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    Text: J nixY S IXTH14N100 VDSS MegaMOS FET D25 RDS on N -C h a n n e l = 1000 V = 14 A = 0.82 Q E n h a n c e m e n t M o d e m Symbol Test Conditions v T j = 25 °C to 150°C 1000 V v DGR ^ 1000 V VGS Continuous ±20 V v T ransient +30 V DSS GSM Maximum Ratings


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    IXTH14N100 O-247 G0G4G23 PDF