FXM2IC102
Abstract: FXM2IC102L8X JESD22-A114
Text: FXM2IC102 Dual Supply 2-Bit I2C Interface Voltage Translator with Configurable Voltage Supplies and Signal Levels and Auto-Direction Sensing Features General Description • Bi-directional interface between any two levels from The FXM2IC102 is a configurable dual-voltage-supply
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FXM2IC102
FXM2IC102
400pF
FXM2IC102L8X
JESD22-A114
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FXM2IC102
Abstract: FXM2IC102L8X JESD22-A114 J-STD-020B MAC08A
Text: FXM2IC102 Dual Supply 2-Bit I2C Interface Voltage Translator with Configurable Voltage Supplies and Signal Levels and Auto Direction Sensing Features General Description • Bi-directional interface between any two levels from The FXM2IC102 is a configurable dual-voltage-supply
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FXM2IC102
FXM2IC102
400pF
FXM2IC102L8X
JESD22-A114
J-STD-020B
MAC08A
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PDF
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FXM2IC102
Abstract: FXM2IC102L8X JESD22-A114
Text: FXM2IC102 2-Bit I2C Bus Interface Voltage Translator / Repeater Features Description Bi-Directional Interface between any Two Levels from 1.65V to 5.5V Auto-Direction Sensing, Direction Control not Needed The FXM2IC102 is a configurable dual-voltage-supply
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FXM2IC102
400pF
FXM2IC102
FXM2IC102L8X
JESD22-A114
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Untitled
Abstract: No abstract text available
Text: FXMA2104 Dual-Supply, 4-Bit Voltage Translator / Buffer / Repeater / Isolator for Open-Drain Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V • Direction Control not Needed The FXMA2104 is a 4-bit high-performance,
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FXMA2104
FXMA2104
400pF
175mV
150ision.
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Untitled
Abstract: No abstract text available
Text: FXMAR2104 Dual-Supply, 4-Bit Voltage Translator / Isolator for Open-Drain and Push-Pull Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V • Direction Control Not Needed The FXMAR2104 is a 4-bit high-performance,
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FXMAR2104
175mV
150mV,
FXMAR2104
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Untitled
Abstract: No abstract text available
Text: FXMAR2104 Dual-Supply, 4-Bit Voltage Translator / Isolator for Open-Drain and Push-Pull Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V • Direction Control Not Needed The FXMAR2104 is a 4-bit high-performance,
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Original
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FXMAR2104
175mV
150mV,
FXMAR2104
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PDF
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Untitled
Abstract: No abstract text available
Text: FXMA2104 Dual-Supply, 4-Bit Voltage Translator / Buffer / Repeater / Isolator for Open-Drain Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V • Direction Control not Needed The FXMA2104 is a 4-bit high-performance,
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Original
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FXMA2104
400pF
175mV
150mV,
FXMA2104
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fxma2104
Abstract: No abstract text available
Text: FXMA2104 Dual-Supply, 4-Bit Voltage Translator / Buffer / Repeater / Isolator for Open-Drain Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V • Direction Control not Needed The FXMA2104 is a 4-bit high-performance,
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Original
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FXMA2104
400pF
175mV
150mV,
FXMA2104
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PDF
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Untitled
Abstract: No abstract text available
Text: FXMAR2104 Dual-Supply, 4-Bit Voltage Translator / Isolator for Open-Drain and Push-Pull Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V • Direction Control Not Needed The FXMAR2104 is a 4-bit high-performance,
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Original
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FXMAR2104
FXMAR2104
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FXMAR2102
Abstract: No abstract text available
Text: FXMAR2102 Dual-Supply, 2-Bit Voltage Translator / Isolator for I2C Applications Features Description • Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V • No Direction Control Needed The FXMAR2102 is a high-performance configurable
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FXMAR2102
175mV
150mV,
FXMAR2102
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NDL5531P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS <¿30 fxm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm.
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NDL5531P
300nm,
550nm,
SM-9/125)
NDL5531P
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Astrotec
Abstract: No abstract text available
Text: m i c r o e l e c t r o n i c s gr oup Data Sheet September 1996 Lucent Technologies Bell Labs Innovations 270F-Type ASTROTEC 1.3 fxm Multifrequency MQW Analog Laser Module Benefits • High output power allows for longer system spans, more fiber splits, and greater tolerance of fiber and
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270F-Type
DS96-173LWP
DS95-166LWP)
Astrotec
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dlop 06
Abstract: fxm diode
Text: Infrared Laser Diode DL-LS39_ DL-LS39 is a 50mW laser diode with a small and lightweight package. It has small astigmatism and high reliability. DL-LS39 is suitable for recordable optical disc systems such as mini-disc players, recordable compact disc players and other
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DL-LS39_
DL-LS39
Opera30
dlop 06
fxm diode
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T4105E
Abstract: fxm diode T4105 SLD204
Text: SONY CORP/COMPONENT PROPS IflE D • 0302353 00GS0Ö5 □ SLD204V SONY, T-41-05 High Power Laser Diode D e scrip tio n The SLD204V is an index-guided high-power laser diode fabricated by MOCVD. P ackage O u tlin e Unit: mm S tru c tu re GaAIAs double-hetero laser diode.
