TGS 2201
Abstract: x-band limiter "Variable Capacitance Diode" X-band pin diode limiter VPIN Vertical P-I-N GaAs Diode limiters TGA2304-SCC x-band limiter diode ADS 10 diode RF limiter PIN diode
Text: VPIN Vertical P-I-N GaAs Diode Process Data Sheet Features Ti/Pt/Au, 0.6 µm • • • • • • • • • • p-GaAs, 0.25 µm Contacts i-GaAs, 1.2 µm n-GaAs, 0.75 µm Multiple P-I-N diode sizes Low on-state resistance Low off-state capacitance Device passivation
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SM 850nm laser
Abstract: No abstract text available
Text: LASER DIODE LC850D6S-N/P LC850D6S-N/P is 850nm AIGaAs/GaAS MQW fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC850D6S-N/P is a CW single mode injection semiconductor
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LC850D6S-N/P
LC850D6S-N/P
850nm
850d6s
SM 850nm laser
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uv phototransistor
Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200
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14-Apr-04
uv phototransistor
8602 rectifier
photodiode ge
uv photodiode, GaP
TSAL6200
ga09
80086
"photoconductive" 1015
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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uv phototransistor
Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200
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TSAL6200
Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si
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2 Wavelength Laser Diode
Abstract: Opto Diode opto laser laser diode chip DIODE CHIP
Text: AlGaInP/GaAs Laser Diode Chip ▓ LI650C Scope : This specification applies to AlGaInP/GaAs Laser Diode Chip. ▓ Structure : 1 Edge emitting type 2) Narrow stripe 3) Index guided quantum well 4) P anode) side: gold alloy N (cathode) side: gold alloy ▓
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LI650C
2 Wavelength Laser Diode
Opto Diode
opto laser
laser diode chip
DIODE CHIP
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Untitled
Abstract: No abstract text available
Text: OKI electronic components OCS32 O p t ic a l P N P N S w it c h e s GENERAL DESCRIPTION The OCS32 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light em itting diode acts as the input
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OCS32
OCS32
b724240
2424G
2424D
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gunn diodes
Abstract: AH443 GUNN impatt DH385 AH365 DH378 AH152 AH802 GaAs p-i-n diodes
Text: DIODES SELECTION GUIDE P R O D U C T S REF. D E S C R IP T IO N AH152 to AH 169 GaAs Abrupt tuning Varactors AH202 to AH240 GaAs Hyperabrupt tuning Varactors AH365 to AH380 GaAs Gunn Diodes 18-26GHz AH443 to AH497 GaAs Gunn Diodes (9-18GHZ) AH501 to AH539
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AH152
18-26GHz)
9-18GHZ)
10-16GHz)
94GHz
AH202
AH240
AH365
AH380
gunn diodes
AH443
GUNN
impatt
DH385
DH378
AH802
GaAs p-i-n diodes
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APX378
Abstract: C116
Text: APX378 GaAs BEAM LEAD SCHOTTKY R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz Low capacitance Extremely rugged Passivated planar process construction. A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used as mixer or detector in receivers of frequency
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APX378
94GHz
94GHz.
APX378)
APX378
C116
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Untitled
Abstract: No abstract text available
Text: mu GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 O P TO ELEC TR O N IC PRODUCTS DIVISION * HIGH INTENSITY GaAIAs VERSION AVAILABLE RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 is a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to
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MIL-S-19500.
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T572S
Abstract: tv sony 1435 J50 O 26 dual-gate 17458 3SK147
Text: 77 SO N Y C O R P / C O M P O N E N T PR O D S DE 1ñ3fl23fl3 OOOOEEfl fl | ~ 0 ^ 3 1 ’* 2 5 GaAs N-channel Dual-Gate MES FET D e scrip tio n : The 3SK147 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise, high gain
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3fl23fl3
3SK147
800MHz
T572S
tv sony 1435
J50 O 26
dual-gate
17458
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Untitled
Abstract: No abstract text available
Text: 8382383 SONY C O R P /C O M P O N E N T 77C 0 0 2 5 8 PRODS D 7' - & - ? ~ o 7 1T379 GaAs Schottky Barrier Diode a Description: The 1T379 is a low noise GaAs Schottky barrier diode designed for mixer applications up to the Ku-band. Plastic mold packaging has been adopted to reduce cost.
