Marking G2
Abstract: BF599
Text: SEMICONDUCTOR BF599 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking G2 No. 1 Item Marking Device Mark G2 BF599 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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BF599
OT-23
Marking G2
BF599
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high speed Zener Diode
Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors
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Untitled
Abstract: No abstract text available
Text: MMO 62 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 54 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 62-12io6 MMO 62-16io6 K2/A1 G2 G2 K1/A2 Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module
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OT-227
62-12io6
62-16io6
MMO62
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MMO90
Abstract: 90-12io6 IXYS MMO90
Text: MMO 90 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 90 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 90-12io6 MMO 90-16io6 K2/A1 G2 G2 K1/A2 Test Conditions Maximum Ratings IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module
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OT-227
90-12io6
90-16io6
MMO90
MMO90
90-12io6
IXYS MMO90
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Untitled
Abstract: No abstract text available
Text: MMO 74 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 74 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 74-12io6 MMO 74-16io6 K2/A1 G2 G2 K1/A2 Symbol Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module
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OT-227
74-12io6
74-16io6
MMO74
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9012IO
Abstract: No abstract text available
Text: MMO 90 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 90 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 90-12io6 MMO 90-16io6 K2/A1 G2 G2 K1/A2 Test Conditions Maximum Ratings IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module
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OT-227
90-12io6
90-16io6
MMO90
9012IO
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IGD 001
Abstract: No abstract text available
Text: MMO 62 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 54 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 62-12io6 MMO 62-16io6 K2/A1 G2 G2 K1/A2 Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module
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OT-227
62-12io6
62-16io6
MMO62
IGD 001
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UV 471
Abstract: intel embedded microcontroller handbook XA-G2 XA-G3 XA-G37 80C51 XA User Guide
Text: INTEGRATED CIRCUITS XA-G1, XA-G2, XA-G3 XA 16-bit microcontroller family 32K–8K/512 OTP/ROM/ROMless, watchdog, 2 UARTs Product specification Supersedes data of 1998 Feb 25 Replaces data sheets XA-G1 and XA-G2 of 1997 Mar 25 IC25 Data Handbook Philips Semiconductors
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16-bit
8K/512
UV 471
intel embedded microcontroller handbook
XA-G2
XA-G3
XA-G37
80C51
XA User Guide
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mosfet 4800
Abstract: 4800 mosfet sot-363 n-channel mosfet sot-363 p-channel mosfet MOSFET P SOT-23 sot-23 P-Channel MOSFET Complementary MOSFETs 2N7002 BSS84 BSS8402DW
Text: New Product Announcement May 2003 Introducing New Complementary Pair MOSFETs in SOT-363 Package: BSS8402DW A D2 G1 SOT-363 S1 B C S2 G2 D1 G H K M J D D2 G1 L F S1 Q1 Q2 S2 G2 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80
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OT-363
BSS8402DW
OT-363
2N7002
BSS84
mosfet 4800
4800 mosfet
sot-363 n-channel mosfet
sot-363 p-channel mosfet
MOSFET P SOT-23
sot-23 P-Channel MOSFET
Complementary MOSFETs
BSS8402DW
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1012S
Abstract: Q62702-F1627 BF1012S
Text: BF 1012S Silicon N-Channel MOSFET Tetrode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs 1=S Q62702-F1627 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol
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1012S
Q62702-F1627
OT-143
Jul-29-1996
1012S
Q62702-F1627
BF1012S
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Untitled
Abstract: No abstract text available
Text: AP2626GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 Simple Drive Requirement BVDSS S1 D1 Smaller Outline Package RDS ON G2 Surface mount package SOT-26 RoHS compliant 30V 72m ID S2 3.3A G1 Description
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AP2626GY
OT-26
OT-26
100ms
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Untitled
Abstract: No abstract text available
Text: AP2626GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Simple Drive Requirement S1 D1 ▼ Smaller Outline Package G2 ▼ Surface mount package SOT-26 ▼ RoHS compliant BVDSS 30V RDS ON 72mΩ ID S2
