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    FUJITSU QUANTUM DEVICES Search Results

    FUJITSU QUANTUM DEVICES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    FUJITSU QUANTUM DEVICES Datasheets Context Search

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    zigbee wifi coexistence

    Abstract: mobi telecom 802.16e wimax chip 3G HSDPA SoC, Network on Chip, telecom WiMAX wireless technology 430M WiMAX baseband
    Text: WiMAX – Promise of Quantum Leap in Broadband Wireless Communications Business Model Considerations George Wu Director of Marketing Technology Solutions and ASSP Fujitsu Microelectronics America, Inc. WCA 2005 – June 29 – July 1, 2005 1 Quantum Leaping to 2010


    Original     		PDF 29-July zigbee wifi coexistence mobi telecom 802.16e wimax chip 3G HSDPA SoC, Network on Chip, telecom WiMAX wireless technology 430M WiMAX baseband

    zigbee wifi coexistence

    Abstract: 430M 802.16e wimax chip
    Text: WiMAX – Promise of Quantum Leap in Broadband Wireless Communications Business Model Considerations George Wu Director of Marketing Technology Solutions and ASSP Fujitsu Microelectronics America, Inc. International Technology Association of America ITAA Luncheon Presentation – June 29, 2005


    Original     		PDF

    FMM5048GJ

    Abstract: No abstract text available
    Text: FMM5522GJ 3W FMM5048GJ (4W) New products Power Amplifier MMIC Models for 14 GHz-band VSAT FMM5522GJ(3W) / FMM5048GJ(4W) FUJITSU QUANTUM DEVICES LIMITED has developed a pair of power amplifiers (3W and 4W) for 14 GHz-band VSAT. The higher output, reduced size, and lower prices of these new models make


    Original     		PDF FMM5522GJ FMM5048GJ FMM5522GJ FMM5048GJ 14GHz-band FMM5522GJ) FMM5048GJ)

    FLD3F7CZ

    Abstract: fld3f Fujitsu Quantum Devices
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 発光素子シリーズ Optical Laser Module series 高出力CATV 高出力CATV レーザ High Power CATV LD Modules FLD3F7CZ-K series 新製品 NEW PRODUCTS


    Original     		PDF 12dBm14dBm 112ch) 212dBm 14dBm Order3-5880 FLD3F7CZ fld3f Fujitsu Quantum Devices

    Fujitsu Quantum Devices

    Abstract: Fujitsu laser fujitsu optical module 0426 Quantum Devices
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 発光素子シリーズ Optical Laser Module series 10Gbit/s 直接変調アンクールド レーザ 1310nm 10Gbit/s Uncooled DM-DFB LD Modules FLD3F23GE


    Original     		PDF 10Gbit/s 1310nm 10Gbit/s FLD3F23GE 11310nm Fujitsu Quantum Devices Fujitsu laser fujitsu optical module 0426 Quantum Devices

    Fujitsu Quantum Devices

    Abstract: Quantum Devices rosa 5PIN
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ Optical Receiver Module series 2.5Gbit/s APDプリアンプレシーバ APDプリアンプレシーバ 2.5Gbit/s ROSA APD Preamp Receiver Modules


    Original     		PDF FRM5W232FY 1550nm Fujitsu Quantum Devices Quantum Devices rosa 5PIN

    Fujitsu Quantum Devices

    Abstract: Quantum Devices
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ Optical Receiver Module series 2.5Gbit/s PINプリアンプレシーバ PINプリアンプレシーバ 2.5Gbit/s Coaxial PIN Preamp Receiver Modules


    Original     		PDF FRM3Z232HZ/HY/LY 1550nm Lim3-5880 Fujitsu Quantum Devices Quantum Devices

    BER10-10

    Abstract: No abstract text available
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ Optical Receiver Module series 2.5Gbit/s PINプリアンプレシーバ PINプリアンプレシーバ 2.5Gbit/s ROSA PIN Preamp Receiver Modules


    Original     		PDF FRM3Z232FY BER10-10

    termistor

    Abstract: Fujitsu Quantum Devices Quantum Devices
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 発光素子シリーズ Optical Laser Module series 変調器内蔵DFB 変調器内蔵DFB レーザ 1550 nm 10 Gbit/s MI-DFB LD Modules FLD5F20NP-G 新製品 NEW


