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    GAAS MMIC SPDT TERMINATED SWITCH DC - 6GHZ Search Results

    GAAS MMIC SPDT TERMINATED SWITCH DC - 6GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    GCJ31BR7LV223KW01K Murata Manufacturing Co Ltd Soft Termination Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GCJ43DR7LV224KW01K Murata Manufacturing Co Ltd Soft Termination Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    GAAS MMIC SPDT TERMINATED SWITCH DC - 6GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NN12

    Abstract: P35-4211-0 P35-4227-0
    Text: P35-4227-0 GaAs MMIC SPDT REFLECTIVE/TERMINATED SWITCH, DC - 6GHz Features • • Broadband performance High Isolation; 40dB typ at 3GHz • Low insertion loss; 0.8dB typ at 3GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical Description


    Original     		PDF P35-4227-0 P35-4227-0 P35-4211-0 462/SM/00042/200 NN12 P35-4211-0

    P35-4227-000-200

    Abstract: P35-4227-0 GaAs MMIC SPDT TERMINATED SWITCH DC - 6GHz NN12
    Text: Data sheet GaAs MMIC SPDT Reflective/Terminated Switch, DC - 6GHz Features The P35-4227-000-200 is a high performance Gallium Arsenide single pole double throw broadband RF switch. It is suitable for use in broadband communications and instrumentation applications. The RF outputs can be


    Original     		PDF P35-4227-000-200 P35-4227-000-200 462/SM/00042/200 P35-4227-0 GaAs MMIC SPDT TERMINATED SWITCH DC - 6GHz NN12

    GaAs MMIC SPDT TERMINATED SWITCH DC - 6GHz

    Abstract: GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz 4227 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz 4227 P35-4227-C06-200 P35-4227-C06-300 4227 SPDT NN12
    Text: Data sheet GaAs MMIC SPDT Terminated Switch, DC - 6GHz The P35-4227-C06-300 is a high performance Gallium Arsenide single pole double throw broadband RF switch. It is suitable for use in broadband communications and instrumentation applications. A 50 Ω termination is presented


    Original     		PDF P35-4227-C06-300 P35-4227-C06-200 463/SM/00128/200 GaAs MMIC SPDT TERMINATED SWITCH DC - 6GHz GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz 4227 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz 4227 P35-4227-C06-200 4227 SPDT NN12

    NN12

    Abstract: P35-4227-0
    Text: P35-4227-0 Marconi Optical Components GaAs MMIC SPDT Reflective/Terminated Switch, DC - 6GHz Features • · · · · Broadband performance High Isolation; 40dB typ at 3GHz Low insertion loss; 0.8dB typ at 3GHz Ultra low DC power consumption Fast switching speed; 3ns typical


    Original     		PDF P35-4227-0 P35-4227-0 462/SM/00042/200 NN12

    P35-4227-C06-200

    Abstract: NN12
    Text: P35-4227-C06-200 Marconi Optical Components GaAs MMIC SPDT Terminated Switch, DC - 6GHz Features • · · · · · Broadband performance High isolation; 32dB typ at 3GHz Low insertion loss; 1.0dB typ at 3GHz Ultra low DC power consumption Fast switching speed; 3ns typical


    Original     		PDF P35-4227-C06-200 P35-4227-C06-200 463/SM/00128/200 NN12

    P35-4227-C06-200

    Abstract: Marconi NN12
    Text: P35-4227-C06-200 GaAs MMIC SPDT TERMINATED SWITCH, DC - 6GHz Features • Broadband performance • High isolation; 32dB typ at 3GHz • • Low insertion loss; 1.0dB typ at 3GHz Ultra low DC power consumption • Fast switching speed; 3ns typical • SO8 surface mount ceramic package


    Original     		PDF P35-4227-C06-200 P35-4227-C06-200 463/SM/00128/200 Marconi NN12

    GaAs MMIC SPDT Switch DC-3GHz

    Abstract: EMS101-C
    Text: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY Caution! ESD sensitive device.


    Original     		PDF EMS101-C EMS101-C 50ohm GaAs MMIC SPDT Switch DC-3GHz

    EMS101-C

    Abstract: 100umx100um
    Text: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 09/29/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY


    Original     		PDF EMS101-C EMS101-C 50ohm 100umx100um

    Untitled

    Abstract: No abstract text available
    Text: EMS101-C ISSUED DATE: 07-18-03 PRELIMINARY DATA SHEET DC – 6GHz GaAs MMIC SPDT SWITCH FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		PDF EMS101-C EMS101-C 50ohm 100umx100um. 31dBm -40oC -65oC 150oC

    EMS101-C

    Abstract: 7371711 DR 25 insertion loss
    Text: EMS101-C DATA SHEET Release Date: March 7, 2003 DC-6GHz GaAs MMIC SPDT SWITCH FEATURES l l l l l l l BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY


    Original     		PDF EMS101-C EMS101-C 50ohm 100um 100um. 31dBm -40oC -65oC 150oC 7371711 DR 25 insertion loss

