G12 TRANSISTOR Search Results

G12 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

G12 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G12-l Abstract: LSI Logic ASIC g12 High Voltage G12L g12 transistor G12 000 Text: G12 ASIC Cell-Based Product Features/ Benefits Twelfth Generation ASIC Technology • ASIC technology with 0.18 micron L-drawn Overview LSI Logic’s G12 ASIC Cell-Based product, with its three digital libraries, offers unprecedented options for system ASIC designers to optimize their ASIC or	Original	18-micron 13-micron B20023 G12-l LSI Logic ASIC g12 High Voltage G12L g12 transistor G12 000	PDF
Untitled Abstract: No abstract text available Text: V23990-P690-G12-PM target datasheet flowCON 2 1200V/150A Features Flow 2 housing ● Input rectifier with brake ● With flowPACK 2 up to 30 kW inverters ● Press-fir pins for easy assembly Target Applications Schematic ● Motor Drive ● Power Generation	Original	V23990-P690-G12-PM 200V/150A	PDF
TSA874 Abstract: No abstract text available Text: TSA874 PNP Silicon Planar High Voltage Transistor SOT-223 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -500V BVCEO -500V IC -150mA VCE SAT Ordering Information Features ● ● -0.5V @ IC / IB = -50mA / -10mA Low Saturation Voltages	Original	TSA874 OT-223 -500V -150mA -50mA -10mA -50mA TSA874CW TSA874	PDF
AN5337 ca3028 Abstract: ca3028a AN5337 CA3028B trw rf transistor ca3028 trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22 Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges Application Note Introduction The CA3028A and CA3028B integrated circuits are singlestage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The	Original	CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22	PDF
HCFT Abstract: LQ12D011 DH758 D1021 D1022 D1023 D1024 DC AC inverter Text: LQ12D011 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 11.8" The SHARP LQ12D011 Color TFT-LCD module is a color active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD	Original	LQ12D011 LQ12D011 HCFT DH758 D1021 D1022 D1023 D1024 DC AC inverter	PDF
LQ10DX01 Abstract: tcl tv D1024 transistor 11-G02 D1021 D1022 D1023 DF9B-15P-1V DF9B-15S-1V DF9B-21P-1V Text: LQ10DX01 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 10.4" The SHARP LQ10DX01 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,	Original	LQ10DX01 LQ10DX01 tcl tv D1024 transistor 11-G02 D1021 D1022 D1023 DF9B-15P-1V DF9B-15S-1V DF9B-21P-1V	PDF
g21 Transistor Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor Text: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	S9018 1100MHz OT-23 MRA151 MRA153 g21 Transistor transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor	PDF
Y22 SOT23 Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor	Original	PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11	PDF
transistor C110 Abstract: Transistor No C110 GLV12-54 led receiver H160 GLV12 TRANSISTOR Y 330 Text: Photoelectric Sensors GLV12 Series • Light on/dark on mode determined by wiring • Adjustable sensitivity • Visible light source for easy alignment Diffused Mode Retro-Reflective Mode See page 596 See page 597 Features: • Fast 0.7ms response time • Quick-disconnect or cabled versions	Original	GLV12 200mm BF5-30 transistor C110 Transistor No C110 GLV12-54 led receiver H160 TRANSISTOR Y 330	PDF
CA3054 Abstract: cascode transistor array CA3054M CA3054M96 Text: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential	Original	CA3054 120MHz CA3054 300MHz. 120MHz. cascode transistor array CA3054M CA3054M96	PDF
CA3054M96 Abstract: double channel double balanced demodulators CA3054 CA3054M MS8002 Text: CA3054 S E M I C O N D U C T O R Dual Independent Differential Amp for Low Power Applications from DC to 120MHz November 1996 Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential amplifiers with associated constant current transistors on a	Original	CA3054 120MHz CA3054 300MHz. 120MHz. 1-800-4-HARRIS CA3054M96 double channel double balanced demodulators CA3054M MS8002	PDF
Untitled Abstract: No abstract text available Text: TS5204 150mA Low Noise LDO Voltage Regulator SOT-23 Pin Definition: 1. Output 2. Input 3. Ground SOT-89 Pin Definition: 1. Output 2. Ground 3. Input DFN 2x2 Pin Definition: 1. Out 2. N/C 3. Ground 4. N/C 5. N/C 6. Input General Description The TS5204 series is an efficient linear voltage regulator with ultra low noise output, very low dropout voltage	Original	TS5204 150mA OT-23 OT-89 TS5204 500mV 600uA 100mA)	PDF
Untitled Abstract: No abstract text available Text: TS5204 150mA Low Noise LDO Voltage Regulator SOT-23 Pin Definition: 1. Output 2. Input 3. Ground SOT-89 Pin Definition: 1. Output 2. Ground 3. Input DFN 2x2 Pin Definition: 1. Out 2. N/C 3. Ground 4. N/C 5. N/C 6. Input General Description The TS5204 series is an efficient linear voltage regulator with ultra low noise output, very low dropout voltage	Original	TS5204 150mA OT-23 OT-89 TS5204 500mV 600uA 100mA)	PDF
smd transistor marking G12 Abstract: SMD Transistor g12 smd diode marking G12 G12 SMD SOT23 smd marking g12 marking g12 2SK1399 Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1399 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance 0.55 Not necessary to consider driving current because of it is high input +0.1 1.3-0.1 +0.1 2.4-0.1 Can be driven by a 3.0-V power source 0.4	Original	2SK1399 OT-23 smd transistor marking G12 SMD Transistor g12 smd diode marking G12 G12 SMD SOT23 smd marking g12 marking g12 2SK1399	PDF

