16V8Z1 GAL16V81 GAL18V10 5C031 5C032 85C220 National SEMICONDUCTOR GAL16V8 EP330 PLHS18P8 EP320 5c032 ATMEL GAL16V8 PALC22V10 ampal18p8 GAL16V8 LA4490

    PLSI 1016-60LJ

    Abstract: PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT
    Text: Lattice Semiconductor Data Book 1996 Click on one of the following choices: • Table of Contents • Data Book Updates & New Products • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. ispLSI and pLSI Product Index Pins Density


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    PDF 1016E 1032E 20ters 48-Pin 304-Pin PLSI 1016-60LJ PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT

    gal programming algorithm

    Abstract: gal programming gal programming specification 6AL16V8A application GAL 16l8 16L8* GAL 6AL16 16V8A gal16vba GAL 16 v 8 D DIP
    Text: GAL16V8A-10, -12, -15, -20 mH 5g | National Semiconductor GAL16V8A-10, -12, -15, -20 Generic Array Logic General Description Features The NSC E2CMOStm GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology


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    PDF GAL16V8A-10, 20-pin GAL16V8A tl/l/9999-32 gal programming algorithm gal programming gal programming specification 6AL16V8A application GAL 16l8 16L8* GAL 6AL16 16V8A gal16vba GAL 16 v 8 D DIP

    Untitled

    Abstract: No abstract text available
    Text: GAL16V8A-10, -12, -15, -20 National Semiconductor GAL16V8A-10, -12, -15, -20 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology


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    PDF GAL16V8A-10, 20-pin GAL16V8A 20-pin TL/L/9999-32

    gal16v8a national semiconductor

    Abstract: GAL16V8A GAL Gate Array Logic
    Text: ATL SEMICÖND MEMORY 31E » bS0112b 00^4532 T PRELIMINARY GAL16V8A Generic Array Logic General Description Tha NSC E2CMOStm GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology


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    PDF bS0112b GAL16V8A GAL16V8A 20-pin GAL16V8A-12 GAL16V8A-15 GAL16V8A-20 gal16v8a national semiconductor GAL Gate Array Logic

    GAL16V8A

    Abstract: 14L4 L16V GAL16V8P gal16v8a national semiconductor
    Text: GAL16V8A Generic Array Logic General Description The N SC E 2C M O S GAL device combines a high per­ formance C M O S process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable


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    PDF GAL16V8A GAL16V8A 20-pin 14L4 L16V GAL16V8P gal16v8a national semiconductor

    PAL20L8

    Abstract: Altera EP220 EP220LC-12 PAL20L8 programming specifications PAL16L8 programming specifications N85C220 Altera 1995 DATE CODE PAL20L8 EP224LC-7 P85C224-80
    Text: Æ onf^ EP220 & EP224 Classic EPLDs Data Sheet May 1995, ver. 1 Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ General Description High-performance, low-power Erasable Programmable Logic Devices EPLDs w ith 8 macrocells Combinatorial speeds as low as 7.5 ns


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    PDF EP220 EP224 16V8/20V8 EP220 EP224; D5T5372 PAL20L8 Altera EP220 EP220LC-12 PAL20L8 programming specifications PAL16L8 programming specifications N85C220 Altera 1995 DATE CODE PAL20L8 EP224LC-7 P85C224-80

    Untitled

    Abstract: No abstract text available
    Text: 85C220/85C224-7 AND -10 FAST TpD, HALF-POWER 8-MACROCELL PLDs These Combinatorial Optimized Timing PLDs Offer Superior Design Features: • High-Performance Low-Power Upgrade for -7 and -10 Bipolar/CMOS* PLD’s in High-Performance Systems ■ tpo 7.5 ns, 74 MHz Frequency with


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    PDF 85C220/85C224-7

    PAL16L8 programming algorithm

    Abstract: 85C220 P85C220-7
    Text: IP tS O G Ä M f in te i 85C220/85C224-7 AND -10 COMBINATORIAL OPTIMIZED TIMING FAST 1-MICRON CHMOS 8-MACROCELL jaPLDs These Combinatorial Optimized Timing jaPLDs Offer Superior Design Features: 8 P-Terms, Selectable SOP Invert, OE P-Term for Each Macrocell


