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    GA 25 DIODE Search Results

    GA 25 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GA 25 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKM 800 GA 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF DAT\datbl\B06-igbt\800ga176d

    Untitled

    Abstract: No abstract text available
    Text: SKM 400 GA 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    W001

    Abstract: No abstract text available
    Text: SKM 800 GA 126 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 800 GA 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    *semibox

    Abstract: No abstract text available
    Text: SKM 500 GA 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 800 GA 176 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 800 GA 126 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF

    RR3020

    Abstract: ga128d
    Text: SKM 500 GA 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF

    ga128d

    Abstract: No abstract text available
    Text: SKM 400 GA 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C


    Original     		PDF T\datbl\B06-ig bt\400 ga128d ga128d

    m500

    Abstract: Semikron SKM
    Text: SKM 500 GA 174 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC; ICN ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. 4) IEC 60721-3-3


    Original     		PDF 3K7/IE32 m500 Semikron SKM

    Untitled

    Abstract: No abstract text available
    Text: SKM 600 GA 124 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 60068-1


    Original     		PDF 3K7/IE32

    Untitled

    Abstract: No abstract text available
    Text: 1N8035-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF 1N8035-GA Mil-PRF-19500 1N8035 46E-17 00E-05 26E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8033-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF 1N8033-GA Mil-PRF-19500 1N8033 99E-17 87E-05 38E-10 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8031-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF 1N8031-GA Mil-PRF-19500 1N8031 57E-18 40E-05 12E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03

    Untitled

    Abstract: No abstract text available
    Text: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		PDF 2N7638-GA 2N7638 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7638-GA

    Untitled

    Abstract: No abstract text available
    Text: 1N8032-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8032-GA Mil-PRF-19500 1N8032 99E-17 87E-05 38E-10 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8034-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8034-GA Mil-PRF-19500 1N8034 46E-17 00E-05 26E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original     		PDF 2N7640-GA 2N7640 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 2N7640-GA

    Untitled

    Abstract: No abstract text available
    Text: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250°C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8024-GA Mil-PRF-19500 1N8024 88E-18 90E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8028-GA Mil-PRF-19500 1N8028 74E-13 68E-5 15E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8026-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8026-GA Mil-PRF-19500 1N8026 45E-15 00E-10 00E-03

    D73 -Y

    Abstract: skm 75 gb 101 d skm 100 gb 101 d skm 50 gb 100 d semikron skm 300 gar 123 SKM 22 GD 101 D SKM 40 GD 101 D skm 40 gb 123 d SKM 300 CIRCUIT cemi data
    Text: 5EMIKRDN Section 6: SEMITRANS IGBT Modules; New Range 1996 3rd Version: Low Inductance, lower Vc e m . soft and fast CAL diodes11 41 Type 2 VcES 2) lc = 25 °C 0 Teas« = V 1200 SKM 300 GA 123 D 1200 SKM 300 GA 173 D 1700 SKM 400 G A 123 D 5) 1200 SKM 400 G A 173 D 5> 1700


    OCR Scan     		PDF

    SGDJ02

    Abstract: SGD102 X817
    Text: fo rd e rin g number: EN 5581 _ SGD102 GaÀs Schottky Barrier Diode C to X Band, Mixer, Modulator Applications Features • Ultrasmall-sized package. • Less parasitic componénts, conversion loss. Absolute Maximum Ratings atTa = 25°C Peak Reverse Voltage


    OCR Scan     		PDF EN5581 SGD102 SGDJ02 SGD102 X817