3906 PNP TRANSISTOR
Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET
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AN-0002
3906 PNP TRANSISTOR
irlml6401tr
LMK316BJ475KL
MAX881
AN-0002
MAX881R
RFS1003
RFS1006
AN0002
"Dual PNP Transistor" temperature compensation
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Untitled
Abstract: No abstract text available
Text: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24
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S510065-55Z
S510065
DS140120
S51006555ZSB
S51006555ZSQ
25pcs
S51006555ZSR
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MRF9820T1
Abstract: 16 SOT-143 MOTOROLA
Text: MOTOROLA Order this document by MRF9820T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line GaAs MESFET AGC Amplifier MRF9820T1 The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use in low noise front end amplifier or downconverter applications. The device
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MRF9820T1/D
MRF9820T1
MRF9820T1
16 SOT-143 MOTOROLA
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S5100
Abstract: X6959M HZ0603 hz0603b102 epcos EC 90 11 O 97ag
Text: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24 23 GND VID
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S510065-55Z
S510065
DS091123
S51006555ZSB
S51006555ZSQ
25pcs
S51006555ZSR
S5100
X6959M
HZ0603
hz0603b102
epcos EC 90 11 O
97ag
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MESFET Application
Abstract: No abstract text available
Text: Broadband Standard Product AT0000601-20 GaAs Step Attenuator DC - 6GHz Single Bit, 0/20dB using MESFET Elements February 11, 2009 Preliminary www.aeroflex.com/bband DESCRIPTION FEATURES The AT0000601-20 is a single bit, 0/20 dB high linearity solid state step attenuator using Agilent Technologies GaAs technology. It
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AT0000601-20
0/20dB
SCD14001
MESFET Application
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ATF54143.s2p
Abstract: 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF-54143 ATF54143 atf54143 pHEMT AN-1222 BCV62C
Text: A 100 MHz to 500 MHz Low Noise Feedback Amplifier using ATF-54143 Application Note 5057 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide GaAs devices, MESFET and pHEMT. Power amplifiers based on GaAs can achieve high efficiency
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ATF-54143
MTT-28,
ATF-54143
5989-0852EN
ATF54143.s2p
5988-2336EN
transistor C610
5989-0034EN
TOKO LL1608-FSR15
ATF54143
atf54143 pHEMT
AN-1222
BCV62C
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TQP200002
Abstract: TQP200002 ESD Protection Device
Text: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents
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TQP200002
TQP200002
voltages15
TQP200002 ESD Protection Device
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SGF32
Abstract: U 821 B
Text: Ordering number : ENN7195A SGF32 N-Channel GaAs MESFET SGF32 For C to Ku-Band Local Oscillator and Amplifier Features • • • • Package Dimensions Lower Phase Noise. Highly reliable protection film. Automatic surface mounting supported. MCPH4 package.
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ENN7195A
SGF32
SGF32]
SGF32
U 821 B
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hp 1458
Abstract: SGF33 3048A sb wa 340
Text: Ordering number : ENN7196A SGF33 N-Channel GaAs MESFET SGF33 For C to Ku-Band Local Oscillator and Amplifier Features • • • • Package Dimensions Low phase noise. Highly reliable protection film. Automatic surface mounting supported. MCPH4 package.
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ENN7196A
SGF33
SGF33]
hp 1458
SGF33
3048A
sb wa 340
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SGF32
Abstract: Mason Company
Text: Ordering number : ENN7195 SGF32 N-Channel GaAs MESFET SGF32 For C to Ku-Band Local Oscillator and Amplifier Features • • • • Package Dimensions Lower Phase Noise. Highly reliable protection film. Automatic surface mounting supported. MCPH4 package.
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ENN7195
SGF32
SGF32]
SGF32
Mason Company
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TQP200002
Abstract: TQP200002 ESD Protection Device
Text: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents
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TQP200002
TQP200002
voltages15
TQP200002 ESD Protection Device
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08GHz
Abstract: No abstract text available
Text: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A
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ENN2671
3SK189
3SK189]
08GHz
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3SK189
Abstract: No abstract text available
Text: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A
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ENN2671
3SK189
3SK189]
3SK189
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MESFET Application
Abstract: No abstract text available
Text: HMC637LP5 / 637LP5E v02.0709 Amplifiers - lineAr & power - smT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HmC637lp5 e wideband pA is ideal for: p1dB output power: +29 dBm • Telecom infrastructure Gain: 13 dB
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HMC637LP5
637LP5E
25mm2
MESFET Application
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CLX30
Abstract: CLX30-00 CLX30-05 CLX30-10
Text: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLX30
CLX30-00
MWP-25
CLX30-05
CLX30-10
CLX30-nn:
QS9000
CLX30
CLX30-00
CLX30-05
CLX30-10
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MESFET Application
Abstract: No abstract text available
Text: HMC637LP5/637LP5E v03.1213 Amplifiers - SMT GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT
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HMC637LP5/637LP5E
HMC637LP5
25mm2
MESFET Application
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0280 130 026
Abstract: CFY27 CFY27-38 CFY27-P CFY25-20 TBC 547 B 35 micro-X Package MARKING CODE Q
Text: CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power
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CFY27
CFY27-38
CFY27-P
CFY27-nnl:
QS9000
0280 130 026
CFY27
CFY27-38
CFY27-P
CFY25-20
TBC 547 B
35 micro-X Package MARKING CODE Q
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CLX34
Abstract: CLX34-00 CLX34-05 CLX34-10
Text: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLX34
CLX34-00
MWP-25
CLX34-05
CLX34-10
CLX34-nn:
QS9000
CLX34
CLX34-00
CLX34-05
CLX34-10
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CLY35
Abstract: CLY35-00 CLY35-05 CLY35-10
Text: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLY35
CLY35-00
MWP-35
CLY35-05
CLY35-10
CLY35-nn:
QS9000
CLY35
CLY35-00
CLY35-05
CLY35-10
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Untitled
Abstract: No abstract text available
Text: HMC637LP5/637LP5E v03.1213 AMPLIFIERS - SMT GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT
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HMC637LP5/637LP5E
HMC637LP5
25mm2
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CLY38
Abstract: CLY38-00 CLY38-05 CLY38-10
Text: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLY38
CLY38-00
MWP-35
CLY38-05
CLY38-10
CLY38-nn:
QS9000
CLY38
CLY38-00
CLY38-05
CLY38-10
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CLY32
Abstract: CLY32-00 CLY32-05 CLY32-10
Text: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLY32
CLY32-00
MWP-25
CLY32-05
CLY32-10
CLY32-nn:
QS9000
CLY32
CLY32-00
CLY32-05
CLY32-10
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CLX32
Abstract: CLX32-00 CLX32-05 CLX32-10
Text: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLX32
CLX32-00
MWP-25
CLX32-05
CLX32-10
CLX32-nn:
QS9000
CLX32
CLX32-00
CLX32-05
CLX32-10
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752 J 1600 V CAPACITOR
Abstract: RF MESFET S parameters MESFET S parameter network resistor P0* RF SOT89 752 C 1600 V CAPACITOR
Text: TRF7000 POWER GaAs MESFET ^ _ SLW S027-JULY 1996 • 3.6-V and 4.8-V Operating Voltage for AMPS/NADC and GSM Cellular Telephone Applications Respectively • High Power Efficiency - at 35 dBm Output Power, 53% PAE Typical
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TRF7000
SLWSQ27-JULY
OT-89
descripRF7000
SLWS027-JULY
752 J 1600 V CAPACITOR
RF MESFET S parameters
MESFET S parameter
network resistor
P0* RF SOT89
752 C 1600 V CAPACITOR
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