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00GS0
SLD204V
SLD204V
T-41-05
00liC4l
PC092
T4105E
fxm diode
T4105
SLD204
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4VQ03CT
Abstract: 4VQ03CTF 4VQ04CT 4VQ04CTF FT28
Text: FEATUR ES • TO-251AA Case o 4VQ03CT 4VQ04CT 4VQ03CTF 4VQ04CTF 4 . 4A / 30 — 40 V SCHOTTKY BARRIER DIODE 2.3SMAX .094 2.38MAX (.094) TO-252AA Case, Surface Mount Device 16-221245) 0.9Í.035) NOM INAL 5.98(.235) i_ ° Dual Diodes - Cathode Common 1.5 MAX
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4VQ03CT
4VQ04CT
4VQ03CTF
4VQ04CTF
O-251AA
O-252AA
4VQ03CT
4VQ03CTF
4VQ04CTF
FT28
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PDF
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Untitled
Abstract: No abstract text available
Text: HL6312/13G AIGalnP Laser Diodes Description The H L6312/13G are 0.63 ¿im band A IG alnP laser diodes w ith a m ulti-quantum w ell M Q W structure. W avelength is equal to H e-N e G as laser. T hey are suitable as light sources in b ar code readers . laser
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HL6312/13G
HL6312G/HL6313G
HL6312/13G:
HL6312G
HL6313G
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLN208 TOSHIBA LED LAMP GaAM s INFRARED EMITTER TLN208 O O Light source for auto focus • Optical radiation of current confining LED chip is condensed by Infrared light emission diode for still camera U nit in mm TOLERANCE ± 0 .2 m m a resin lens.
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TLN208
685sr.
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FLD130C2
Abstract: FLD130C2BN FLD130
Text: InGaAsP/lnP LASER DIODE MODULE n I H FEATURES • B it rate c a p a b ility to 150 Mb/s • Stable operation over a w ide tem perature range • Low operating and threshold cu rre n t • H erm etically sealed 14 pin dual-in-line package w ith m o n ito r p ho to d io d e and coupled to single mode fib e r
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FLD130C2BN
374ci75b
FLD130C2
FLD130
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TLR114A
Abstract: TLR120A
Text: TOSHIBA 7. [3 ] Explanations LED Lamps 7.1 LED Lamp Characteristics In commercially available LED lamps, the maximum ratings are specified as in standard semiconductor devices. These maximum ratings are param eter values that m ust never be exceeded. If two parameters are at their maximum values
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EPITAXX
Abstract: ETX505Q large area quadrant photodiode ETX100TL-ST ingaas LED epitaxx quadrant ETX1000T InGaAs Epitaxx linear T05 Package ETX300
Text: EPITAXX INC EHE D 33bG40b QGGGQbB =1 r -^ - o i Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,
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33bG40b
EDL1300RFC
R1300
ETX75FJ-SLR
ETX75FC
-45dB
-55dB
EPITAXX
ETX505Q
large area quadrant photodiode
ETX100TL-ST
ingaas LED
epitaxx quadrant
ETX1000T
InGaAs Epitaxx linear
T05 Package
ETX300
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60N03
Abstract: 60N035
Text: KF17117A-5 6 0 N 0 3 5 N -Channel Field Effect Transistor Preliminary June 2001 General Description These n-channel power field effect transistors are produced using high cell density D M O S technology. These devices are particularly suited for low voltage applications such as automotive and other battery
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KF17117A-5
60N035)
O-220
60N03
60N035
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DIODE m7 dic
Abstract: M54801P
Text: M IT S U B IS H I B IP O L A R D IGITA L IC s M54801P F M D IV E R S IT Y R E C E IV E R C O N TR O LLE R DESCRIPTION The M 54801P is a n l2L s e m ic o n d u c to r in te g r a te d PIN CONFIGURATION TOP VIEW c irc u it o o n s is tin g o f an F M d iv e r s ity r e c e iv e r c o n tro lle r d e v e lo p e d
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M54801P
M54801P
DIODE m7 dic
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FLD130F2KP
Abstract: FLD130 10 gb laser diode 1310 nm
Text: InGaAsP/lnP FEATURES • Wavelength : 1.3 nm • Fast pulse response : tr, tf = 100 psec. • Optical isolation . 30 dB • Fiber output power : 2.5 mW • Hermetically sealed SIP ceramic package • Built-in optical isolator, ternary PIN-PD, thermistor and
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FLD130F2KP
11-pin,
FLD130
10 gb laser diode 1310 nm
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lf7a
Abstract: No abstract text available
Text: b3E • 0015245 tiE M T fiE ? M IT S U B IS H I DGTL 0 T 4 ■ f 1I T 3 M I T S U B , S H I B IP O LAR D IGITAL ICs M54801P L O G IC F M D IV E R S IT Y R E C E IV E R C O N T R O L L E R DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 548Q 1P is an l2L sem iconductor in teg ra te d circuit
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M54801P
lf7a
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