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    Untitled

    Abstract: No abstract text available
    Text: May 1990 FUjlTSU IPRODUCT PROFILE: MB85230 -80L/-10L/-12L CMOS 1M X 8 LOW POWER DRAM MODULE The Fujitsu MB85230 is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB81C1000 devices. The MB85230 is optimized for those applications requiring high speed, high performance and


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    MB85230 -80L/-10L/-12L MB81C1000 MB85230 30-pad MB85230-80L) PDF

    Untitled

    Abstract: No abstract text available
    Text: Septem ber 1992 Edition 1.0 FUjlTSU DATA S H E E T MB85346A-60/-70/-80 CMOS 1 M X 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module The Fujitsu MB85346A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A


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    MB85346A-60/-70/-80 MB85346A MB814400A MB81C1000A 72-pad MSS-72P-P11 PDF

    MB3736

    Abstract: amplifier 15w
    Text: T '1 H ~ 0 S '£ > \ FUJITSU MICROELECTRONICS 31E » 374=i7ba 0015Ö07 S • F M I October 1989 Edition 1.0 FUjlTSU DATASHEET• MB3736 15W BTL AUDIO AMPLIFIER 15W BTL AUDIO AMPLIFIER WITH INTERNAL STAND BY FUNCTION The Fujitsu MB3736 is designed or a low-frequency high-power amplifier with internal


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    MB3736 MB3736 ZIP-12P-M01) 12-LEAD ZI2002S-1C amplifier 15w PDF

    FT1551

    Abstract: FT2551
    Text: FU JIT SU M I C R O E L E C T R O N I C S 31E D E3 D 0 1 b b l 2 b E3 FMI r-*s- r January 1990 Edition 1.1 FUjlTSU PRODUCT PROFILE - FT2551 Silicon High Speed Power Transistor DESCRIPTION T h e F T 2 5 5 1 is a silicon PNP general purpose, m edium pow er transistor fabricated


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    FT2551 FT2551 FT1551, FT1551 PDF

    MB88346

    Abstract: DIP-20P-M02 MB88200 MB88500 tv suffix fujitsu 80 PINS mb8850 MB88341 *88346
    Text: Ju ly 1990 E dition 1.0 DATA SHEET FUjlTSU MB88346 R-2R TYPE 8-BIT D/A CONVERTER WITH OPERATIONAL AMPLIFIER OUTPUT BUFFERS DESCRIPTION M B 88346-P The Fujitsu M B88346 is an R -2 R type 8 -b it resolution d ig ita l-to -a n a lo g converter DAC , designed for interface with a w ide range of general 4 -b it and 8 -b it


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    MB88346 MB88346 MB88200 MB8850 MB88500 12-channel DIP-20P-M02 tv suffix fujitsu 80 PINS MB88341 *88346 PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1990 FUjlTSU PRODUCT PROFILE MB85421-40/50 CMOS STATIC RAM MODULE 262144 Words X 9 -Bit The Fujitsu MB85421 is a fully decoded, C M O S static random access memory module with nine M B 81C 8 1A devices mounted on a 70-pin Epoxy module. A separate S E L E C T pin provides parity capability. Additionally,


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    MB85421-40/50 MB85421 70-pin 70-Lead ZP-70P-P01) PDF

    MB87078

    Abstract: No abstract text available
    Text: July 1990 Edition 2.0 FUjlTSU DATA SHEET MB87078 ELECTRIC VOLUME 6-BIT 4-CHANNEL ELECTRIC VOLUME The Fujitsu MB87078 is a 6-bit 4-channel electric volume. Gain is controlled from 0 dB to -32 dB every 0.5 dB steps by digital signal input. The MB87O70 is fabricated in CMOS technology, it achieves low power consumption. Digital


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    MB87078 MB87078 MB87O70 24-pin 24-LEAD DIP-24P-M03) D24017S-3C PDF

    Untitled

    Abstract: No abstract text available
    Text: October 1989 Edition 1.0 FUjlTSU DATASHEET'- MB81C68A -4 S -W CMOS 16K-BIT HIGH SPEED SRAM 4096 WORDS x 4 BITS SRAM WITH HIGH SPEED AND AUTOMATIC POWER DOWN The Fujitsu MB81C68A-W is 4096 words x 4 bits static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be


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    81C68A 16K-BIT MB81C68A-W 500mV MB81C68A-45-W C68Ar-45-W 20-LEAD DIP-20C-C03) 020006S-4C PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1990 FujlTSU PRODUCT PROFILE • MB85411-30/40 CMOS STATIC RAM MODULE 65536 Words x 9-Bit The Fujitsu MB85411 is a fully decoded, CMOS static random access p W memory module SRAM with nine MB81C71A devices mounted on a 70-pin Epoxy module. A separate SELECT pin provides parity capability.


