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    GA50JT06-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: GA50JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA50JT06-CAL.


    Original     		GA50JT06-CAL sic/baredie/sjt/GA50JT06-CAL GA50JT06-CAL. 03-Mar-2014 GA50JT06 00E-47 26E-28 3989E-9 026E-09 00E-3 GA50JT06-CAL SPICE high-temperature-sic-bare-die PDF

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet Normally – OFF Silicon Carbide Junction Transistor GA50JT06-CAL VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 25 mΩ 100 A 105 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch


    Original     		GA50JT06-CAL GA50JT06 00E-47 26E-28 3989E-9 026E-09 00E-3 GA50JT06-CAL PDF