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    GAAS FET VHF UHF Search Results

    GAAS FET VHF UHF Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CO-213UHFMX20-005 Amphenol Cables on Demand Amphenol CO-213UHFMX20-005 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 5 ft Datasheet
    CO-213UHFMX20-050 Amphenol Cables on Demand Amphenol CO-213UHFMX20-050 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 50 ft Datasheet
    CO-213UHFMX20-100 Amphenol Cables on Demand Amphenol CO-213UHFMX20-100 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 100 ft Datasheet
    CO-213UHFMX20-010 Amphenol Cables on Demand Amphenol CO-213UHFMX20-010 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10 ft Datasheet
    CO-213UHFMX20-015 Amphenol Cables on Demand Amphenol CO-213UHFMX20-015 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 15 ft Datasheet
    CO-213UHFMX20-025 Amphenol Cables on Demand Amphenol CO-213UHFMX20-025 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 25 ft Datasheet

    GAAS FET VHF UHF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F 739 DC

    Abstract: gaas fet vhf uhf F1215 Q62702-F1215 gaas fet marking a MARKING CF AC 1507 -0720 CF739ms
    Text: GaAs FET CF 739 Features N-channel dual-gate GaAs MES FET ● Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners ● Low noise ● High gain ● Low input capacitance ● ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1215 OT-143 F 739 DC gaas fet vhf uhf F1215 Q62702-F1215 gaas fet marking a MARKING CF AC 1507 -0720 CF739ms

    Untitled

    Abstract: No abstract text available
    Text: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1


    Original     		PDF HA21001MS

    0949

    Abstract: F 739 DC Q62702-F1215
    Text: CF 739 GaAs FET ● ● ● ● ● CF 739 N-channel dual-gate GaAs MES FET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners Low noise High gain Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1215 OT-143 0949 F 739 DC Q62702-F1215

    Type CF 739 Marking Ordering Code MSs

    Abstract: SOT143 marking code 11s VTA-100
    Text: CF 739 GaAs FET 3 • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal 4 applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners 2 • Low noise • High gain 1 VPS05178 • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05178 Q62702-F1215 OT-143 Sep-30-1998 EHT07328 EHT07329 Type CF 739 Marking Ordering Code MSs SOT143 marking code 11s VTA-100

    smd transistor marking cf

    Abstract: transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF
    Text: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-143 Q62702-F1215 P-SOT143-4-1 EHT07329 GPS05559 smd transistor marking cf transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF

    transistor smd cf

    Abstract: CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318
    Text: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-F1215 OT-143 P-SOT143-4-1 EHT07329 GPS05559 transistor smd cf CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318

    3sk272

    Abstract: No abstract text available
    Text: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 Gate 2 to Source voltage Drain current Gate 1 current Gate 2 current Allowable power dissipation Channel temperature Storage temperature


    Original     		PDF 3SK272 3sk272

    3SK241

    Abstract: 2V040
    Text: High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.


    Original     		PDF 3SK241 800MHz 3SK241 2V040

    Untitled

    Abstract: No abstract text available
    Text: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.


    Original     		PDF 3SK273 800MHz

    3SK241

    Abstract: No abstract text available
    Text: High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.


    Original     		PDF 3SK241 800MHz 3SK241

    3SK273

    Abstract: No abstract text available
    Text: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.


    Original     		PDF 3SK273 800MHz 3SK273

    3sk272

    Abstract: IG2D
    Text: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 13 V Gate 1 to Source voltage VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA


    Original     		PDF 3SK272 800MHz 3sk272 IG2D

    3SK273

    Abstract: No abstract text available
    Text: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 V −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA Gate 2 current


    Original     		PDF 3SK273 3SK273

    3SK241

    Abstract: No abstract text available
    Text: High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA


    Original     		PDF 3SK241 3SK241

    transistor marking 7D

    Abstract: marking MS 7d marking "marking ms"
    Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F1215 OT-143 transistor marking 7D marking MS 7d marking "marking ms"

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F1215 T-143 E3Sb05 23SLQ5

    CF739

    Abstract: 7S66 1 928 300 599 marking MS "marking ms"
    Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F1215 OT-143 CF739 7S66 1 928 300 599 marking MS "marking ms"

    HA21001MS

    Abstract: ha21001
    Text: HA21001 MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package Pin Arrangement 4—' 3 Q_ C •»-* 3 Q_ C


    OCR Scan     		PDF HA21001 HA21001MS HA21001MS

    gaas fet vhf uhf

    Abstract: ha21001 HA21001MS C4466 MSP-18 ha2100 2200p
    Text: HITACHI/ LINEAR DEVICES 2bE J> 4McJb2DE 0 0 1 1 3 5 T 4 H A 2 1 0 0 1 M S - - T*T7-OS-OS- VHF/UHF Tuner Use GaAs 1C Features HA21001MS • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET


    OCR Scan     		PDF HA21001MS- 001135T HA21001MS MSP-18) HA21001 MSP-18 -30dBm -40dBm 75MHz 60MHz gaas fet vhf uhf HA21001MS C4466 ha2100 2200p

    transistor marking YD ghz

    Abstract: EHT07317
    Text: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-F1215 P-SOT143-4-1 EHT07327 transistor marking YD ghz EHT07317

    2SK66

    Abstract: No abstract text available
    Text: 2SK1092 - Preliminary SIE D • SINGLE GATE GaAs M ES FET HITACHI/ OPTOELECTRONICS VHF/UHF W IDE BAND AMPLIFIER I MMTbEQS 0011700 071 ■ HITM OUTLINE DRAWING ■ A B S O L U T E M AXIMUM R A T IN G S


    OCR Scan     		PDF 2SK1092 d--20mA, -20mA, /-50M /c--20mA, /-900M 2SK66

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CF 739 GaAs FET F eatures • N -channel d u a l-g a te G aA s M E S FET • D epletion m ode tran sisto r for tuned sm all-signal ap p lica tio ns up to 2 G Hz, e. g. VHF, UHF, S at-TV tuners • Low noise • High gain • Low input ca p a citan ce


    OCR Scan     		PDF EHT07529

    2SK1092

    Abstract: 2SK666
    Text: 2SK1092 Preliminary SINGLE GATE GaAs MES FET VHF/UHF WIDE BAND AMPLIFIER • OUTLINE DRAWING 1.8 Z ;£T rJ = m 0~0 1 ;ä : 1• 2. 3. 4. Source G ate NC D rain Dim ensions in mra (MPAK-4) I ABSOLUTE MAXIMUM RATINGS (To-25*C ) Item Drain to Source Voltage


    OCR Scan     		PDF 2SK1092 To-25 -20mA, 50MHz --900MHz 2SK666 2SK1092 2SK666

    CF739 R

    Abstract: CF739 siemens gaas fet
    Text: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain


    OCR Scan     		PDF 023ti3SQ 0G17342 CF739 00MHz 23b32ü Q017347 CF739 CF739 R siemens gaas fet