NEC Ga FET marking L
Abstract: Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET
Text: AdLib OCR Evaluation MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8±0.2 00 + 1.5 1~t, c'! +1 0~ C14 U T 0~ 0.65 _+0015 Ll 2 FEATURES Lo I 3 d+ csI Marking M 6 + t L C5 1 . Sourco 2 . Ga . 3 . Drain " Directly driven by lCs; having a 5 V power supply .
|
Original
|
PDF
|
2SJ209
2SJ209,
NEC Ga FET marking L
Ga FET marking 1D
2SJ209
TF101-D
NEC Ga FET marking A
NEC Ga FET marking z
NEC Ga FET "marking M"
NEC Ga FET
|
UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
|
Original
|
PDF
|
D-40472
I-20124
I-00139
D-30177
GB-MK14
D-81925
S-18322
F-78142
E-28007
UAA 1006
manual* cygnus sl 5000
transistor marking T79 ghz
PC1658G
NEC Ga FET marking code T79
gaas fet T79
pc1658
MC-7712
2SC5431
NEC U71
|
marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
|
Original
|
PDF
|
P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
|
MMIC SOT 343 marking CODE
Abstract: on 5295 transistor MGA-52543-BLKG A004R MGA-52543 MGA-52543-TR1G MGA-52543-TR2G c2025
Text: MGA-52543 Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-52543 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA , which is designed for use in LNA and driver stages. While a capable RF/microwave amplifier for any low noise and
|
Original
|
PDF
|
MGA-52543
MGA-52543
5989-4192EN
AV02-1271EN
MMIC SOT 343 marking CODE
on 5295 transistor
MGA-52543-BLKG
A004R
MGA-52543-TR1G
MGA-52543-TR2G
c2025
|
MMIC SOT 343 marking CODE
Abstract: SOT343 42 marking 53 Sot-343 on 5295 transistor
Text: MGA-52543 Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-52543 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA , which is designed for use in LNA and driver stages. While a capable RF/microwave amplifier for any low noise and
|
Original
|
PDF
|
MGA-52543
5989-4192EN
AV02-1271EN
MMIC SOT 343 marking CODE
SOT343 42
marking 53 Sot-343
on 5295 transistor
|
tl 2262 am
Abstract: ATF-35143 ATF-33143 ATF-34143 ATF-35143-BLK ATF-35143-TR1 ATF-35143-TR2 ppc 8247 E 70 5059
Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-35143 Features • Low Noise Figure Surface Mount Package SOT-343 Description Agilent’s ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic
|
Original
|
PDF
|
ATF-35143
OT-343
ATF-35143
SC-70
OT-343)
SC-70)
tl 2262 am
ATF-33143
ATF-34143
ATF-35143-BLK
ATF-35143-TR1
ATF-35143-TR2
ppc 8247
E 70 5059
|
ATF-34143
Abstract: ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 marking code 5438
Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-34143 Features • Low Noise Figure Surface Mount Package SOT-343 Description Agilent’s ATF-34143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic
|
Original
|
PDF
|
ATF-34143
OT-343
ATF-34143
SC-70
OT-343)
SC-70)
ATF-34143-BLK
ATF-34143-TR1
ATF-34143-TR2
marking code 5438
|
TQFN-16L
Abstract: EUP3010 EUP3010JIR1 EUP301033JIR1 3010A TDFN-6 TQFN-16 EUP3010-12JIR1
Text: EUP3010/A 1.5MHz,1A Synchronous Step-Down Converter with Soft Start DESCRIPTION FEATURES The EUP3010/A is a constant frequency, current mode, PWM step-down converter. The device integrates a main switch and a synchronous rectifier for high efficiency. The 2.5V to 5.5V input voltage range makes
|
Original
|
PDF
|
EUP3010/A
TQFN-16L
EUP3010/A
st009
DS3010/A
TQFN-16
EUP3010
EUP3010JIR1
EUP301033JIR1
3010A
TDFN-6
TQFN-16
EUP3010-12JIR1
|
MARKING CODE l22 lna
Abstract: No abstract text available
Text: ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. • Low noise figure The ATF-331M4’s small size and low profile makes it
|
Original
|
PDF
|
ATF-331M4
ATF-331M4
family10
5989-4216EN
AV02-3621EN
MARKING CODE l22 lna
|
11823 die
Abstract: atf-*m4 COIL 2473 l0234 HEMT marking P
Text: Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Low noise figure • Excellent uniformity in product specifications • 1600 micron gate width • Miniature leadless package 1.4 mm x 1.2 mm x 0.7 mm Description
|
Original
|
PDF
|
ATF-331M4
5988-4993EN
5989-4216EN
11823 die
atf-*m4
COIL 2473
l0234
HEMT marking P
|
vHF amplifier module
Abstract: l0234 PHEMT marking code a FET marking code 365 n 431 transistor ATF-331M4 ATF-331M4-BLK ATF-331M4-TR1 ATF-331M4-TR2 ATF-34143
Text: ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Avago Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. Features • Low noise figure The ATF-331M4’s small size and low profile makes it
|
Original
|
PDF
|
ATF-331M4
ATF-331M4
5988-4993EN
5989-4216EN
vHF amplifier module
l0234
PHEMT marking code a
FET marking code 365