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    MB85411-30/40 MB85411 MB81C71A 70-pin MB85411-30/-40 60-Lead MZP-70P-P01) PDF

    c4547

    Abstract: MB85410
    Text: November 1989 Edition 1.0 FUjlTSU DATA SHEET : MB85420-40/-50 256K X 8 CMOS SRAM MODULE CMOS 262,144 WORDS x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85420 is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 60-pin plastic board.


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    MB85420-40/-50 MB85420 MB81C81A 60-pin MB81C81A, MB85420-40) B85420-50) MB85240-40) MB8542last c4547 MB85410 PDF

    FT1551

    Abstract: FT2551
    Text: FUJITSU MICROELECTRONICS 31E D E3 D01bbl2 b E3FMI r-*s- r January 1990 Edition 1.1 FUjlTSU PRODUCT PROFILE - FT2551 Silicon High Speed Power Transistor DESCRIPTION T h e F T 2 5 5 1 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T ) technology. R E T devices are


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    FT2551 FT1551, FT1551 PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1992 Edition 1.0 FUjlTSU DATA SHEET • MB81410OA-60/-70/-80 CMOS 4M X 1 BIT FAST PAGE MODE DRAM CMOS 4,194,304 x 1 bit Fast Page Mode Dynamic RAM The Fujitsu MB814100A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,304 memory cells in a x1 configuration. The MB814100A features a fa s t page* mode of


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    MB81410OA-60/-70/-80 MB814100A 048-bits B814100A MB814100A MB814100A-60 MB814100A-70 MB814100A-80 26-LEAD PDF

    transistor H6C

    Abstract: CG10492 cg10572 code r4k transistor r3n FPT-70P-M QFP-196 lu1414 LU18 LCC-64C-A01
    Text: FUjlTSU M ay 1990 Edition 1.0 P R O D U C T P R O FILE CG10 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG10 series of 0.8-micron CMOS gate arrays is a highly integrated low-power, ultra high-speed product family that derives its enhanced performance and increased user flexibility from the use of a system-proven, dual-column gate structure and 2-layer


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    208-LE transistor H6C CG10492 cg10572 code r4k transistor r3n FPT-70P-M QFP-196 lu1414 LU18 LCC-64C-A01 PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1993 Edition 2.0 FUjlTSU DATA SHEET M B S 8 1 3 2 1 0 1-60/-70/-80 CMOS 32M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 33,554,432 x 1 BIT Nibble Mode Dynamic RAM Fujitsu MBS8132101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 33,554,432 memory cells in a x1 configuration. MBS8132101 DRAM has 2 chips of 16M DRAM


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    MBS8132101 096-bits JV0006-933J2 PDF

    MB84256

    Abstract: No abstract text available
    Text: May 1990 Edition 1.0 DATA SHEET FUjlTSU MB98901RC CMOS Static Random Access Memory Card The MB98901 is a memory card with one MB84256 SRAM, organized as 32,768 words x 8 bits, and a replaceable lithium battery in a 38-pin plastic package. This card has TTL-compatible input/output and a 3-state output level with full static operation. It


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    MB98901RC MB98901 MB84256 38-pin 370length PDF

    Untitled

    Abstract: No abstract text available
    Text: November 1989 Edition 1.0 FUjlTSU DATA SHEET MB40968/40968V 2-CHANNEL 8-BIT D/A CONVERTER 2-CHANNEL 8-BIT D/A CONVERTER The Fujitsu MB40968/40968V is a 2-channel 8-bit high speed digital to analog converter for video frequency band fabricated by Fujitsu Advanced Bipolar Technology This is suitable for


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    MB40968/40968V MB40968/40968V 30MHz MB40968: MB40968V: D28012S-3C MB40968 MB40968V T-28P-M F28005S-4C PDF