ztx614 Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727 Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80	OCR Scan	2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 ztx614 2n6718 2N6724 2N6725	PDF
BC337b Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 Text: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector	OCR Scan	2N3262 T0-39 T0-18 ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC337b bc327b 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88	PDF
ZTX458 Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391 Text: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO	OCR Scan	ZTX658 ZTX758 ZTX458 ZTX558 ZTX6575 ZTX757 MPSA425 MPSA92 BF393 BF493 BF493 BF392 MPSA92 ZTX558 ZTX757 ZTX758 2N5401 BF391	PDF
BC337B Abstract: BFS98 ZTX338 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551 ZTX552 ZTX553 Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.	OCR Scan	1000mW ZTX4555 ZTX555 ZTX454 ZTX554 ZTX453S ZTX553 ZTX452 ZTX552 MPSA06 BC337B BFS98 ZTX338 ZTX451 ZTX551 ZTX552 ZTX553	PDF
bc327b Abstract: bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88	PDF
BF493 Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554 Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.	OCR Scan	1000mW ZTX4555 ZTX555 ZTX454 ZTX554 ZTX453S ZTX553 ZTX452 ZTX552 MPSA06 BF493 ZTX338 ZTX451 ZTX551 ZTX552 ZTX553 ZTX554	PDF
2N1893 Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92 Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92	PDF
BCY56 Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91	PDF
m 60 n 03 g10 Abstract: No abstract text available Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60	OCR Scan	7057fl 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 m 60 n 03 g10	PDF
BSY55 Abstract: m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88 Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BSY55 m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88	PDF

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G12 TRANSISTOR Search Results

G12 TRANSISTOR Result Highlights (5)

G12 TRANSISTOR Datasheets Context Search

G12-l

Untitled

TSA874

AN5337 ca3028

HCFT

LQ10DX01

g21 Transistor

Y22 SOT23

transistor C110

CA3054

CA3054M96

Untitled

Untitled

smd transistor marking G12

ztx614

BC337b

ZTX458

BC337B

bc327b

BF493

2N1893

BCY56

m 60 n 03 g10

BSY55