GA FET MARKING 1D Search Results

GA FET MARKING 1D Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

GA FET MARKING 1D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NEC Ga FET marking L Abstract: Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET Text: AdLib OCR Evaluation MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8±0.2 00 + 1.5 1~t, c'! +1 0~ C14 U T 0~ 0.65 _+0015 Ll 2 FEATURES Lo I 3 d+ csI Marking M 6 + t L C5 1 . Sourco 2 . Ga . 3 . Drain " Directly driven by lCs; having a 5 V power supply .	Original	2SJ209 2SJ209, NEC Ga FET marking L Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET	PDF
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71	PDF
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817	PDF
MMIC SOT 343 marking CODE Abstract: on 5295 transistor MGA-52543-BLKG A004R MGA-52543 MGA-52543-TR1G MGA-52543-TR2G c2025 Text: MGA-52543 Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-52543 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA , which is designed for use in LNA and driver stages. While a capable RF/microwave amplifier for any low noise and	Original	MGA-52543 MGA-52543 5989-4192EN AV02-1271EN MMIC SOT 343 marking CODE on 5295 transistor MGA-52543-BLKG A004R MGA-52543-TR1G MGA-52543-TR2G c2025	PDF
MMIC SOT 343 marking CODE Abstract: SOT343 42 marking 53 Sot-343 on 5295 transistor Text: MGA-52543 Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-52543 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA , which is designed for use in LNA and driver stages. While a capable RF/microwave amplifier for any low noise and	Original	MGA-52543 5989-4192EN AV02-1271EN MMIC SOT 343 marking CODE SOT343 42 marking 53 Sot-343 on 5295 transistor	PDF
tl 2262 am Abstract: ATF-35143 ATF-33143 ATF-34143 ATF-35143-BLK ATF-35143-TR1 ATF-35143-TR2 ppc 8247 E 70 5059 Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-35143 Features • Low Noise Figure Surface Mount Package SOT-343 Description Agilent’s ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic	Original	ATF-35143 OT-343 ATF-35143 SC-70 OT-343) SC-70) tl 2262 am ATF-33143 ATF-34143 ATF-35143-BLK ATF-35143-TR1 ATF-35143-TR2 ppc 8247 E 70 5059	PDF
ATF-34143 Abstract: ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 marking code 5438 Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-34143 Features • Low Noise Figure Surface Mount Package SOT-343 Description Agilent’s ATF-34143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic	Original	ATF-34143 OT-343 ATF-34143 SC-70 OT-343) SC-70) ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 marking code 5438	PDF
TQFN-16L Abstract: EUP3010 EUP3010JIR1 EUP301033JIR1 3010A TDFN-6 TQFN-16 EUP3010-12JIR1 Text: EUP3010/A 1.5MHz,1A Synchronous Step-Down Converter with Soft Start DESCRIPTION FEATURES The EUP3010/A is a constant frequency, current mode, PWM step-down converter. The device integrates a main switch and a synchronous rectifier for high efficiency. The 2.5V to 5.5V input voltage range makes	Original	EUP3010/A TQFN-16L EUP3010/A st009 DS3010/A TQFN-16 EUP3010 EUP3010JIR1 EUP301033JIR1 3010A TDFN-6 TQFN-16 EUP3010-12JIR1	PDF
MARKING CODE l22 lna Abstract: No abstract text available Text: ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. • Low noise figure The ATF-331M4’s small size and low profile makes it	Original	ATF-331M4 ATF-331M4 family10 5989-4216EN AV02-3621EN MARKING CODE l22 lna	PDF
11823 die Abstract: atf-*m4 COIL 2473 l0234 HEMT marking P Text: Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Low noise figure • Excellent uniformity in product specifications • 1600 micron gate width • Miniature leadless package 1.4 mm x 1.2 mm x 0.7 mm Description	Original	ATF-331M4 5988-4993EN 5989-4216EN 11823 die atf-*m4 COIL 2473 l0234 HEMT marking P	PDF
vHF amplifier module Abstract: l0234 PHEMT marking code a FET marking code 365 n 431 transistor ATF-331M4 ATF-331M4-BLK ATF-331M4-TR1 ATF-331M4-TR2 ATF-34143 Text: ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Avago Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. Features • Low noise figure The ATF-331M4’s small size and low profile makes it	Original	ATF-331M4 ATF-331M4 5988-4993EN 5989-4216EN vHF amplifier module l0234 PHEMT marking code a FET marking code 365 n 431 transistor ATF-331M4-BLK ATF-331M4-TR1 ATF-331M4-TR2 ATF-34143	PDF
Untitled Abstract: No abstract text available Text: ATF-33143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago’s ATF-33143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic package. • Lead-free Option Available	Original	ATF-33143 SC-70 OT-343) ATF34143 5989-3747EN AV02-1442EN	PDF
A004R Abstract: ATF-33143 ATF34143 gaAsfet 10ghz Alpha 1000 GaAsFET ALPHA NEW sot YEAR DATE CODE Text: ATF-33143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago’s ATF-33143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic package. • Lead-free Option Available	Original	ATF-33143 ATF-33143 SC-70 OT-343) 450MHz 10GHz 5989-3747EN AV02-1442EN A004R ATF34143 gaAsfet 10ghz Alpha 1000 GaAsFET ALPHA NEW sot YEAR DATE CODE	PDF
MuR 826 Abstract: vx 1937 HEMT marking P 5988-9006EN ATF-551M4 Text: Agilent ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Very low noise figure and high linearity • Single Supply Enhancement Mode Technology[1] optimized for 3V operation Description Agilent Technologies’ ATF-551M4	Original	ATF-551M4 5988-9006EN 5989-4217EN MuR 826 vx 1937 HEMT marking P	PDF

