SAS 251
Abstract: AN0017 CHE1260-QAG E1260 96272-B
Text: CHE1260-QAG RoHS COMPLIANT 12-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC in SMD leadless package Description UMS E1260 YYWW The CHE1260-QAG is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detector
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CHE1260-QAG
12-27GHz
E1260
CHE1260-QAG
DSCHE1260-QAG8163
SAS 251
AN0017
E1260
96272-B
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AN0017
Abstract: CHE1270 CHE1270-QAG MO-220 DSCHE1270-QAG9222
Text: CHE1270-QAG RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC in SMD leadless package Description UMS E1270 YYWW The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications
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CHE1270-QAG
12-40GHz
E1270
CHE1270-QAG
CHE1270
12-40sult
DSCHE1270-QAG9222
AN0017
CHE1270
MO-220
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AGILENT TECHNOLOGIES 9161
Abstract: HSCH-9161 application note 979 HSMS-2850
Text: Agilent HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Features • Low junction capacitance • Lower temperature coefficient than silicon 231 9.1 Description Agilent’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified
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HSCH-9161
HSCH-9161
5988-5907EN
5988-6209EN
10E-12
10E-6
AGILENT TECHNOLOGIES 9161
application note 979
HSMS-2850
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CHE1270a98F
Abstract: No abstract text available
Text: CHE1270a RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). RF IN Matching
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CHE1270a
12-40GHz
CHE1270a
17GHz
22GHz
32GHz
12-40GHz
DSCHE1270a9222
CHE1270a98F
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CHE1260
Abstract: No abstract text available
Text: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted
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CHE1260
10-27GHz
CHE1260
10GHz
17GHz
24GHz
DSCHE12600197
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CHE1260
Abstract: Microwave detector diodes 18 GHz
Text: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted
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CHE1260
10-27GHz
CHE1260
10GHz
DSCHE1260-8163
Microwave detector diodes 18 GHz
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Untitled
Abstract: No abstract text available
Text: GEC PLES S EY DC1322/24 GaAs SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES These diodes are used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as sensitive broadband detectors at high microwave frequencies.
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DC1322/24
250mW
200mW
600mV
150pA)
-20dBm)
150pA
375GHz
-48dBm
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Untitled
Abstract: No abstract text available
Text: P ^pi GEC PLESSEY DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave
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DC1331
375GHz
150pA
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HSCH-9161
Abstract: HSMS-2850 United Detector silicon diode
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through
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HSCH-9161
HSCH-9161
5988-5907EN
5988-6209EN
March31,
HSMS-2850
United Detector silicon diode
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DIODE DATABOOK
Abstract: NJX3505
Text: NJX3505 GaAs SCHOTTKY BARRIER DIODE nGENERAL DESCRIPTION NJX3505 is a GaAs schottky barrier diode with very low terminal capacitance. It is utilized for mixer and detector up to SHF band. That adopts the ceramic package, and suited for waveguide mounting.
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NJX3505
NJX3505
DIODE DATABOOK
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"infrared led" 980 nm
Abstract: diode Sr 26
Text: NEC GaAs INFRARED LIGHT EMITTING DIODE CF3O0 FEATURES DESCRIPTION_ • The SE306 is a GaAs Gallium Arsenide Infrared LED in a plastic molded package. It is very suitable for a detector of a photointerrupter. On forward bias, it emits a spectrally narrow
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SE306
SE306
bH2752S
bS263
b427525
00bS2fl4
"infrared led" 980 nm
diode Sr 26
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Untitled
Abstract: No abstract text available
Text: P ^ p i GEC P L E S S E Y DC1335 GaAs SCHOTTKY J-BAND WAVEGUIDE DETECTOR DIODE This diode is used in detector applications requiring a better noise tigure than can be acheived with silicon diodes and as sensitive broadband detectors at high microwave frequencies.
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DC1335
200mW
100mW
600mV
150pA)
-20dBm)
150pA
-47dBm
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fototransistor
Abstract: gabellichtschranke Q62702-P5214
Text: Gabellichtschranke Slotted Interrupter SFH 9310 Wesentliche Merkmale Features • Kompaktes Gehäuse • GaAs-IR-Sendediode 950 nm • Si-Fototransistor mit Tageslichtsperrfilter • Compact type • GaAs infrared emitter (950 nm) • Silicon phototransistor detector with
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gabellichtschranke
Abstract: GPXY6010 datasheet ic 4060 Fototransistor Q62702-P5214 DSA006333 voltage detector IC
Text: Gabellichtschranke Slotted Interrupter SFH 9310 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode 950 nm • Si-Fototransistor mit Tageslichtsperrfilter Features • Compact type • GaAs infrared emitter (950 nm) • Silicon phototransistor detector with
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GPXY6010
gabellichtschranke
GPXY6010
datasheet ic 4060
Fototransistor
Q62702-P5214
DSA006333
voltage detector IC
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KBM-N56-1
Abstract: 30GHz diode 60GHz mixer 60Ghz 60GHz transistor schottky diode circuit symbol
Text: Schottky Barrier Diode GaAs KBM-N56-1 DIMENSIONS (Unit : um) KBM-N56-1 is a GaAs flip chip Schottky diode which is designed for use as mixer and detector elements at microwave and millimeterwave frequencies. The flip chip configuration is suitable for pick and place insertion.