    Original     		PDF FLD5F20NP-G 95328Gbit43-5880 termistor Fujitsu Quantum Devices Quantum Devices

    FLD5F

    Abstract: Fujitsu Quantum Devices Quantum Devices
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ SC-ROSA “FS” Optical Receiver Module series 10Gbit Gbit/s 10 Gbit /s PINプリアンプレシーバ PINプリアンプレシーバ


    Original     		PDF 10Gbit/s FRM5J141HW/FZ/FS 10Gbit/s 1550nm Conditions3-5880 FLD5F Fujitsu Quantum Devices Quantum Devices

    APD 1550nm

    Abstract: FRM5N142GW 1310nm APD Receiver Fujitsu Quantum Devices
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ Optical Receiver Module series 10Gbit Gbit/s 10 Gbit /s APDプリアンプレシーバ APDプリアンプレシーバ 10Gbit/s SFF APD Preamp Receiver Modules


    Original     		PDF 10Gbit/s FRM5N142GW 10Gbit/s 1550nm M3-5882 APD 1550nm FRM5N142GW 1310nm APD Receiver Fujitsu Quantum Devices

    FRM5J141G

    Abstract: Fujitsu Quantum Devices Quantum Devices
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ Optical Receiver Module series 10Gbit Gbit/s 10 Gbit /s PINプリアンプレシーバ PINプリアンプレシーバ 10Gbit/s SFF PIN Preamp Receiver Modules


    Original     		PDF 10Gbit/s FRM5J142GW 10Gbit/s 1550nm Max0426 FRM5J141G Fujitsu Quantum Devices Quantum Devices

    BER10-10

    Abstract: Fujitsu Quantum Devices Quantum Devices
    Text: 富士通カンタムデバイス FUJITSU QUANTUM DEVICES LIMITED 最新情報 LATEST NEWS 光半導体 受光素子シリーズ Optical Receiver Module series 2.5Gbit/s PINプリアンプレシーバ PINプリアンプレシーバ BS-A 2.5Gbit/s Mini-DIL PIN Preamp Receiver Modules


    Original     		PDF FRM3Z232BS/BS-A 1550nm BER10-10 Fujitsu Quantum Devices Quantum Devices

    LK 1628

    Abstract: FLD3C5KM Fujitsu laser FLD3C5KM LK laser rise time
    Text: 1,310nm MQW-FP Coaxial Laser FLD3C5KM/LK KM FEATURES • • • • • • Bit rate capability to 622 Mb/s -40~+85°C operating temperature range Low operating and threshold current Laser-welding assembly method Long life and high reliability 0.2mW, and 1.6mW output devices are available


    Original     		PDF 310nm FCSI0302M200 LK 1628 FLD3C5KM Fujitsu laser FLD3C5KM LK laser rise time

    fujitsu optical module

    Abstract: 10 gb laser diode Fujitsu laser 24KM K3270 FLD3F10
    Text: 1,310nm MQW-DFB Modulator Integrated Laser FLD3F10NP-A FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection


    Original     		PDF 310nm FLD3F10NP-A 10Gb/s. FCSI0402M200 fujitsu optical module 10 gb laser diode Fujitsu laser 24KM K3270 FLD3F10

    electroabsorption modulator quantum well

    Abstract: 10 gb laser diode 10ghz optical modulator mqw-dfb optical modulator semiconductor PIN photodiode 5ghz PIN photodiode ps
    Text: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP-C FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection


    Original     		PDF 550nm FLD5F20NP-C 10Gb/s. FCSI0202M200 electroabsorption modulator quantum well 10 gb laser diode 10ghz optical modulator mqw-dfb optical modulator semiconductor PIN photodiode 5ghz PIN photodiode ps

    FLD5

    Abstract: 10 gb laser diode Fujitsu laser
    Text: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection


    Original     		PDF 550nm FLD5F20NP 10Gb/s. FCSI0202M200 FLD5 10 gb laser diode Fujitsu laser

    ZE 004

    Abstract: FMM5052ZE SSOP-16
    Text: FMM5052ZE MMIC Power Amplifier FEATURES • Wide Frequency Band: 0.8 to 2.7GHz • Medium Power: P1dB=26dBm Typ. @ f=0.8 - 2.7GHz • High Linear Gain: GL=19dB (Typ.) @ f=0.8 - 2.7GHz • Impedance Matched Zin/Zout = 50Ω • Wide Operating Temperature Range


