Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GAAS DFN 2X2 Search Results

    GAAS DFN 2X2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK170V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.17 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK125V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 24 A, 0.125 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK210V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.21 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK099V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.099 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    LBEE5XV2BZ-883 Murata Manufacturing Co Ltd Shielded Small Wi-Fi® 11a/b/g/n/ac/ax 2x2 MIMO + Bluetooth® 5.2 Module - CCATS N/A(self classification) Visit Murata Manufacturing Co Ltd

    GAAS DFN 2X2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HMC536lp2e

    Abstract: HMC536LP2 2x2 dfn
    Text: HMC536LP2 / 536LP2E v00.0606 SWITCHES - SMT 8 GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6.0 GHz Typical Applications Features The HMC536LP2 / HMC536LP2E is ideal for: Input P0.1dB: +33 dBm @ +5V • Cellular/PCS/3G Infrastructure Insertion Loss: 0.6 dB • WiMAX, WiBro & Fixed Wireless


    Original     		PDF HMC536LP2 536LP2E HMC536LP2E HMC536LP2 2x2 dfn

    MMIC DFN 2x2 6

    Abstract: GaAs DFN 2x2
    Text: HMC536LP2 / 536LP2E v00.0606 GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6 GHz Typical Applications Features The HMC536LP2 / HMC536LP2E is ideal for: Input P0.1dB: +33 dBm @ +5V • Cellular/PCS/3G Infrastructure Insertion Loss: 0.6 dB • WiMAX, WiBro & Fixed Wireless


    Original     		PDF HMC536LP2 536LP2E HMC536LP2E HMC536LP2 MMIC DFN 2x2 6 GaAs DFN 2x2

    Untitled

    Abstract: No abstract text available
    Text: HMC536LP2 / 536LP2E v01.1008 GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6 GHz Typical Applications Features The HMC536LP2 / HMC536LP2E is ideal for: Input P0.1dB: +33 dBm @ +5V • Cellular/PCS/3G Infrastructure Insertion Loss: 0.6 dB • WiMAX, WiBro & Fixed Wireless


    Original     		PDF HMC536LP2 536LP2E HMC536LP2E HMC536LP2

    SPDT T/R SWITCH

    Abstract: HMC536LP2 HMC536LP2E 2x2 dfn
    Text: HMC536LP2 / 536LP2E v02.0409 Typical Applications Features The HMC536LP2 E is ideal for: Input P0.1dB: +33 dBm @ +5V • Cellular/PCS/3G Infrastructure Insertion Loss: 0.6 dB • WiMAX, WiBro & Fixed Wireless Positive Control: +3V or +5V • CATV/CMTS Isolation: 27 dB


    Original     		PDF HMC536LP2 536LP2E SPDT T/R SWITCH HMC536LP2E 2x2 dfn

    Untitled

    Abstract: No abstract text available
    Text: HMC536LP2 / 536LP2E v02.0409 Typical Applications Features The HMC536LP2 E is ideal for: Input P0.1dB: +33 dBm @ +5V • Cellular/PCS/3G Infrastructure Insertion Loss: 0.6 dB • WiMAX, WiBro & Fixed Wireless Positive Control: +3V or +5V • CATV/CMTS Isolation: 27 dB


    Original     		PDF HMC536LP2 536LP2E

    PE42480

    Abstract: No abstract text available
    Text: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding


    Original     		PDF DOC-35227-4 PE42480

    CXE2022SR

    Abstract: CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z CXE-2022Z amplifier DFN 2x2 MARKING RFMD CXE2022
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE2022SR CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z amplifier DFN 2x2 MARKING RFMD CXE2022

    CXE-2022

    Abstract: MARKING RFMD CXE-2022Z InP transistor HEMT optimum recievers 106-172 106172
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z CXE-2022 MARKING RFMD InP transistor HEMT optimum recievers 106-172 106172

    MARKING RFMD

    Abstract: CXE2022Z CXE2022SR CXE-2022Z inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z MARKING RFMD CXE2022Z CXE2022SR inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7

    Untitled

    Abstract: No abstract text available
    Text: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self


    Original     		PDF CXE-2022Z 50MHz 1000MHz 1000MHz CXE-2022Z

    hmc646lp2

    Abstract: HMC646LP2E
    Text: HMC646LP2 / 646LP2E v01.0707 Typical Applications Features The HMC646LP2 E is ideal for: High Input P0.1 dB: +46 dBm Tx • LNA Protection & T/R Switching Low Insertion Loss: 0.4 dB • TD-SCDMA / 3G Infrastructure High IIP3: +74 dBm • Satellite Subscriber Terminals


    Original     		PDF HMC646LP2 646LP2E HMC646LP2E

    Untitled

    Abstract: No abstract text available
    Text: HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Typical Applications Features The HMC646LP2 E is ideal for: High Input P0.1dB: +46 dBm Tx • LNA Protection & T/R Switching Low Insertion Loss: 0.4 dB • TD-SCDMA / 3G Infrastructure


    Original     		PDF HMC646LP2 646LP2E

    HMC646LP2

    Abstract: HMC646LP2E
    Text: HMC646LP2 / 646LP2E v01.0707 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Typical Applications Features The HMC646LP2 E is ideal for: High Input P0.1 dB: +46 dBm Tx • LNA Protection & T/R Switching Low Insertion Loss: 0.4 dB • TD-SCDMA / 3G Infrastructure