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KBM-N56-1
KBM-N56-1
30GHz
60GHz
30GHz diode
60GHz mixer
60GHz transistor
schottky diode circuit symbol
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Untitled
Abstract: No abstract text available
Text: P^pjl G E C P L E S S E Y DC1303/12/21 GaAs SCHOTTKY X-BAND MICROSTRIP LID DETECTOR DIODES These diodes are used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as sensitive broadband detectors at high microwave
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DC1303/12/21
250mW
200mW
DC1303
DC1312
DC1321
600pV
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Untitled
Abstract: No abstract text available
Text: SMGS11 GaAs Schottky Diodes 1 1 2 2 PIN FUNCTION 1 ANODE 2 CATHODE 0503 Molded Plastic DFN Package Description Features The SMGS11 is a GaAs Schottky diode in a molded plastic DFN package. It is designed for broadband detector and single diode mixer. It is in single
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SMGS11
SMGS11
A17106
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SMGS11
Abstract: METELICS DETECTOR DIODE A 0503 Microwave detector diodes SMSG11 J-STD-20C
Text: SMGS11 GaAs Schottky Diodes 1 1 2 2 PIN FUNCTION 1 ANODE 2 CATHODE 0503 Molded Plastic DFN Package Description Features The SMGS11 is a GaAs Schottky diode in a molded plastic DFN package. It is designed for broadband detector and single diode mixer. It is in single
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SMGS11
SMGS11
A17106
METELICS DETECTOR DIODE
A 0503
Microwave detector diodes
SMSG11
J-STD-20C
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HSCH-9161
Abstract: No abstract text available
Text: Zero-Bias Beam Lead GaAs Detector Diodes Part Cj Rv Max. Number pF (kΩ) HSCH-9161 0.035 7.5 3-1 Γ (mV/µW) Functional through (GHz) Page 0.5 110 3-83
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HSCH-9161
HSCH-9161
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Untitled
Abstract: No abstract text available
Text: GEC PLES S EY S h M I C O N I> U C 1 O R S DC1314/16 GaAs SCHOTTKY J-BAND MICROSTRIP LID DETECTOR DIODES These diodes are used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as sensitive broadband detectors at high microwave
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DC1314/16
200mW
100mW
DC1314
DC1316
600mV
150pA)
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KT 804
Abstract: kt 803 SBL-121 SBL-221 SBL-801 KT 802 EN3056
Text: Ordering number:EN3056 SBL Series Beam Lead Type GaAs Schottky Barrier Diode C to Millimeter Band Mixer, Detector, Modulator Applications Features Package Dimensions • Facilitates easy mounting on MIC Microwave IC . · Less parastic components, conversion loss.
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EN3056
SBL-121,
12GHz
SBL-801
SBL-221
22GHz
KT 804
kt 803
SBL-121
SBL-221
KT 802
EN3056
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APX378
Abstract: C116
Text: APX378 GaAs BEAM LEAD SCHOTTKY R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz Low capacitance Extremely rugged Passivated planar process construction. A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used as mixer or detector in receivers of frequency
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APX378
94GHz
94GHz.
APX378)
APX378
C116
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diodes
Abstract: em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes
Text: M icro w ave S em ico nducto rs Contents PAGE Schottky Diodes Silicon Schottky Mixer Diodes . 404 Silicon Schottky Detector Diodes 408 Frequency Multiplier Diodes Silicon Step Recovery Diodes GaAs Multiplier Varactors Tuning Varactor Diodes Silicon Tuning Varactors
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426iplier
diodes
em 434
IMPATT
gunn diodes
Tuning Varactors
varactors
GUNN
Diodes high frequency
step recovery diodes
PIN diodes
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DIODE DATABOOK
Abstract: NJX3560 NJX3561
Text: NJX3560/61 SCHOTTKY BARRIER DIODE nGENERAL DESCRIPTION NJX3560/3561 is a GaAs schottky barrier diode with very low terminal capacitance. It is utilized for mixer and detector up to SHF band. It is adopted a very small surface-mount plastic package. NJX3560
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NJX3560/61
NJX3560/3561
NJX3560
NJX3561
NJX3560)
NJX3561)
DIODE DATABOOK
NJX3560
NJX3561
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