    Original     		PDF FMM5052ZE 26dBm SSOP-16 FMM5052ZE ZE 004

    fujitsu gaas fet

    Abstract: FLL410IK-3C fujitsu GHz gaas fet Fujitsu Quantum Devices fujitsu gaas fet L-band ED-4701
    Text: FLL410IK-3C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is


    Original     		PDF FLL410IK-3C FLL410IK-3C fujitsu gaas fet fujitsu GHz gaas fet Fujitsu Quantum Devices fujitsu gaas fet L-band ED-4701

    TM 1628 IC

    Abstract: IC TM 1628 l8730 L8850 FLD5F15CX-L8750 FLD5F15CX-L8960 FLD5F15CX-L9010 IC TM 1628 Datasheet FLD5F*cx FLD5F15CX-L8920
    Text: 1,550nm MQW-DFB Continuous Wave Laser FLD5F15CX-L FEATURES • Continuous Wave CW MQW DFB Laser • Output Power: 16dBm • Available at L band ITU-T Wavelengths between 1570.416 - 1608.329nm • Built-in TEC, Thermistor, Monitor PD and Optical Isolator


    Original     		PDF 550nm FLD5F15CX-L 16dBm 329nm 16dBm) LiNb03 FCSI1202M200 TM 1628 IC IC TM 1628 l8730 L8850 FLD5F15CX-L8750 FLD5F15CX-L8960 FLD5F15CX-L9010 IC TM 1628 Datasheet FLD5F*cx FLD5F15CX-L8920

    TM 1628 IC

    Abstract: h936 FLD5F15CX-H9210 ic tm 1628 FLD5F15CX-H9110 h9540 FLD5F15CX-H9340 FLD5F15CX-H9510 H932 FLD5F15CX-H9320
    Text: 1,550nm MQW-DFB Continuous Wave Laser FLD5F15CX-H FEATURES • Continuous Wave CW MQW DFB Laser • Output Power: 16dBm • Available at C band ITU-T Wavelengths between 1528.773 -1569.594nm • Built-in TEC, Thermistor, Monitor PD and Optical Isolator • Polarization preserving (PANDA) fiber


    Original     		PDF 550nm FLD5F15CX-H 16dBm 594nm 16dBm) LiNb03 FCSI1202M200 TM 1628 IC h936 FLD5F15CX-H9210 ic tm 1628 FLD5F15CX-H9110 h9540 FLD5F15CX-H9340 FLD5F15CX-H9510 H932 FLD5F15CX-H9320

    fujitsu gaas fet

    Abstract: FLL410IK-4C fujitsu gaas fet L-band ED-4701 Quantum Devices fujitsu GHz gaas fet
    Text: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is


    Original     		PDF FLL410IK-4C FLL410IK-4C fujitsu gaas fet fujitsu gaas fet L-band ED-4701 Quantum Devices fujitsu GHz gaas fet

    FLD3F12JL

    Abstract: No abstract text available
    Text: 1,310nm MQW-DFB Return Path Laser FLD3F12JL FEATURES BENEFITS • Multiple Quantum Well MQW DFB Laser Loading • Wide operating temperature without TEC Characteristics • Built-in optical isolator • Coaxial module with vertical flange • 4 Channels video/data


    Original     		PDF 310nm FLD3F12JL FLD3F12JL FCSI0200M200

    ir photodiode wavelength ingaas

    Abstract: FID3Z1KX pin Photodiode 2 GHz STM-16
    Text: InGaAs PIN Photodiode FID3Z1KX/LX FEATURES • • • • • Data rates up to 2.5 Gb/s High Quantum Efficiency: 0.8A/W at 1,310nm Low dark current: 0.1 nA Photosensitive area: 50|am diameter Wide spectral response range: 900nm to 1,600nm APPLICATIONS • Optical transmission system: STM-1 OC-3 ,


    OCR Scan     		PDF 310nm 900nm 600nm OC-12) STM-16 OC-48) 550nm FCSI0199M200 ir photodiode wavelength ingaas FID3Z1KX pin Photodiode 2 GHz STM-16