    Original     		PDF HMC646LP2 646LP2E HMC646LP2E

    HMC646LP2

    Abstract: HMC646LP2E
    Text: HMC646LP2 / 646LP2E v02.1009 GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz Typical Applications Features The HMC646LP2 E is ideal for: High Input P0.1dB: +46 dBm Tx • LNA Protection & T/R Switching Low Insertion Loss: 0.4 dB • TD-SCDMA / 3G Infrastructure


    Original     		PDF HMC646LP2 646LP2E HMC646LP2E

    HMC597LP4

    Abstract: MMIC Downconverter ku band 15 GHz power amplifier RF Demodulators HMC511LP5 amplifier DFN 2x2 gain A 12-15 GHz High Gain Amplifier transistor "RF Demodulators" SCIENTECH ELECTRONICS HMC536LP2
    Text: OCTOBER 2006 OFF-THE-SHELF New DC to Millimeterwave ICs & Modules from Hittite INSIDE. Simplifies Broadband Matching from 100 to 4000 MHz NEW PRODUCTS RELEASED! Product Showcase SMT Microwave LNA HMC564LC4 • 7 - 14 GHz Bandwidth • 1.8 dB Noise Figure


    Original     		PDF HMC564LC4 HMC597LP4 MMIC Downconverter ku band 15 GHz power amplifier RF Demodulators HMC511LP5 amplifier DFN 2x2 gain A 12-15 GHz High Gain Amplifier transistor "RF Demodulators" SCIENTECH ELECTRONICS HMC536LP2

    amplifier DFN 2x2 gain

    Abstract: No abstract text available
    Text: AP1110 2.4~2.5 GHz Power Amplifier 2004.12.21 Preliminary AP1110 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. The AP1110 is well suitable to be used for portable, low current 2.4GHz applications as well as for BT Bluetooth Class1 applications.


    Original     		PDF AP1110 AP1110 23dBm 150mA 23dBm -33dBc amplifier DFN 2x2 gain

    Untitled

    Abstract: No abstract text available
    Text: HMC1055LP2CE V00.0912 Typical Applications Features The HMC1055LP2CE is ideal for: Failsafe Operation - “On” When Unpowered • RFID & Electronic Toll Collection ETC Wide Vdd Range: 1.2V to 5V • Tags, Handsets & Portables Very Low On State Current: 200 nA


    Original     		PDF HMC1055LP2CE HMC1055LP2CE

    XL1019-DA-EV1

    Abstract: XL1016 XL1016-DA XL1019-DA
    Text: 0.5-1.6 GHz GaAs pHEMT Current Adjustable, Low Noise Amplifier L1016-DA March 2010 - Rev 23-Mar-10 Features Low Noise Figure Excellent Input Return Loss Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor 20-80 mA


    Original     		PDF L1016-DA 23-Mar-10 XL1016-DA XL1019-DA-EV1 XL1016 XL1019-DA

    HMC1055

    Abstract: No abstract text available
    Text: HMC1055LP2CE V00.0912 Typical Applications Features The HMC1055LP2CE is ideal for: Failsafe Operation - “On” When Unpowered • RFID & Electronic Toll Collection ETC Wide Vdd Range: 1.2V to 5V • Tags, Handsets & Portables Very Low On State Current: 200 nA


    Original     		PDF HMC1055LP2CE HMC1055LP2CE HMC1055

    L1019

    Abstract: XL1019-DA-EV1 XL1019-DA xl1016-da L1019-DA XL1019-DA-0G00
    Text: 1.4-4.0 GHz GaAs pHEMT Current Adjustable, Low Noise Amplifier L1019-DA March 2010 - Rev 18-Mar-10 Features Low Noise Figure Excellent input Return Loss Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor 20-80 mA


    Original     		PDF L1019-DA 18-Mar-10 XL1019-DA L1019 XL1019-DA-EV1 xl1016-da L1019-DA XL1019-DA-0G00

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    bipolar MMIC 1.9V

    Abstract: HMC476SC70E radar scheme 4x4 bit multipliers sensor radar uwb HMC543 HMC561 HMC610LP4E HMC642LC5 HMC649LP6E
    Text: AUGUST 2007 OFF-THE-SHELF New DC to Millimeterwave ICs & Modules from Hittite TRUE RMS POWER DETECTOR IS BEST-IN-CLASS INSIDE. Covers 100 MHz to 3.9 GHz with 60 to 70 dB Dynamic Range Product Showcase Low Noise Amplifier Module HMC-C045 • 1.8 - 4.2 GHz


    Original     		PDF HMC-C045 HMC561 HMC610LP4E bipolar MMIC 1.9V HMC476SC70E radar scheme 4x4 bit multipliers sensor radar uwb HMC543 HMC561 HMC642LC5 HMC649LP6E

    Untitled

    Abstract: No abstract text available
    Text: HMC667LP2 / 667LP2E v02.1110 AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz Typical Applications Features The HMC667LP2 E is ideal for: Low Noise Figure: 0.75 dB • WiMAX, WiBro & Fixed Wireless High Gain: 19 dB • SDARS & WLAN Receivers


    Original     		PDF HMC667LP2 667LP2E

    HMC667LP2

    Abstract: casea tantalum 122-40-4
    Text: HMC667LP2 / 667LP2E v01.0608 LOW NOISE AMPLIFIERS - SMT 5 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz Typical Applications Features The HMC667LP2 E is ideal for: Low Noise Figure: 0.75 dB • WiMAX, WiBro & Fixed Wireless High Gain: 19 dB • SDARS & WLAN Receivers


    Original     		PDF HMC667LP2 667LP2E casea tantalum 122-40-4