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    PDF 85C220/85C224-7 lntel386TM, 486TM, 20Pin 24-Pin 8SC220/85C224-7 PAL16L8 programming algorithm 85C220 P85C220-7

    GAL16V8QS-15LNC

    Abstract: No abstract text available
    Text: November 1993 Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8ju, EECMOS PLDs General Description Features The EECMOS GAL16V8QS devices are fabricated using National’s CS80BEV 0.8/j. Electrically Erasable CMOS pro­ cess. This advanced process makes National’s


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    PDF GAL16V8QS-10L, 20-Pin GAL16V8QS CS80BEV Cep-01451, GAL16V8QS-15LNC

    gal 16v8 programming algorithm

    Abstract: gal programming algorithm GAL programming Guide GAL16V8QS TAT 2159 opal 16V8A 16V8Q 16V8QS gal programming specification
    Text: Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8jli EEC M O S PLD s General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s


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    PDF GAL16V8QS-10L, 20-Pin GAL16V8QS CS80BEV Cep-01451, gal 16v8 programming algorithm gal programming algorithm GAL programming Guide TAT 2159 opal 16V8A 16V8Q 16V8QS gal programming specification

    GAL16V8QS15

    Abstract: 16V8QS GAL16V8QS SH 2104 20-PIN ic ir 2112 pin layout 527S49 gal programming specification opal GAL 16 v 8 D DIP
    Text: Semiconductor GAL16V8QS-10L, -15L 20-Pin 0.8jli EECMOS PLDs General Description Features Th e EECM OS G AL16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s


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    PDF GAL16V8QS-10L, 20-Pin GAL16V8QS CS80BEV Cep-01451, GAL16V8QS15 16V8QS SH 2104 ic ir 2112 pin layout 527S49 gal programming specification opal GAL 16 v 8 D DIP

    GAL16V8H

    Abstract: PALCE16V8H-15E4 smd marking YE lm 4572 SMD 8 PIN IC 4570 SMD
    Text: i l AMD DISTRIBUTION 4-562 S T A T E M E N T A . A p p r o v e d io r p u b l i c release; distribution is u n l i m i t e d . DESC Standardized Military Drawings AMD i n !. SCOPE ’ .I Sc op e. Th is a r a w m g d e s c r i b e s d e v i c e r e q u i r e m e n t s 'for c l a s s B m i c r o c i r c u i t s in a c c o r d a n c e • m h


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    PDF ll-STD-883, 5962-8983906RX 5962-89839062X GAL16VSA-20C0/883C GAL1673A-200R/6B3C PALCE16V8H GAL16V8H PALCE16V8H-15E4 smd marking YE lm 4572 SMD 8 PIN IC 4570 SMD

    synchronous inverter schematic ims 1600

    Abstract: elcot tv kit circuit diagram iosq 050 pin diagram for IC cd 1619 cp in fm smd code transistor sd IL44 Z ET 439 IL44 transistor ksv3100a UTM ceramic RESISTOR 390 210-9
    Text: CONFIGURABLE DESIGN PLD 1 S i 2 0 Regan Brampton, Tel: (4 1 6 Fax: (4 1 6 ) 9 • Si APPLICATION BOOK F P GA 9 LOGIC 4 Ì 4(I M A S S O C IA T E S Road, Unit 14 O ntario L 7 A 1C3 8 4 0 -6 0 6 6 8 4 0 -6 0 9 1 • GATE A R R A Y 1 9 9 5 iilmËL Atmel Programmable Logic Devices (PLDs)


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    PDF T22V10A T22V10AT22V10BAT22V10LAT22LV10AT22LV10LA TF22V10BA TF22V10BLA TF22V10B TF22V10BQLA T18V8ZA TF16V8BA TF16V8BLA TF16V8BQ synchronous inverter schematic ims 1600 elcot tv kit circuit diagram iosq 050 pin diagram for IC cd 1619 cp in fm smd code transistor sd IL44 Z ET 439 IL44 transistor ksv3100a UTM ceramic RESISTOR 390 210-9