    EMS101-P

    Abstract: No abstract text available
    Text: EMS101-P DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 03/31/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY


    Original     		PDF EMS101-P EMS101-P 50ohm ELECTRIC1/2008 31dBm -40oC -65oC 150oC

    rf switch spdt

    Abstract: GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz GaAs MMIC SPDT Switch DC 3GHz EMS101-P power rf switch DC-6GHz
    Text: EMS101-P DATA SHEET Release Date: March 7, 2003 DC-6GHz GaAs MMIC SPDT SWITCH FEATURES l l l l l l l BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY


    Original     		PDF EMS101-P EMA101-P 50ohm 31dBm -40oC -65oC 150oC rf switch spdt GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz GaAs MMIC SPDT Switch DC 3GHz EMS101-P power rf switch DC-6GHz

    Untitled

    Abstract: No abstract text available
    Text: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 03/31/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY


    Original     		PDF EMS101-C EMS101-C 50ohm 100umx100um. 31dBm -40oC -65oC 150oC

    Untitled

    Abstract: No abstract text available
    Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL


    Original     		PDF RFSW1012 12-Pin, 6000MHz 75dBm 100dBc 41dBmV/ch. DS140203

    Untitled

    Abstract: No abstract text available
    Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50 or 75 Applications  Low Insertion Loss: 0.30dB at 1980MHz  High Isolation: 37dB at 2GHz  High IP3: >75dBm at 2GHz


    Original     		PDF RFSW1012 12-Pin, 1980MHz 75dBm 100dBc 41dBmV/ch. DS120821

    RFSW1012TR7

    Abstract: RFMD PA LTE DS1303 RFSW1012SQ
    Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL


    Original     		PDF RFSW1012 RFSW1012 12-Pin, 6000MHz 1980MHz 75dBm 100dBc 41dBmV/ch. DS130311 RFSW1012TR7 RFMD PA LTE DS1303 RFSW1012SQ

    RFSW1012TR7

    Abstract: RFSW1012 SW1012-410 SW1012-411 RFMD PA LTE
    Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50: or 75: Applications „ Low Insertion Loss: 0.30dB at 1980MHz „ High Isolation: 37dB at 2GHz „ High IP3: >75dBm at 2GHz


    Original     		PDF RFSW1012 RFSW1012 12-Pin, 6000MHz 1980MHz 75dBm 100dBc 41dBmV/ch. DS130219 RFSW1012TR7 SW1012-410 SW1012-411 RFMD PA LTE

    Untitled

    Abstract: No abstract text available
    Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL


    Original     		PDF RFSW1012 12-Pin, 6000MHz 75dBm 100dBc 41dBmV/ch. DS140418

    rf switch spdt

    Abstract: No abstract text available
    Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL


    Original     		PDF RFSW1012 RFSW1012 12-Pin, 6000MHz 1980MHz 75dBm 100dBc 41dBmV/ch. DS120601 rf switch spdt

    RFSW1012SQ

    Abstract: RF238 RFSW1012PCK-410 RFSW1012 RF-1 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz RFSW1012PCK-411 rf switch spdt
    Text: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL


    Original     		PDF RFSW1012 RFSW1012 12-Pin, 6000MHz 1980MHz 75dBm 100dBc 41dBmV/ch. DS120821 RFSW1012SQ RF238 RFSW1012PCK-410 RF-1 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz RFSW1012PCK-411 rf switch spdt

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: '' *41 HITTITE MICROWAVE CORPORATION GaAs MMIC Broadband SPDT Switch HMC108 PRELIMINARY DATASHEET, MAY 1991 Features BANDWIDTH: DC-6GHz LOW INSERTION LOSS: HIGH ISOLATION <0.8dB >30dB General Description Typical Performance The HM C108 chip is a fast, low-loss SPDT


    OCR Scan     		PDF HMC108 HMC107

    HP 4514 v

    Abstract: 1GG7-4201 hp 4514 1GG7
    Text: What HEWLETT* mLliM PACKARD DC - 6 GHz Unterminated SPDT Switch Technical Data HMMC-2006 Features • Frequency Range: DC-6 GHz • Insertion Loss: <ldB @ 6G H z • Isolation: > 70 dB @ 45 MHz >35dB@ 6G H z • Return Loss: > 12 dB Both Input & Output • Sw itching Speed: < 1 ns


    OCR Scan     		PDF HMMC-2006 27dBm HMMC-2006 ossl11vs. HP 4514 v 1GG7-4201 hp 4514 1GG7

    Untitled

    Abstract: No abstract text available
    Text: -u: v, <4 ^ HITTITE MICROWAVE CORPORATION GaAs MMIC Non-Reflective SPDT Switch HMC104 PRELIMINARY DATA SHEET, MAY 1991 Features BANDWIDTH: LOW INSERTION LOSS: HIGH ISOLATION: DC-6GHz <1dB >40dB Typical Performance General Description °r *1r The HMC104 chip is a fast, broadband


    OCR Scan     		PDF HMC104 HMC104