J3780
Abstract: IMT-2000 NES1823M-240 J4083
Text: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT-2000 base station systems. It is capable of delivering 240 W of output power CW with high linear gain, high
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NES1823M-240
NES1823M-240
IMT-2000
J3780
J4083
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SMD M05 sot
Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial
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08/2M
SMD M05 sot
NESG303100G
SMD transistor M05
transistor NEC D 882 p
m33 tf 130
H02 SOT-363
SMD M05 sot23
UPC8236
T6N 700
NE68000 s-parameters
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Untitled
Abstract: No abstract text available
Text: AM010MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This
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AM010MH4-BI-R
AM010MH4-BI-R
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PT 4115
Abstract: maximum gain s2p AM020
Text: AM020MH2-BI HiFET High Voltage GaAs FET February 2004 v.1 DESCRIPTION AMCOM’s AM020MH2-BI is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a
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AM020MH2-BI
AM020MH2-BI
AM02MH2-BI
270mA)
PT 4115
maximum gain s2p
AM020
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AM030WH4-BI-R
Abstract: No abstract text available
Text: AM030WH4-BI-R January 2011 REV 3 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM030WH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This
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AM030WH4-BI-R
AM030WH4-BI-R
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Untitled
Abstract: No abstract text available
Text: AM072MX-QG-R August 2007 Rev. 2 Plastic Packaged GaAs Power FET DESCRIPTION AM072MX-QG-R is a GaAs MESFET in QG plastic package for SMT automatic assembly. This part has a total gate width of 7.2mm. The AM072MX-QG-R is designed for high power microwave applications,
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AM072MX-QG-R
AM072MX-QG-R
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AM300MX-CU
Abstract: No abstract text available
Text: AM300MX-CU High Power GaAs Power FET January 2003 Rev. 0 DESCRIPTION AMCOM’s AM300MX-CU is part of the CU series of GaAs MESFETs. This part has a total gate width of 30mm. The AM300MX-CU is designed for high power microwave applications, operating up to 6 GHz. The CU
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AM300MX-CU
AM300MX-CU
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Untitled
Abstract: No abstract text available
Text: AM024MX-QF-R Plastic Packaged GaAs Power FET August 2007, Rev. 1 DESCRIPTION AM024MX-QF-R is a GaAs MESFET with a total gate width of 2.4mm. It is RoHS compliant Denoted by –R . The AM024MX-QF-R is designed for high power microwave applications, operating up to 6 GHz. The QF
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AM024MX-QF-R
AM024MX-QF-R
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Untitled
Abstract: No abstract text available
Text: AM072MX-QF-R Plastic Packaged GaAs Power FET August 2007, Rev. 1 DESCRIPTION AM072MX-QF-R is a GaAs MESFET with a total gate width of 7.2mm. It is RoHS compliant Denoted by –R . The AM072MX-QF-R is designed for high power microwave applications, operating up to 6 GHz. The QF
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AM072MX-QF-R
AM072MX-QF-R
34dBm
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AM048MX-QG-R
Abstract: No abstract text available
Text: AM048MX-QG-R March 2010 Rev 2 Plastic Packaged GaAs Power FET DESCRIPTION AMCOM’s AM048MX-QG-R is a part of the QG series of GaAs MESFETs. This part has a total gate width of 4.8mm. The AM048MX-QG-R is designed for high power microwave applications, operating up to 6GHz.