n 431 transistor
ATF-331M4-BLK
ATF-331M4-TR1
ATF-331M4-TR2
ATF-34143
|
Untitled
Abstract: No abstract text available
Text: ATF-33143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago’s ATF-33143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic package. • Lead-free Option Available
|
Original
|
PDF
|
ATF-33143
SC-70
OT-343)
ATF34143
5989-3747EN
AV02-1442EN
|
A004R
Abstract: ATF-33143 ATF34143 gaAsfet 10ghz Alpha 1000 GaAsFET ALPHA NEW sot YEAR DATE CODE
Text: ATF-33143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago’s ATF-33143 is a high dynamic range, low noise PHEMT housed in a 4-lead SC-70 SOT-343 surface mount plastic package. • Lead-free Option Available
|
Original
|
PDF
|
ATF-33143
ATF-33143
SC-70
OT-343)
450MHz
10GHz
5989-3747EN
AV02-1442EN
A004R
ATF34143
gaAsfet 10ghz
Alpha 1000 GaAsFET
ALPHA NEW sot YEAR DATE CODE
|
MuR 826
Abstract: vx 1937 HEMT marking P 5988-9006EN ATF-551M4
Text: Agilent ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Very low noise figure and high linearity • Single Supply Enhancement Mode Technology[1] optimized for 3V operation Description Agilent Technologies’ ATF-551M4
|
Original
|
PDF
|
ATF-551M4
5988-9006EN
5989-4217EN
MuR 826
vx 1937
HEMT marking P
|
|
|
ATF-551M4
Abstract: rfics marking 5 ATF-551M4-BLK ATF-551M4-TR1 ATF-551M4-TR2 PNP transistor 8555
Text: Agilent ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Very low noise figure and high linearity • Single Supply Enhancement Mode Technology[1] optimized for 3V operation Description Agilent Technologies’ ATF-551M4
|
Original
|
PDF
|
ATF-551M4
ATF-551M4
5988-4455EN
5988-9006EN
rfics marking 5
ATF-551M4-BLK
ATF-551M4-TR1
ATF-551M4-TR2
PNP transistor 8555
|
pHEMT FET marking A
Abstract: ATF-551M4 ATF-551M4-BLK TL 2272 -L4 ATF-551M4-TR1 ATF-551M4-TR2 MuR 826 stub tuner matching
Text: Agilent ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Very low noise figure and high linearity • Single Supply Enhancement Mode Technology[1] optimized for 3V operation Description Agilent Technologies’ ATF-551M4
|
Original
|
PDF
|
ATF-551M4
ATF-551M4
5988-4455EN
pHEMT FET marking A
ATF-551M4-BLK
TL 2272 -L4
ATF-551M4-TR1
ATF-551M4-TR2
MuR 826
stub tuner matching
|
TL 2272 -L4
Abstract: diagram transistor tt 2140 ATF-551M4
Text: Agilent ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Very low noise figure and high linearity • Single Supply Enhancement Mode Technology[1] optimized for 3V operation Description Agilent Technologies’ ATF-551M4
|
Original
|
PDF
|
ATF-551M4
5988-9006EN
5989-4217EN
TL 2272 -L4
diagram transistor tt 2140
|
63 1826 0441
Abstract: ATF551M4 ATF-551M4 ATF-551M4-BLK ATF-551M4-TR1 ATF-551M4-TR2 pHEMT FET marking A
Text: ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package.
|
Original
|
PDF
|
ATF-551M4
ATF-551M4
5989-4217EN
AV02-0924EN
63 1826 0441
ATF551M4
ATF-551M4-BLK
ATF-551M4-TR1
ATF-551M4-TR2
pHEMT FET marking A
|
CFY30
Abstract: CFY 18
Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fw„ = 1.4 dB @ 4 G H z * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation
|
OCR Scan
|
PDF
|
CFY30
Q62703-F97
OT-143
CFY30
CFY 18
|
IRFZ24N equivalent
Abstract: diode c329 c328 diode c328 equivalent 12014A
Text: PD - 9.1501A International IQ R Rectifier IRFIZ24N HEXFET8 Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55V ^DS on = 0 . 0 7 Q
|
OCR Scan
|
PDF
|
IRFIZ24N
O-220
C-328
C-329
IRFZ24N equivalent
diode c329
c328 diode
c328 equivalent
12014A
|
MMIC marking CODE cf
Abstract: ma com 4 pin mmic A7560
Text: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V
|
OCR Scan
|
PDF
|
VPS05178
Q62702-F1391
Rn/50Q
MMIC marking CODE cf
ma com 4 pin mmic
A7560
|
012E3
Abstract: No abstract text available
Text: SIEMENS CF 750 GaAs MMIC • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz Mixer and amplifier applications in handheld equipment Low power consumption, 2mA operating current typ. Operating voltage range: 3 to 6V Ion-implanted planar structure
|
OCR Scan
|
PDF
|
Q62702-F1391
fl535bG5
012E3b4
Rn/50fi
D1555LÃ
fl235b05
fl23Sb05
012E3
|
U73-U74
Abstract: 14E-14
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz
|
OCR Scan
|
PDF
|
NE25139
NE251
OT-143)
NE25139-T1
NE25139U71
NE25139T1U71
NE25139U72
NE25139T1U72
NE25139U73
U73-U74
14E-14
|
ncl 071
Abstract: ncl 052 ncl 058
Text: Infineon technologies GaAs FET CFY 30 Data Sheet • Low noise {Fmin = 1.4 dB @ 4 GHz • High gain 11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation
|
OCR Scan
|
PDF
|
Q62703-F97
P-SOT143-4-1
Val15
ncl 071
ncl 052
ncl 058
|