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AP2626GY
OT-26
OT-26
100us
100ms
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ISS306
Abstract: No abstract text available
Text: AP1430GEU6-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET S2 ▼ Simple Gate Drive G2 D1 ▼ Small Package Outline D2 ▼ Embedded Protection Diode G1 ▼ RoHS Compliant & Halogen Free SOT-363 S1 BVDSS 60V
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AP1430GEU6-HF
OT-363
230mA
OT-363
ISS306
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Untitled
Abstract: No abstract text available
Text: AP1430GEU6-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET S2 Simple Gate Drive BVDSS G2 D1 Small Package Outline D2 G1 Embedded Protection Diode RoHS Compliant & Halogen Free SOT-363 S1 60V RDS ON 2.5 ID 230mA
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AP1430GEU6-HF
OT-363
230mA
OT-363
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Untitled
Abstract: No abstract text available
Text: AP2626GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Simple Drive Requirement S1 D1 ▼ Smaller Outline Package G2 ▼ Surface mount package SOT-26 ▼ RoHS compliant BVDSS 30V RDS ON 72mΩ ID S2
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AP2626GY
OT-26
OT-26
100us
100ms
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AP2531GY-HF-3TR
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2531GY-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance N-CH D2 S1 Fast Switching Performance D1 RoHS-compliant, halogen-free G2 P-CH S2 SOT-26 Y G1 Description
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AP2531GY-HF-3
OT-26
AP2531GY-HF-3
OT-26
12REF
37REF
90REF
20REF
AP2531GY-HF-3TR
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Untitled
Abstract: No abstract text available
Text: AP2626GY-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Simple Drive Requirement S1 D1 ▼ Smaller Outline Package G2 ▼ Surface mount package ▼ RoHS Compliant & Halogen-Free SOT-26 BVDSS 30V RDS ON
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AP2626GY-HF
OT-26
OT-26
100us
100ms
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AP2626GY
Abstract: No abstract text available
Text: AP2626GY Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Simple Drive Requirement S1 D1 ▼ Smaller Outline Package G2 ▼ Surface mount package 30V RDS ON 72mΩ ID S2 SOT-26 ▼ RoHS compliant BVDSS
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AP2626GY
OT-26
OT-26
100ms
AP2626GY
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2530GY-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Low Gate Charge Low On-resistance N-CH D2 S1 Fast Switching Performance D1 RoHS-compliant, halogen-free G2 P-CH S2 SOT-26 Y G1 Description BV DSS
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AP2530GY-HF-3
OT-26
AP2530GY-HF-3
OT-26
12REF
37REF
90REF
20REF
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Untitled
Abstract: No abstract text available
Text: Temic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • • High power gain Low noise figure 1 R iJ— E3T 2 9+9280 BF799 Marking: G2 Plastic case SOT 23
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OCR Scan
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BF799
BF799
500MHz
00127H4
DD12725
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Untitled
Abstract: No abstract text available
Text: AP2533GY-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS S1 Fast Switching Performance RDS ON D1 Surface Mount Package 150m ID G2 RoHS Compliant & Halogen-Free SOT-26 16V
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AP2533GY-HF
OT-26
OT-26
100ms
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Untitled
Abstract: No abstract text available
Text: AP2530AGY-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS S1 Fast Switching Performance RDS ON D1 Surface Mount Package 72m ID G2 RoHS Compliant & Halogen-Free SOT-26 30V
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AP2530AGY-HF
OT-26
OT-26
100us
100ms
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2533GY-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate Charge N-CH D2 BV DSS S1 Fast Switching Performance D1 RoHS-compliant, halogen-free G2 P-CH S2 SOT-26 Y G1 Description
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AP2533GY-HF-3
OT-26
AP2533GY-HF-3
OT-26
12REF
37REF
90REF
20REF
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Untitled
Abstract: No abstract text available
Text: AP2625GY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Low Gate Charge S1 D1 ▼ Capable of 2.5V Gate Drive G2 ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free SOT-26 S2 BVDSS -30V RDS ON
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AP2625GY-HF
OT-26
OT-26
100us
100ms
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