Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FUJITSU L BAND AMPLIFIER Search Results

    FUJITSU L BAND AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy

    FUJITSU L BAND AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GSC371BAL2000

    Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
    Text: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band


    Original     		PDF 1930MHz FLL400IP-2 1930-1990MHz 720mA 96GHz GSC371BAL2000 Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
    Text: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL600IQ-2C 151mA FUJITSU MICROWAVE TRANSISTOR 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power
    Text: FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 8W Average Pout • Easy tuning for Power, WCDMA ACPR and IMD • Over 80 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL800IQ-2C Descriptio10 220mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 understanding thermal basics for microwave power

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
    Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band


    Original     		PDF FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
    Text: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD


    Original     		PDF IMT2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
    Text: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B push pull class AB RF linear L band stub tuner matching

    sampa

    Abstract: AY-3-0214 top octave generator ic
    Text: FU J I TS U M I C R O E L E C T R O N I C S 374^2 47E D M ay 1991 Edition 1.0 DATA S H E E T : 0 0 1 Ô 37 1 S « F H I _ FUJITSU MB86460A MODEM WITH INTERNAL VOICE-BAND FILTERS CMOS MODEM CIRCUIT WITH INTERNAL VOICE-BAND FILTERS FOR CORDLESS TELEPHONES The MB86460 MSK Minimum Shift Keying modem IC contains a 1200-band MSK


    OCR Scan     		PDF MB86460A MB86460 1200-band 48-LEAD FPT-48-M02) sampa AY-3-0214 top octave generator ic

    UA 733

    Abstract: MB3501
    Text: FUJITSU MB3501 WIDE BAND VIDEO AMPLIFIER Ju ly 1988 E d itio n 2.0 WIDE BAND VIDEO AMPLIFIER The M B 350 1 is a m o n o lith ic d iffe re n tia l in p u t, d iffe r e n tia l o u tp u t, w id e b a n d vid eo a m p lifie r. O w in g to a d o p tio n o f feedback c ir c u itr y , w id e b a n d w id th and


    OCR Scan     		PDF MB3501 MB3501 B3501 14003S UA 733

    fujitsu power amplifier GHz

    Abstract: fujitsu l band amplifier fujitsu rf power amplifier l band
    Text: FMM5021MU 1.5GHz MMIC Driver Amplifier DESCRIPTION The FMM5021MU is a MMIC driver amplifier with gain control that is designed for Personal Digital Cellular PDC applications in the 1,5GHz band. The driver amplifier includes three amplifier stages and a variable attenuator.


    OCR Scan     		PDF FMM5021MU FMM5021MU -60dBc 120mA FCSI0598M200 fujitsu power amplifier GHz fujitsu l band amplifier fujitsu rf power amplifier l band

    FMM5024ML

    Abstract: No abstract text available
    Text: FMM5024ML 800MHz MMIC Driver Amplifier DESCRIPTION The FMM5024ML is a MMIC driver amplifier with gain control and is designed for applications in the 800 to 1000 MHz band. The driver amplifier includes two amplifier stages and a variable attenuator. FEATURES


    OCR Scan     		PDF FMM5024ML 800MHz FMM5024ML -55dBc FCSI0697M200

    Untitled

    Abstract: No abstract text available
    Text: FMM5512ZE 800MHz Band GaAs Power Amplifier MMIC DESCRIPTION The FMM5512ZE contains a two-stage amplifier that is designed for AMPS applications in the 824 to 849MHz frequency range. This product is well suited for applications where high power, high efficiency, low noise power, and single power supply are required.


    OCR Scan     		PDF FMM5512ZE 800MHz FMM5512ZE 849MHz SSOP-16 FCSI0597M200

    fujitsu mmic ic

    Abstract: k BAND LOW PHASE gaAs FET
    Text: FMM5509ZE 800MHz Band GaAs Power Amplifier MMIC DESCRIPTION The FMM5509ZE contains a two-stage amplifier that is designed for AMPS applications in the 824 to 849MHz frequency range. This product is well suited for applications where high power, high efficiency, low noise power, and single power supply are


    OCR Scan     		PDF FMM5509ZE 800MHz FMM5509ZE 849MHz SSOP-16 FCSI0598M200 fujitsu mmic ic k BAND LOW PHASE gaAs FET

