MA733
Abstract: diode marking Gc marking GC diode 103 capacitor
Text: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE 2 Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- ue pl d in an c se ed lud
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MA111
MA733
MA733
diode marking Gc
marking GC diode
103 capacitor
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SBD52
Abstract: No abstract text available
Text: SBD52C05L01 DESCRIPTION Brightking's the SBD52 series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors(MLVs) in portable applications such as cell phones,notebook computers,and PDAs.They offer superior electrical characteristics such as lower clamping voltage and no device degradation
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SBD52C05L01
SBD52
IEC61000-4-2
OD-523
00GS/s
21-Oct-11
OD-523
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SBD52
Abstract: No abstract text available
Text: SBD52C05L01 DESCRIPTION Brightking's the SBD52 series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors(MLVs) in portable applications such as cell phones,notebook computers,and PDAs.They offer superior electrical characteristics such as lower clamping voltage and no device degradation
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SBD52C05L01
SBD52
IEC61000-4-2
OD-523
21-Dec-11
OD-523
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SBD835L
Abstract: No abstract text available
Text: SBD835L ADVANCE INFORMATION 8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Very Low Forward Voltage Drop
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SBD835L
MIL-STD-202,
DS30202
SBD835L
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SBD835L
Abstract: No abstract text available
Text: SBD835L ADVANCE INFORMATION 8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Very Low Forward Voltage Drop
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SBD835L
MIL-STD-202,
DS30202
SBD835L
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Untitled
Abstract: No abstract text available
Text: SBD835L ADVANCE INFORMATION 8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Very Low Forward Voltage Drop
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SBD835L
MIL-STD-202,
DS30202
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SBD835L
Abstract: SBG11100
Text: SBD835L ADVANCE INFORMATION 8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Very Low Forward Voltage Drop
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SBD835L
MIL-STD-202,
DS30202
SBD835L
SBG11100
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SBD1035CT
Abstract: SBG11100 JEDEC to 243
Text: SBD1035CT ADVANCE INFORMATION 10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Very Low Forward Voltage Drop
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SBD1035CT
MIL-STD-202,
DS30211
SBD1035CT
SBG11100
JEDEC to 243
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Schottky diode high reverse voltage
Abstract: diodes ir IR 50 MARKING 103 transistor marking N1
Text: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm For high speed switching For small current rectification 0.020±0.010 2 0.80±0.05 3 • Features M Di ain sc te on na tin nc ue e/ d 0.60±0.05 1.00±0.05 0.20±0.03 4 3 0.30±0.03
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MA4L784
SKH00101AED
Schottky diode high reverse voltage
diodes ir
IR 50
MARKING 103
transistor marking N1
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features M Di ain sc te on na tin nc ue e/ d 0.60±0.05 1.00±0.05 0.20±0.03 4 ■ Absolute Maximum Ratings Ta = 25°C
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MA4L728
1008-type
SKH00100AED
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1640CT
Abstract: 1645CT SBD1630CT SBD1645CT 1635CT to252aadpak S1630T-S1645T
Text: MOSPEC SBD1630CT thru SBD1645CT SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE SCHOTTKY BARRIER RECTIFIERS The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have
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SBD1630CT
SBD1645CT
O-251
1640CT
1645CT
SBD1645CT
1635CT
to252aadpak
S1630T-S1645T
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Untitled
Abstract: No abstract text available
Text: MOSPEC SBD2030CT thru SBD2045CT SWITCH MODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE SCHOTTKY BARRIER RECTIFIERS The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have
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SBD2030CT
SBD2045CT
O-251
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SmD TRANSISTOR a77
Abstract: smd marking code SSs
Text: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138
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BSS138
OT-23
Q67000-S566
Q67000-S216
E6327
E6433
fopu22
S35bQ5
Q133777
SQT-89
SmD TRANSISTOR a77
smd marking code SSs
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Untitled
Abstract: No abstract text available
Text: SA0YO Smal 1-Si gnal H i g h - V o l t a g e S c h o t t k y B a r r i r Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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SB007W03Q
SB007W03C
SB02W03C
B07W03P
SB20W03P
SB007
SB02I
44-fiJ
MT950123TR
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FRQS20A045
Abstract: UL94V-01
Text: SBD Anode common 20A 45V Tjw150V Fully Molded similar to TO-22QAB FRQS20A045 tttiS Nihon Inter Electronics Corporation Specification '> 3 '7 h y r yj Construction Schottky Barrier Diode Application High Frequency Rectification • k MAXIMUM RATINGS Ta = 25°C Unless otherwise specified
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45VTjw150V
O-22QAB
FRQS20A045
FRQS20Ar
UL94V-01ggpÂ
UL94V-0
UL94V-01
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1ss37
Abstract: No abstract text available
Text: smm Small-Signal High-Voltage Schottky Barri r Di odes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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1SS345
1SS358
1SS350
1SS351
1SS355
1SS356
1SS375
VR-10V
7T03Q,
7T03C,
1ss37
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SBD1630CT
Abstract: SBD1645CT S1630 S1630T-S1645T
Text: ¿Z&MOSPEC SBD1630CT thru SBD1645CT SWITCHMODE POWER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features:
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SBD1630CT
SBD1645CT
O-251
S1630T-S1645T
SBD1645CT
S1630
S1630T-S1645T
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Untitled
Abstract: No abstract text available
Text: # y —h'=¡^y SBD 8 A 6 5 V Tjw1 5 0 V Fully Molded similar to TO-22QAB Cathode common F C H S 0 8 A 0 6 5 t t s * Nihon Inter Electronics Corporation Specification. i/a y V mm Construction f flìÉ Application 3r— K y Schottky B arrier Diode itiT O S iifE ffl
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65VTjw150V
TQ-220AB
FCHS08A065
FCHS08A065
20mVRMs
100kHz
FCHS08Ar
UL94V-0
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SB07
Abstract: sb10-05pcp
Text: SAßYO Small-Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes CS B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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O-126
T0-126ML
SB01-05Q
SB01-05CPCA)
SB05-05P
SB10-05PCP
SB20-05P
SB01-05SPA
SB05-05NP
SB20-05T
SB07
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Untitled
Abstract: No abstract text available
Text: ¿SSmS!enmSMdcrZmil\ „ mh Sbdw M i or In part. for m m faotura ar M h a im f i v ttaa t a d im l Oanorattoa r t M It prior aanoart, A ttat m light la pentad to dM aaa ar to uaa a % InlormeBoa In ttfc ap— w t_ to r 6,00+0.25 n n
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09nim(
F-2246mm(
09pos.
09poe.
L17H3ZZ0134
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SB01-05QCA
Abstract: No abstract text available
Text: SA0O S m a l l - S i g n a l H i g h - V o l t a g e S c h o t t k y Barr ier Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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MT991116TR
SB01-05QCA
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Untitled
Abstract: No abstract text available
Text: O rdering number : EN 5052 No.5052 FX802 ¡I_ TR : P N P Epitaxial P lan a r Silicon T ransistor SBD : Schottky B arrier Diode Twin Type •Cathode Common SA\YO, DC-DC Converter F eatures - Complex type of a low saturation voltage, high speed switching and large c u rre n t P N P transistor and
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FX802
FX802
2SB1302
SB20W03P,
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sb30
Abstract: si120
Text: Smal ¡“Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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T0-126
T0-126ML
MT980707TR
sb30
si120
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN 4552 SANYO No.4552 ¡I_ FP106 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter Applications F eatu res • Complex type with a PNP transistor and a Schottky barier diode in one package, facilitating highdensity mounting.
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FP106
FP106
2SA1898
SB10-015C.
250mm2X
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