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    GAAS FET AMPLIFER Search Results

    GAAS FET AMPLIFER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HMC863ALC4TR Analog Devices Amplifer Visit Analog Devices Buy
    HMC863ALC4TR-R5 Analog Devices Amplifer Visit Analog Devices Buy
    DC092A-B Analog Devices LTC1551: -4.1V OUTPUT GaAs FET Visit Analog Devices Buy
    ADA4432-1BCPZ-R2 Analog Devices High Speed Video Filter Amplif Visit Analog Devices Buy
    ADA4432-1BCPZ-R7 Analog Devices High Speed Video Filter Amplif Visit Analog Devices Buy

    GAAS FET AMPLIFER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C10535E

    Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
    Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package


    Original     		PDF NE72218 NE72218-T1 NE72218-T2 C10535E NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58

    SHF-0189

    Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
    Text: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET


    Original     		PDF AN-031 SHF-0189 EAN-101798 SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet

    SHF-0289

    Abstract: MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S
    Text: DESIGN APPLICATION NOTE - AN-032 SHF-0289 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET


    Original     		PDF AN-032 SHF-0289 EAN-101799 MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    GaAs FET amplifer

    Abstract: AW1218301N AW612304 AP45401 ph01 AL26501 AL618801 AW218201N AW26204 AW26201N
    Text: MicroWave Technology, Inc. MICROWAVE AMPLIFIERS Standard Amplifier Capability MicroWave Technology, Inc. has been a leading manufacturer of high performance amplifiers since it was founded in 1982. MwT’s principal strengths are derived from an in-house quarter micron Gallium Arsenide device


    Original     		PDF PH-01 GaAs FET amplifer AW1218301N AW612304 AP45401 ph01 AL26501 AL618801 AW218201N AW26204 AW26201N

    TGF4250

    Abstract: r02107 TGF4260 TGF4230 TGF4240 Design Seminar Signal Transmission ab 7614 Au Sn eutectic R0210
    Text: APPLICATION NOTES: INTRODUCTION Designing High Efficiency Applifiers using HFETs HFET TriQuint Semiconductor has developed a range of Heterostructure FETs designed for power amplifier applications where high power-added efficiency is a key specification. They also offer the


    Original     		PDF

    CAP 0402

    Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
    Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm


    Original     		PDF CMH0819 VQFN-24 CMH0819 CAP 0402 GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8

    Untitled

    Abstract: No abstract text available
    Text: TGA2700 X Band Driver Amplifier Key Features • • • • • • • • Frequency Range: 7-13 GHz 25 dB Nominal Gain 30dBm Output Power @ Pin=10dBm, Midband 12 dB Input Return Loss 10 dB Output Return Loss 0.25 um 3MI pHEMT Technology Nominal Bias 9V @ 300 mA/225 mA


    Original     		PDF TGA2700 30dBm 10dBm, A/225 300mA TGA2700 30dcern. 0007-inch

    GaAs FET amplifer

    Abstract: TGA2700 X-band GaAs pHEMT MMIC Chip
    Text: TGA2700 X Band Driver Amplifier Key Features • • • • • • • • Frequency Range: 7-13 GHz 25 dB Nominal Gain 30dBm Output Power @ Pin=10dBm, Midband 12 dB Input Return Loss 10 dB Output Return Loss 0.25 um 3MI pHEMT Technology Nominal Bias 9V @ 300 mA/225 mA


    Original     		PDF TGA2700 30dBm 10dBm, A/225 300mA TGA2700 0007-inch GaAs FET amplifer X-band GaAs pHEMT MMIC Chip

    ne72218 v58

    Abstract: NE72218-T1 NE72218-T2 C10535E NE72218 VP15-00-3
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    TGA2700-EPU

    Abstract: TGA2700 GaAs FET amplifer chip MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip
    Text: Advance Product Information November 12, 2004 X-Band Driver Amplifier TGA2700 Key Features • • • • • • • • Frequency Range: 7-13 GHz 25 dB Nominal Gain 30dBm Output Power @ Pin=10dBm, Midband 12 dB Input Return Loss 10 dB Output Return Loss


    Original     		PDF TGA2700 30dBm 10dBm, A/225 300mA TGA2700-EPU 30dBm 0007-inch TGA2700 GaAs FET amplifer chip MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip

    HMC356LP3

    Abstract: radar 77 ghz sige SC 2272 HMC373 HMC493LP3 2.5 ghz lna transistor HMC476MP86 HMC479MP86 HMC377QS16G HMC454ST89
    Text: OFF-THE-SHELF AUTUMN 2003 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE SiGe GAIN BLOCKS NOW OFFERED! INSIDE. High Linearity Low Cost “Micro-X” MMIC Amplifiers to 6 GHz * 20 NEW PRODUCTS RELEASED! Product Showcase Ultra Wideband Driver Amp HMC464


    Original     		PDF HMC464 OC-48 OC-192 ISO9001-2000 HMC356LP3 radar 77 ghz sige SC 2272 HMC373 HMC493LP3 2.5 ghz lna transistor HMC476MP86 HMC479MP86 HMC377QS16G HMC454ST89

    C band FET transistor s-parameters

    Abstract: ne3210s01 NE3210S01-T1 NE3210S01-T1B
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.


    Original     		PDF NE3210S01 NE3210S01 NE3210S01-T1 NE3210S01-T1B C band FET transistor s-parameters NE3210S01-T1 NE3210S01-T1B

    NE3210S01

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.


    Original     		PDF NE3210S01 NE3210S01 NE3210S01-T1 NE3210S01-T1B

    Untitled

    Abstract: No abstract text available
    Text: CMH0819 ? High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports ? Integrated bypass switch for LNAs CDMA ? GaAs PHEMT Process ? Leadless 3.5 x 4.5 mm. SMT package LNA ? LO Input power range: -7.0 to 0 dBm IF OUT ? Operating voltage range: 2.7 to 4 V


    Original     		PDF CMH0819 VQFN-24 142-j CMH0819

    L5 marking

    Abstract: 800 mhz Cellular amplifier circuit diagram
    Text: CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm


    Original     		PDF CMH0819 VQFN-24 142-j CMH0819 L5 marking 800 mhz Cellular amplifier circuit diagram

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


    Original     		PDF B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


    Original     		PDF Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter

    Avantek amplifier

    Abstract: Avantek amt AVANTEK transistor nomograph Avantek diode limiter AMT 4052 AWS01 Avantek apg AVANTEK solid state 290K1
    Text: AVANTEK APPLICATION NOTES A Snbddiary at HewUtt-Packard AM PLIFIERS If excessive power is applied to a transistor amplifier, the first measureable affect is almost always an increase in noise figure. A somewhat higher power will further degrade noise figure and decrease the gain of the amplifier. If the input power


    OCR Scan     		PDF 1-800-AVANTEK Avantek amplifier Avantek amt AVANTEK transistor nomograph Avantek diode limiter AMT 4052 AWS01 Avantek apg AVANTEK solid state 290K1

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643