ATF-551M4 Abstract: rfics marking 5 ATF-551M4-BLK ATF-551M4-TR1 ATF-551M4-TR2 PNP transistor 8555 Text: Agilent ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Very low noise figure and high linearity • Single Supply Enhancement Mode Technology[1] optimized for 3V operation Description Agilent Technologies’ ATF-551M4	Original	ATF-551M4 ATF-551M4 5988-4455EN 5988-9006EN rfics marking 5 ATF-551M4-BLK ATF-551M4-TR1 ATF-551M4-TR2 PNP transistor 8555	PDF
pHEMT FET marking A Abstract: ATF-551M4 ATF-551M4-BLK TL 2272 -L4 ATF-551M4-TR1 ATF-551M4-TR2 MuR 826 stub tuner matching Text: Agilent ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Very low noise figure and high linearity • Single Supply Enhancement Mode Technology[1] optimized for 3V operation Description Agilent Technologies’ ATF-551M4	Original	ATF-551M4 ATF-551M4 5988-4455EN pHEMT FET marking A ATF-551M4-BLK TL 2272 -L4 ATF-551M4-TR1 ATF-551M4-TR2 MuR 826 stub tuner matching	PDF
TL 2272 -L4 Abstract: diagram transistor tt 2140 ATF-551M4 Text: Agilent ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Very low noise figure and high linearity • Single Supply Enhancement Mode Technology[1] optimized for 3V operation Description Agilent Technologies’ ATF-551M4	Original	ATF-551M4 5988-9006EN 5989-4217EN TL 2272 -L4 diagram transistor tt 2140	PDF
63 1826 0441 Abstract: ATF551M4 ATF-551M4 ATF-551M4-BLK ATF-551M4-TR1 ATF-551M4-TR2 pHEMT FET marking A Text: ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package.	Original	ATF-551M4 ATF-551M4 5989-4217EN AV02-0924EN 63 1826 0441 ATF551M4 ATF-551M4-BLK ATF-551M4-TR1 ATF-551M4-TR2 pHEMT FET marking A	PDF
CFY30 Abstract: CFY 18 Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fw„ = 1.4 dB @ 4 G H z * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation	OCR Scan	CFY30 Q62703-F97 OT-143 CFY30 CFY 18	PDF
IRFZ24N equivalent Abstract: diode c329 c328 diode c328 equivalent 12014A Text: PD - 9.1501A International IQ R Rectifier IRFIZ24N HEXFET8 Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55V ^DS on = 0 . 0 7 Q	OCR Scan	IRFIZ24N O-220 C-328 C-329 IRFZ24N equivalent diode c329 c328 diode c328 equivalent 12014A	PDF
MMIC marking CODE cf Abstract: ma com 4 pin mmic A7560 Text: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V	OCR Scan	VPS05178 Q62702-F1391 Rn/50Q MMIC marking CODE cf ma com 4 pin mmic A7560	PDF
012E3 Abstract: No abstract text available Text: SIEMENS CF 750 GaAs MMIC • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz Mixer and amplifier applications in handheld equipment Low power consumption, 2mA operating current typ. Operating voltage range: 3 to 6V Ion-implanted planar structure	OCR Scan	Q62702-F1391 fl535bG5 012E3b4 Rn/50fi D1555LÃ fl235b05 fl23Sb05 012E3	PDF
U73-U74 Abstract: 14E-14 Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz	OCR Scan	NE25139 NE251 OT-143) NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 U73-U74 14E-14	PDF
ncl 071 Abstract: ncl 052 ncl 058 Text: Infineon technologies GaAs FET CFY 30 Data Sheet • Low noise {Fmin = 1.4 dB @ 4 GHz • High gain 11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation	OCR Scan	Q62703-F97 P-SOT143-4-1 Val15 ncl 071 ncl 052 ncl 058	PDF

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GA FET MARKING 1D Search Results

GA FET MARKING 1D Result Highlights (5)

GA FET MARKING 1D Datasheets Context Search

NEC Ga FET marking L

UAA 1006

marking code C1E SMD Transistor

MMIC SOT 343 marking CODE

MMIC SOT 343 marking CODE

tl 2262 am

ATF-34143

TQFN-16L

MARKING CODE l22 lna

11823 die

vHF amplifier module

Untitled

A004R

MuR 826

ATF-551M4

pHEMT FET marking A

TL 2272 -L4

63 1826 0441

CFY30

IRFZ24N equivalent

MMIC marking CODE cf

012E3

U73-U74

ncl 071