    2329500

    Abstract: No abstract text available
    Text: FMM5508ZE 1800MHz Band GaAs Power Amplifier MMIC DESCRIPTION The FMM5508ZE contains a three-stage amplifier that is designed for 4.8V PCN/PCS applications in the 1710-1785MHz and 1850-1910MHz frequency range. This product is well suited for applications where high power, high efficiency, low noise power, and sin­


    OCR Scan     		PDF FMM5508ZE 1800MHz 1710-1785MHz 1850-1910MHz SSOP-16 FCSI0597M200 2329500

    Untitled

    Abstract: No abstract text available
    Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1


    OCR Scan     		PDF FMM5804X FCSI0599M200

    n 4113

    Abstract: No abstract text available
    Text: FUJITSU MAGNETIC DISK HEAD AMPLIFIER MB 4111 MB 4112 MB 4113 March 1984 E dition 2.0 M AGNETIC DISK HEAD A M PLIFIER The Fujitsu MB 4 1 1 1/MB 4 1 12/MB 4113 is a m onolithic bipolar integrated circuit optim ized fo r high performance application to disk head systems.


    OCR Scan     		PDF 12/MB 4111/MB interfa272 n 4113

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK

    B3604

    Abstract: No abstract text available
    Text: Aprì! 1990 Edition 2.0 FUJITSU DATA SH EET '• MB3604 HIGH FREQUENCY OPERATIONAL AMPLIFIER HIGH FREQUENCY SINGLE OPERATIONAL AMPLIFIER The Fujitsu M B3604 is a m o n o lith ic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.


    OCR Scan     		PDF MB3604 B3604 DIP-16P-M04 D-6000 PV0014-904A2

    Untitled

    Abstract: No abstract text available
    Text: F U J IT S U December 1988 Edition 3.0 MAGNETIC DISK HEAD AMPLIFIER The Fujitsu MB4111/MB4113 is a monolithic bipolar integrated circuit opti­ mized for high performance application to disk head systems. The MB4111/MB4113 is featured with the following four major functions to


    OCR Scan     		PDF MB4111/MB4113 MB4113 B4111 B4113 MB4111 24-PAD

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU Decem ber 1988 Ed itio n 3 .0 MAGNETIC DISK HEAD AMPLIFIER The Fu jitsu M B 4 1 11/M B4113 is a m onolithic bipolar integrated circu it opti­ mized fo r high performance application to disk head systems. The M B 41 1 1/M B4113 is featured w ith the follow ing four major functions to


    OCR Scan     		PDF B4113 Tempe627 MB4111 MB4113 24-PAD FPT-24C-F0T)

    Untitled

    Abstract: No abstract text available
    Text: FMM5026ML 1.9GHz MMIC Driver Amplifier DESCRIPTION The FMM5026ML is a MMIC driver amplifier that includes two amplifier stages and a variable attenuator. This new product is uniquely suited for Personal Communications System PCS/PCN applications in the 1.8 to


    OCR Scan     		PDF FMM5026ML FMM5026ML FCSI0198M200

    Untitled

    Abstract: No abstract text available
    Text: ¡0 FUJITSU MICROELECTRONICS 31E D D 37 MT7ti2 Ga iS L >4 0 b HBFMI 010002850201000201000201000201020100 HIGH FREQ UENCY O PE R A TIO N A L A M P L IFIE R The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology.


    OCR Scan     		PDF MB3604 B3604 0Q15b4b T-79-07-10 16-LEAD DIP-16C-C01)

    Untitled

    Abstract: No abstract text available
    Text: F U JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I I MB3604 Decem ber 1987 E d itio n 1.0 HIGH FREQUENCY OPERATIONAL AMPLIFIER The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology. The MB3604 has differential inputs, single-end output, and an on-chip buffer


    OCR Scan     		PDF MB3604 MB3604 16-LEAD DIP-16P-M04)

    Untitled

    Abstract: No abstract text available
    Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1,5dB MAX. @ f=20GHz NF=1.8dB (MAX.) @ f=24GHz NF=2.3dB (MAX.) @ f=28GHz • High Associated Gain: Gas=15.0dB (MIN.) @ f=20GHz Gas=12.0dB (MIN.) @ f=24GHz Gas=9.0dB (MIN.) @f=28GHz


    OCR Scan     		PDF FMM5701X 24GHz 20GHz 24GHz 28GHz 18-28GHz FMM5701X