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    AM28F256

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current


    OCR Scan     		PDF GD30bSS Am28F256 32-pin -32-pin Am28F256-95C4JC Am28F256-95C3JC

    Untitled

    Abstract: No abstract text available
    Text: ADV MI CRO MEMORY 4ÛE D n 05S7S5Ô QQaGSbS t> • AMD4 T—4 6 —1 3 -2 5 Am27X128 Advanced Micro Devices 16,384 X 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed


    OCR Scan     		PDF 05S7S5Ã Am27X128 KS000010 0205-005A

    AM27C040

    Abstract: IE728 AM27C040-155 micro memory AM27C040-150DC
    Text: ADV MI CR O □ 5 5 7 5 2 Ö D G 3 D S D D 0 • AMD4 MÖE D MEMORY T - 4 6 - 1 3 -2 9 Am27C040 H Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ ■ Fast access time 100% Fiashrite programming - 90 ns


    OCR Scan     		PDF T-46-13-29 Am27C040 28-pin 32-pin G25752Ã 14971-006B Altl27C040 IE728 AM27C040-155 micro memory AM27C040-150DC

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO b4E MEMORY D • G2S752Ö DOBElìb 574 ■ in Advanced Micro Devices Am27X020 2 Megabit (262,144 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ±10% power supply tolerance ■ High noise immunity ■ Low power dissipation


    OCR Scan     		PDF G2S752Ã Am27X020 KS000010 15652B-9

    Untitled

    Abstract: No abstract text available
    Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance Latch-up protected to 100 mA from -1 V to Vcc +1 V — 70 ns maximum access time Flasherase Electrical Bulk Chip-Erase


    OCR Scan     		PDF Am28F256 32-pin Am28F256-75 025752fl DD32b01

    MAE A1470

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 3ÖE 0 • Ü5S7S2Ö ODSTMSÖ 0 ■ A MD 4 '-* 4 6 -1 2 -2 ? Advanced Micro Devices Am27C256 32,768 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tlme-S5 ns ■ JEDEC-approved pinout ■ Low power consumption: -100 nA maximum standby current


    OCR Scan     		PDF Am27C256 128K-bit, 003Q2bL> MAE A1470

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY T> m b4E 02S752Ö D Q 3 2 2 1 4 31T • AMD4 a Advanced Micro Devices Am27X040 4 Megabit (524,288 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ±10% power supply tolerance ■ As an OTP EPROM alternative: ■ High noise immunity


    OCR Scan     		PDF 02S752Ã Am27X040 KS000010 15654B-9

    AM27C256

    Abstract: AM27C256-55 AM27C256-70 AMD 27C256 255
    Text: ADV MI CRO ME MOR Y 3 ÖE 0 • Ü5S7S2Ö ODSTMSÖ 0 ■ AMD4 '- * 4 6 - 1 2 - 2 ? Advanced Micro Devices Am27C256 32,768 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ ■ ■ Fast access tlme-S5 ns Low power consumption: -100 nA maximum standby current


    OCR Scan     		PDF Am27C256 ttme-55 128K-b 02S752Ã 003Q2bb AM27C256-55 AM27C256-70 AMD 27C256 255