    FPT-100P-M01

    Abstract: mcl m01 94 MB82VP036
    Text: February 1994 Edition 1.0 ADVANCE INFO. FUjlTSU DATASHEET MB82VP036 CMOS 32K x 36 SYNCHRONOUS SRAM CMOS 32768 WORDS BY 36-BIT SYNCHRONOUS STATIC RANDOM ACCESS MEMORY The Fujitsu MB82VP036 is a 1M bit CMOS Synchronous Static Random Access Memory SSRAM containing 1,179,648 memory cells accessible in a 36-bit


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    MB82VP036 36-BIT MB82VP036 QDDL057 FPT-100P-M01 mcl m01 94 PDF

    MB81C78A

    Abstract: MB81C78A-35 MB81C78A-45
    Text: Aprì! 1990 Edition 3.0 FUjlTSU DATA S H E E T MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory fabricated with a CMOS process. The memory uses asynchronous circuitry and may


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    MB81C78A-35/-45 64K-BIT MB81C78A 32-PAD LCC-32C-A02) MB81C78A-35 MB81C78A-45 PDF

    C0807

    Abstract: No abstract text available
    Text: / FUJITSU LTD S3E T> Lp V 3 •j 7 374T7St. 0 G 0 2 4 b 3 T7b » F C A J January 1991 Edition 1.0 FUjlTSU DATASHEET: MB71C256-25/-35 PROGRAMMABLE BICMOS 262 ,144-BIT READ ONL Y MEMORY B IC M O S 262,144 BIT D EAP PRO M 32,768 W O R D x 8 BITS The Fujitsu MB71C256 is high speed BICMOS TTL electrically lield programmable


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    374T7St. MB71C256-25/-35 144-BIT MB71C256 C0807 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS04-21314-1E FUjlTSU DATA SHEET MB1519 ASSP DUAL SERIAL INPUT PLL FREQUENCY SYNTHESIZER DUAL SERIAL INPUT PLL FREQUENCY SYNTHESIZER WITH 600MHz PRESCALER The Fujitsu MB1519 is a 600MHz dual serial input PLL Phase Locked frequency synthesizer designed for cellular telephone and cordless telephone applications.


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    DS04-21314-1E MB1519 600MHz DIP-20P-M02 PDF

    MB87001A

    Abstract: MB501 prescaler MB87001 50mhz crystal oscillator DIP MB501L FPT-16P-M06 CMOS 7-bit programmable counter
    Text: FUjlTSU Sept. 1995 Edition 8.0a DATA SHEET MB87001A CMOS PLL FREQUENCY SYNTHESIZER CMOS SERIAL INPUT PHASE-LOCKED-LOOP PLL FREQUENCY SYNTHESIZER The Fujitsu MB87001A, fabricated in CMOS technology, is a serial input PLL frequency synthesizer. The MB87001A contains an inverter for connection to an external oscillator, a programmable


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    MB87001A MB87001A, MB87001A 17-bit 10-bit 16-LE FPT-16P-M06) MB501 prescaler MB87001 50mhz crystal oscillator DIP MB501L FPT-16P-M06 CMOS 7-bit programmable counter PDF

    mb87006

    Abstract: MB87006A MB505-16 902A4
    Text: FUjlTSU Sept. 1995 Edition 4.0a DATA SHEET MB505-16 ULTRA HIGH FREQUENCY PRESCALER ULTRA HIGH FREQUENCY PRESCALER T h e Fujitsu M B 505 is a high frequency, up to 1.6GHz, prescaler used with a frequency synthesizer to form a Pha se Locked Loop PLL . It will divide the input


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    MB505-16 MB505 PV0051-902A4 mb87006 MB87006A MB505-16 902A4 PDF

    2SC3046

    Abstract: transistor ITT
    Text: January 1990 Edithn 1.1 FUjlTSU PRODUCT PROFILE 2SC3046 Silicon High Speed Power Transistor DESCRIPTION The 2SC3046 is a silicon NPN planar general purpose, high power switching tran­ sistor fabricated with Fujitsu's unique Ring Em itter Transistor {R E T technology.


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    2SC3046 2SC3046 transistor ITT PDF

    Untitled

    Abstract: No abstract text available
    Text: cP DS04-21338-1E . '' ' DATA SHEET - ASSP IF Band PLL Frequency Synthesizer MB15S02 • DESCRIPTION The Fujitsu MB15S02 is an exclusive Intermediate Frequency IF band Phase Locked Loop (PLL) frequency syn­


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    DS04-21338-1E MB15S02 MB15S02 MB15A16 37MT7Sb MB15S02PFV T-8P-M03) PDF