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AM048MX-QG-R
AM048MX-QG-R
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Untitled
Abstract: No abstract text available
Text: AM036MX-QF-R Plastic Packaged GaAs Power FET August 2007, Rev. 1 DESCRIPTION AM036MX-QF-R is a GaAs MESFET with a total gate width of 3.6mm. It is RoHS compliant Denoted by –R . The AM036MX-QF-R is designed for high power microwave applications, operating up to 6 GHz. The QF
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AM036MX-QF-R
AM036MX-QF-R
31dBm
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Untitled
Abstract: No abstract text available
Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high
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CFY35
CFY35
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14524
Abstract: 98219 AM006MX-QF
Text: AM006MX-QF-R Plastic Packaged GaAs Power FET August 2007, Rev. 1 DESCRIPTION AM006MX-QF-R is a GaAs MESFET with a total gate width of 0.6mm. It is RoHS compliant Denoted by –R . The AM006MX-QF-R is designed for high power microwave applications, operating up to 6 GHz. The QF
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AM006MX-QF-R
AM006MX-QF-R
14524
98219
AM006MX-QF
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AM036MX-QG
Abstract: 157-195 63916
Text: AM036MX-QG Plastic Packaged GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM036MX-QG is a part of the QG series of GaAs MESFETs. This part has a total gate width of 3.6mm. The AM036MX-QG is designed for high power microwave applications, operating up to 6 GHz. The QG
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AM036MX-QG
AM036MX-QG
157-195
63916
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Untitled
Abstract: No abstract text available
Text: AM060WX-BI-R Ceramic Package GaAs Power pHEMT Aug 2010 Rev 1 DC-10 GHz DESCRIPTION 0.025 AMCOM’s AM060WX-BI-R is part of the BI series of GaAs pHEMTs. This part has a total gate width of 6mm. The AM060WX-BI-R is designed for high power microwave applications, operating up to 10GHz. The BI
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AM060WX-BI-R
DC-10
AM060WX-BI-R
10GHz.
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MGA653
Abstract: QFN PACKAGE Junction to PCB thermal resistance 633p MGA633 643p MGA-643P8
Text: MGA-635P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-635P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of
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MGA-635P8
MGA-635P8
75mm3
450MHz
AV02-2545N
MGA653
QFN PACKAGE Junction to PCB thermal resistance
633p
MGA633
643p
MGA-643P8
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Untitled
Abstract: No abstract text available
Text: MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-634P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of
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MGA-634P8
MGA-634P8
75mm3
450MHz
AV02-2544N
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GJM1555C1H150JB01D
Abstract: GJM1555C1H120JB01D MGA-17516 0402CS-30NXJLU A004R GJM1555C1H3R3CB01D LL1005-FHL22NJ RO4350 MGA16516B murata REEL label lot number
Text: MGA-16516 Low Noise, High Linearity Match Pair Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-16516 is an economical, easyto-use GaAs MMIC match pair Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through
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MGA-16516
MGA-16516
85mm3
16-pin
AV02-1980EN
GJM1555C1H150JB01D
GJM1555C1H120JB01D
MGA-17516
0402CS-30NXJLU
A004R
GJM1555C1H3R3CB01D
LL1005-FHL22NJ
RO4350
MGA16516B
murata REEL label lot number
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Untitled
Abstract: No abstract text available
Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of
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MGA-633P8
MGA-633P8
75mm3
450MHz
AV02-2329EN
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MGA-633P8
Abstract: No abstract text available
Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of
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MGA-633P8
MGA-633P8
75mm3
450MHz
AV02-2329EN
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Untitled
Abstract: No abstract text available
Text: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth
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CGB240B
22dBm,
-33dB
IEEE802
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xg1015-SE
Abstract: XG1015-SE-0G00 XG1015-SE LNA G1015-SE XG1015-SE-0G0T XG1015 NF50 G1015S
Text: 0.1-3.5 GHz GaAs pHEMT Current Adjustable, Low Noise Amplifier G1015-SE January 2010 - Rev 06-Jan-10 Features Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure, NF < 1 dB High Linearity, OIP3 > 34 dBm @ 2 GHz
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G1015-SE
06-Jan-10
OT-363
XG1015-SE
XG1015-SE-0G00
XG1015-SE LNA
G1015-SE
XG1015-SE-0G0T
XG1015
NF50
G1015S
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M3111N
Abstract: 22A114 irl 3710 m3111
Text: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 4, 9/2012 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,
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MMH3111NT1
M3111N
22A114
irl 3710
m3111
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Rogers RO4350B
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 1, 8/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage
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MMZ25333B
MMZ25333B
MMZ25333BT1
8/2014Semiconductor,
Rogers RO4350B
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