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1T379
1T379
Volt941
fl3fl23fl3
12GHz
5-85-2M
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Siemens RS 1001 L
Abstract: SFH2030
Text: SIEMENS LD274 LD275 GaAs INFRARED EMITTER * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation in Near Infrared Range O p e r a tin g /S to ra g e T e m p e r a tu r e R a n g e T o p , Ts t g * High Efficiency
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LD274
LD275
LD274:
LD275:
SFH484
BP103B,
SFH415,
SFH485,
Siemens RS 1001 L
SFH2030
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L53SF4B
Abstract: L-34SF4C l53f3b
Text: Kingbright INFRARED EMITTING DIODES L34F3C AM4457F3C ! L53F3BT n j« | Emitting Color + Material P nm Lens Type Po (mW/sr) @20mA *50mA Min. Typ. i Viewing Angle Dimension 201/2 1.5mm (Side Look) 5.72(.225) AM4457F3C GaAs 940 water clear L34F3C GaAs 940
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AM4457F3C
L34F3C
L53F3BT
AM4457F3C
L34F3BT
L34SF7C
L34SF7BT
L53F3C
L53SF4B
L-34SF4C
l53f3b
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SGM2016M
Abstract: SGM2016P Sony Semiconductor sony tuners HA 1166 NF 935 b 772 p dual-gate E-9217 sony 174A
Text: SONY SGM2016M/P1 GaAs N-channel Dual-Gate MES FET_ |For the availability of this product, please contact the sales office. Description Package Outline Unit : mm The SGM2016M/P is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This
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SGM2016M/P1
SGM2016M/P
900MHz
SGM2016M
SGM2016P
Sony Semiconductor
sony tuners
HA 1166
NF 935
b 772 p
dual-gate
E-9217
sony 174A
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter £ - 5 u . 2.1 1 .5 2 .5 4 C a th o d e LD 1 D e ta c h in g fla s h a re a n o t tru e A p p ro x . .n o h o l' ° R a d ia n t s e n s itiv e (0 .4 X 0 .4 ) v - C o lle c to r (B P X LD 261 s p a c in g
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E006021
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTO SCR COUPLERS ELECTRON DEVICE PS3001 1 , PS3002 (1) PHOTO S C R COUPLER DESCRIPTION The PS3001 and PS3002 are optically oouptcd isolators containing GaAs infrared em itting diode and a P N P N silicon photo S C R . PACKAGE DIMENSIONS In nùllimran (inch«)
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PS3001
PS3002
PS3001
PS3002
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T L P 3 540 Unit in mm M EM O R Y TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT 7 6 5 CT1 n_ n l~P MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared emitting diode optically coupled to a photo-MOSFET in a 8-pin DIP package.
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TLP3540
TLP3540
5X1010
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SE308T
Abstract: No abstract text available
Text: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE308-T GaAs INFRARED EMITTING DIODE -N E P O C SERIES— D ESCRIPTIO N The SE308 is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lud frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.
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SE308-T
SE308
PH108.
J22686
SE308T
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SE304
Abstract: No abstract text available
Text: N EC 3ÜE D ELECTRONI CS INC • b427555 002*1046 S ■ " T -H I-i/ LIG HT EMITTING DIODE SE304 GaAs IN F RA R ED E M IT T IN G DIO DE -N E P O C S E R IE S — The SE304 is a GaAs Ga!lium Arsenide Infrared LEO in a plastic PA C K A G E D IM E N S IO N S
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bM5755S
SE304
SE304
Ta-25
bH2752S
T-41-11
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Untitled
Abstract: No abstract text available
Text: ma GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 OPTO ELE CT RON IC PRODUCTS D I VI SI O N * HIGH INTENSITY GaAIAs VERSION AVAILABLE RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 ¡s a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to
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MIL-S-19500.
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EL-7L
Abstract: EL-1CL3H EL7L
Text: Infrared Emitting Diodes E M IT T E R S A P P L IC A T IO N : R em ote C o n tro l/O p tic al S w itch /O p to is o lato r/ C hop per/P attern Recognition INFRARED EM ITTING DIODES GaAs (Ta=25°C) A bsolute m axim u m Ratings T y p e N o. lF(mA) V r(V )
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siemens LD
Abstract: No abstract text available
Text: SIEMENS LD 242 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 2 .7 • p * Chip position 0 0 .4 5 Anode LD 2 4 2 , BPX 6 3 , SFH Cathode (S FH 464 483) A p p ro x. w eight 0 .5 g M a ß e in m m , w enn nicht and ers a n g eg eb en /D im en s io n s in m m , unless otherw ise specified.
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