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    FUJITSU FRM3Z231KT INGAAS Search Results

    FUJITSU FRM3Z231KT INGAAS Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation

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    Fujitsu FRM3Z231KT InGaAs

    Abstract: Fujitsu FRM3Z231KT FRM3Z231KT
    Text: InGaAs-PIN/Preamp Receiver FRM3Z231KT/LT FEATURES • • • • Data rate up to 2.5Gb/s -23dBm typ. sensitivity 30µm active area PIN chip with GaAs pre-amplifier Small co-axial package with multi-mode fiber KT APPLICATIONS • High bit rate short haul optical transmission systems


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    PDF FRM3Z231KT/LT -23dBm FCSI0199M200 Fujitsu FRM3Z231KT InGaAs Fujitsu FRM3Z231KT FRM3Z231KT

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    Abstract: No abstract text available
    Text: InGaAs-PIN/Preamp Receiver FRM3Z231KT/LT FEATURES • • • • Data rate up to 2.5Gb/s -23dBm typ. sensitivity 30|jm active area PIN chip with GaAs pre-amplifier Small co-axial package with multi-mode fiber APPLICATIONS • High bit rate short haul optical transmission systems


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    PDF FRM3Z231 -23dBm -22dBm, 100ps/div 550nm