fuji transistor modules
Abstract: No abstract text available
Text: HYBRID ICS FOR BASE DRIVING OF POWER TRANSISTOR MODULE Fuji Base Driver Module Hybrid IC EXB356 Abstract The EXB356 is a hybrid - IC base driver used in Fuji transistor modules. It includes opto-couplers for the electrical isolation between in-put side and output side
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EXR356
10-pin,
fuji transistor modules
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NAME : E R W 0 4 - 0 6 0 SPEC. No. :_ _ _ . DATE_ :_ Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE APPROVED Fuji Electric C o j j t d
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0257-R-004a
TD-Z20AC
20kHz
Duty50X
ERWQ4-060
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2SK2808-01MR
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2808-01 MR - SPÊC.NO. Fuji Electric CoMLtd. This Specification is subject to change without notice. DATE ' NAME APPROVED Fuji Electric Co.,Ltd. CHECKED I ' ' I DWG. NO. D RA W N / 1/0 Y 0257 -R -00 4a
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2SK2808-01MR
0257-R-004a
To-220F
0257-R-003a
0257-R-003a
2SK2808-01MR
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NAME : E R W 0 4 - 0 6 0 SPEC. No. :_ _ _ . DATE_ :_ Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE APPROVED Fuji Electric C o j j t d
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0257-R-004a
TD-Z20AC
20kHz
Duty50X
ERWQ4-060
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Untitled
Abstract: No abstract text available
Text: ThI« m alarial and ha Information haraln la 1ha praparty of Fuji Elaelrio Co.pltd . Thay »hall ba nalthar raproduead, coplad, lanl. or dlacloaad In any way whataoavar for tha uta of any third party nor uaad for lh« manufacturing purpoaai w ithout tha axpraai wrtttan conMnt of Fuji ElaoOHc Co.Ltd.
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6MBP15RY060
MS6M0362
H04-004-07
6MBP15RY060.
6MBP15RY060)
H04-004-03
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EXB357
Abstract: PW-20 2sd1157 2SD115 PW20
Text: 1 1.2 * Fuji Base Driver Module Hybrid IC EXR357 Abstract The EXB357 is a hybrid-IC base driver used in FUJI transistor modules. It includes opto-couplers for the electrical isolation between in-put side and out-put side of base drive circuit and can drive a wide range of
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EXR357
EXB357
12-pin,
2SD1157
2SR757
PW-20
2SD115
PW20
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fuji ipm
Abstract: ipm application note fuji 6MBP30RH060 fuji capacitor ipm application fuji 30a GDGS532 A05 zener fin heat sink igbt fuji igbt transistor modules fuji transistor modules
Text: Thla matarla! and ha Information haraln I» lha preparly of Fuji Glaatrlc Co,Lid. Thay ahailba nalthar reproduced, ooplad, lant, or disclosed In any way whatsoever for tha vie of any third party nor uaad for tha manufacturing purpose* w ithout tha expre»» written oonaant of Fuji EiectrlQ Co,Ltd.
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6MBP30RH060
MS6M0387
MS6M0387
H04-004-07
H04-004-Q3
6MBP30RH060.
6MBP30RH060)
223fl7TS
fuji ipm
ipm application note fuji
6MBP30RH060
fuji capacitor
ipm application fuji 30a
GDGS532
A05 zener
fin heat sink igbt
fuji igbt transistor modules
fuji transistor modules
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fuji ipm
Abstract: 6MBP15RY060 KBFA
Text: ThI« m alarial and ha Information haraln la 1ha praparty of Fuji Elaelrio Co.pltd . Thay »hall ba nalthar raproduead, coplad, lanl. or dlacloaad In any way whataoavar for tha uta of any third party nor uaad for lh« manufacturing purpoaai w ithout tha axpraai wrtttan conMnt of Fuji ElaoOHc Co.Ltd.
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6MBP15RY060
MS6M0362
MS6M0362
6MBP15RY060.
6MBP15RY060)
H04-004-03
fuji ipm
6MBP15RY060
KBFA
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g47e
Abstract: F4084 1MBH10D-060 1MBH10D-060-S06TT
Text: third parly nor used or the m anufacturing purposes Ihe express written consent ol Fuji Electric Co.Ltd. w ith o u t This rnnlorlnl nnd (he Information heroin is Ihe properly of Fuji Electric C o .,U d . They slinll l>e neither re p ru d u cu d , c o p ie d ,
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1MBH10D-060-S06TT
MS5F-4084
June-11-1998
S5F4084
H04-0Ã
July-15-1997
MS5F4034
MS5F40S4
g47e
F4084
1MBH10D-060
1MBH10D-060-S06TT
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Untitled
Abstract: No abstract text available
Text: third parly nor used or the m anufacturing purposes Ihe express written consent ol Fuji Electric Co.Ltd. w ith o u t This rnnlorlnl nnd (he Information heroin is Ihe properly of Fuji Electric C o .,U d . They slinll l>e neither re p ru d u cu d , c o p ie d ,
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MS5F-4084
1MBH10D-060-S06TT
June-11-1998
MS5F4084
H04-004-05
F4034
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GFIJ
Abstract: No abstract text available
Text: S P E C I F I C A T I O N TENTAT DEVICE NAME : TYPE NAME : IVE P o w e r MOSFET 2 S K 2 7 5 4 - Q 1 L . S SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CoJ-ld DRAWN CHECKED
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2SK2754-01L
D3kiiE75s£
GFIJ
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2SK2651-01MR
Abstract: 2SK2651
