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    G11Z Price and Stock

    PEPPERL+FUCHS GmbH VBA-4E4A-G11-ZAJ-EA2L-F

    AS INTERFACE SEN/ACT MODULE
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    DigiKey VBA-4E4A-G11-ZAJ-EA2L-F Box 3 1
    • 1 $417.42
    • 10 $323.686
    • 100 $417.42
    • 1000 $417.42
    • 10000 $417.42
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    Fischer Elektronik GmbH & Co KG BLM-LG-1-1-Z

    suitable for male header SLM and
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    DigiKey BLM-LG-1-1-Z Bulk 10
    • 1 -
    • 10 $0.14
    • 100 $0.14
    • 1000 $0.14
    • 10000 $0.14
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    Telemechanique Sensors XCKD6945G11ZH

    SWITCH LIMIT DPST 3A 50V
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    DigiKey XCKD6945G11ZH Box 1
    • 1 $258.34
    • 10 $258.34
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    Mouser Electronics XCKD6945G11ZH
    • 1 $190.96
    • 10 $180.04
    • 100 $158.24
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    RS XCKD6945G11ZH Bulk 7 Weeks 1
    • 1 $303.02
    • 10 $303.02
    • 100 $303.02
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    • 10000 $303.02
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    TE Connectivity D38999-21HG11ZC

    D38999/21HG11ZC
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    DigiKey D38999-21HG11ZC Bulk 50
    • 1 -
    • 10 -
    • 100 $471.822
    • 1000 $471.822
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    JRH Electronics D38999-21HG11ZC

    D38999/21HG11ZC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey D38999-21HG11ZC 1
    • 1 $8592.25
    • 10 $5106.509
    • 100 $5106.509
    • 1000 $5106.509
    • 10000 $5106.509
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    G11Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet p321

    Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS


    Original     		PDF AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t

    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		PDF AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing

    mosfet p321

    Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		PDF AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A