Text: S P E C I F I C A T I O N DEVICE NAME TYPE NANE Powe r M O S F ET 2 S K 2 6 5 1- 0 1M R SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric CajJcL CHECKED 12 Y 0257-R-004a 1 . Scope
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2SK2651-01MR
0257-R-004a
T0-220FOutview
2SK2651-01MR
2SK2651
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rjh igbt
Abstract: HF IGBT 7MBP150RA060
Text: FUJI a - 7 D7 ^ h [IT L S E T T Ir jO E FUJI NEW SEMICONDUCTOR PRODUCTS 1^9 IGBT-IPM 14# Jk ^ 3 6 0 0 V /15 0 A /7 in one-package R series 7MBP150RA060 Features IPM-N y V - X t S fô '& V & Z / ^ y ' r - - y IG B T 5 1 7 y < D T j f à & ì & m m m n t c ¿
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00V/150A/7
7MBP150RA060
IGBT51
GQ30FIS
rjh igbt
HF IGBT
7MBP150RA060
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fbii
Abstract: 7MBP50RA060 8011 fuji igbt SS200
Text: FUJI B lL tlE T F Ü S á O E FUJI NEW SEMICONDUCTOR PRODUCTS IG B T -IP M M I m ±m st 6 0 0 V /5 0 A /7 in one-package R s e r ie s 7MBP50RA060 Features i& M & t V 7 y I PM- N y U - X t K M * # & 3 A 7 ^ - v I GBT ^ - y 7°C0Tj J: 5 <t ¡ t i t 1114 7)U S
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00V/50A/7
7MBP50RA060
70COTj
1997-BO30FIS
fbii
7MBP50RA060
8011
fuji igbt
SS200
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fuji IGBT
Abstract: 6mbp50r
Text: FUJI 2 7 D ? y h FUJI NEW SEMICONDUCTOR PRODUCTS IG B T -IP M 14# H 6MBP50RA060 h X < 7 51 > 7 IPM-N '> i; - X 7 R s e r ie s Features fé ílífc t V 7 IG B T ^ 6 0 0 V /5 0 A /6 in one-package 1 !§B'I4 7 & v 7<7)Tj J: 5 K B fM tg E iS ;£ i:l 5 í s 3 £ 1 4 0 ) Ü í i
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6MBP50RA060
1997-0H3OFIS
fuji IGBT
6mbp50r
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1823-01R
Abstract: 2SK1823-01R T151 FA-MT A2260
Text: 2SK1823-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES I Features Outline Drawings ►High current ►-ow on-resistance ►slo secondary breakdown ►.ow driving power ►High forward Transconductance ►\valanche-proof ►ncluding G-S Zenner diode
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2SK1823-01R
1823-01R
2SK1823-01R
T151
FA-MT
A2260
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pj 899 diode
Abstract: pj 899 2SK899 SC-65 T151 A213
Text: 2SK899 FUJI POWER MOS FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators • UPS
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2SK899
SC-65
Tc-25
pj 899 diode
pj 899
2SK899
SC-65
T151
A213
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Untitled
Abstract: No abstract text available
Text: cP June 1990 Edition 2.0 DATA SHEET = FUJI'/ - MB3854 BI-DIRECTIONAL MOTOR DRIVER BI-DIRECTIONAL MOTOR DRIVER The Fujitsu MB3854 is a low voltage motor driver with forward/reverse control capability for motors such as those in auto focus film advancing mechanism,
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MB3854
MB3854
D-6000
PV0058-906A2
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AFFV
Abstract: No abstract text available
Text: FUJI 2SK2754-01 L,S N-channel MOS-FET FAP-IIS Series > Features - 0,65£2 450V 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications
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2SK2754-01
-i-i-t-L10
AFFV
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2SK901
Abstract: A2-19 SC-65 T151 TE 901
Text: 2SK901 ">T FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - F-I SERIES • Features , ■Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • U PS • DC DC converters
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2SK901
SC-65
E9TS30
2SK901
A2-19
SC-65
T151
TE 901
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pj 899 diode
Abstract: 2SK899 pj 899 SC-65 T151
Text: 2SK899 FUJI POW ER MOS^FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings I Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage •Applications Switching regulators U PS 1DC-DC converters 'General purpose power amplifier
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2SK899
SC-65
Tc-25
pj 899 diode
2SK899
pj 899
SC-65
T151
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CG51754
Abstract: fujitsu asic CE51654 CG51114 CG51284 CG51364 CG51484 CG51214 CG51654 CG-51
Text: cP FUJI' Novem ber 1995 Edition 1.5 DATA SHEET = - ' CG51/CE51 SERIES 3V, 0.50 MICRON HIGH PERFORMANCE/LOW POWER CMOS GATE ARRAYS DESCRIPTION The Fujitsu CG51/CE51 is a series of ultra high performance CMOS gate arrays. The CG51 is a high density Sea-of-Gates
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CG51/CE51
CG51754
fujitsu asic
CE51654
CG51114
CG51284
CG51364
CG51484
CG51214
CG51654
CG-51
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Untitled
Abstract: No abstract text available
Text: MB85402-30 MB85W2-40 FUJI 'S TS255-B88Y Nov. 1988 CMOS 16,384 Words x 16-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85402 is a fully decoded, CMOS Static random access memory module comprised of four MB81C75 devices mounted on a 36—pin ceramic board.
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MB85402-30
MB85W2-40
TS255-B88Y
16-Bit
MB85402
MB81C75
MB81C75,
MB85402-30)
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2SK727-01
Abstract: SC-65
Text: 2SK727-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Avalanche-proof ■A pplications • Switching regulators
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2SK727-01
SC-65
2SK727-01
SC-65
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