Untitled
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI450UE-120 Target specification 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit Jun 19 ’02 Y.Kobayashi Jun 19 ’02 S.Miyashita REVISIONS T.Miyasaka
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2MBI450UE-120
MT5F12399
200V/450A
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Untitled
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI200UC-120 Target specification 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit July 9 ‘02 July 9 ‘02 REVISIONS T.Satou S.Miyashita T.Miyasaka
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2MBI200UC-120
MT5F12446
200V/200A
/-15V
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION Tentative target Device Name : IGBT MODULE Type Name : 1MBI600UB-120 Spec. No. : Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 6 ‘03 S.Miyashita T.Miyasaka MT5F 14049 1 3 H04-004-07 1MBI600UB-120 Target specification (Tentative) 1. Outline Drawing ( Unit : mm )
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1MBI600UB-120
H04-004-07
1MBI600UB-120
H04-004-03
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Untitled
Abstract: No abstract text available
Text: Target Specification TENTATIVE (450A/1200V-6in1 IGBT Module) IGBT Module This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
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50A/1200V-6in1
6MBI450U-120
MT5F12331
May-10-
H04-004-03
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Untitled
Abstract: No abstract text available
Text: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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50A/1700V-6in1
6MBI450U-170
MT5F12546
H04-004-003
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Untitled
Abstract: No abstract text available
Text: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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00A/1700V-6in1
6MBI300U-170
MT5F12711
H04-004-003
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Untitled
Abstract: No abstract text available
Text: FUJI SILICON DIODE YA972S6R SPECIFICATION TENTATIVE Ⅰ.MAXIMUM RATINGS Item Symbol Conditions Ratings Units 600 V 10 A 100 A Tj +150 °C Tstg -40 to +150 °C VRRM Repetitive peak reverse voltage Io Average forward current square wave duty=1/2 Tc= °C IFSM Sine wave 10ms,1shot
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YA972S6R
YA972Sâ
Dec-03-â
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Untitled
Abstract: No abstract text available
Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
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00A/1200V-2in1
MT5F16506
2MBI800U4G-120
14-Jul-05
H04-004-007
H04-004-003
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2MBI1200U4G-120
Abstract: ED-4701 MT5F12959
Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
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14-Jul-05
200A/1200V-2in1
2MBI1200U4G-120
MT5F16507
H04-004-007
H04-004-003
2MBI1200U4G-120
ED-4701
MT5F12959
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MT5F12959
Abstract: MT5F ic60
Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
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00A/1200V-2in1
MT5F16505
2MBI600U4G-120
14-Jul-05
H04-004-007
H04-004-003
MT5F12959
MT5F
ic60
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2SK3272-01L
Abstract: DIODE SJ 98
Text: Device Name Type Name Spec. No. DATE CHECKED NAME : DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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2SK3272-01L
MS5F4394
H04-004-05
H04-004-03
DIODE SJ 98
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2SK3270-01
Abstract: No abstract text available
Text: DATE CHECKED Device Name : Type Name : Spec. No. : NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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2SK3270-01
MS5F4344
H04-004-05
H04-004-03
2SK3270-01
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2SK3271
Abstract: 2SK3271-01
Text: Device Name Type Name Spec. No. DATE CHECKED NAME : : : DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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2SK3271-01
MS5F4403
H04-004-05
H04-004-03
2SK3271
2SK3271-01
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fuji igbt
Abstract: 4MBI150T-060 AE 04 equivalent
Text: a Changed the equivalent circuit Oct-24-’02 S.O, T,M 3 4 DATE REVISIONS MA4LE 18 5 6 NAME DRAWN Sep.-26-’02 S.Ogawa CHECKED Sep.-26-’02 S.Miyashita T.Miyasaka DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
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Oct-24-
4MBI150T-060
fuji igbt
4MBI150T-060
AE 04 equivalent
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2MB11
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2MB1150U B -120 Target specification This material and the Information herein is the property of Fuji Electnc Co.Ltd They shall be neither reproduced, copied lent, or disclosed in any way whatsoever for the use of any
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2MB1150U
200V/150A
/150A
200V/150A
MT5F12220
2MB11
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bose amp
Abstract: BOSE 2di50z note 2DI50Z-140 IB07
Text: Ratings and Characteristics of Fuji Power Transistor 2 D I 5 0 2 S — 1 A O TENTATIVE This material and the information herein is the property of Fuji Electric Co.l_td.They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
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MIS5M1273
DIbUZ-14U
MS5M1273
2DI50Z-1
A1973
2DI50Z-140
M35M1273
bose amp
BOSE
2di50z note
2DI50Z-140
IB07
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2MBI150UA-120
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co., Ltd IG B T Developm ent Dept. Section M12 <TENTATIVE> 2 M B I1 5 0 U A -1 2 0 Target specification This material and ihe Information herein is the property of Fuji Electnc Co .ltd They shall be neither reproduced, copied,
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2MBI150UA-120
MT5F12221
200V/150A
2MBI150UA-120
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Untitled
Abstract: No abstract text available
Text: Fuji H itachi Pow er S em iconductor Co.,Ltd IG B T D evelopm ent Dept. Section M12 <TENTATIVE> This material and the information herein is the property of Fuji Electnc Co .Ltd They shall be neither reproduced, copied, lent, or disclosed In any way whatsoever for the use of any
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T5F12DRAWN
MT5F12223
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2MBI200UB-120
Abstract: No abstract text available
Text: Fuji Hitachi P ow er S em iconductor Co., Ltd IG B T D evelopm ent D ept. S ection M12 <TENTATIVE> U-series 2M B I200U B -120 Target specification 1. Outline Drawing ( Unit : mm ) E2. Cl consent of Fuji Electric Co. L td . CÆ 1 2 3 = 0 2 40 -0 2 TUB TYPE TERMINALS
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2MBI200UB-120
MT5F12209
2MBI200UB-120
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M1273
Abstract: No abstract text available
Text: This material and the information herein is the property of Fuji Electric Co.Ltd.They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric C o , Ltd.
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MS5M1273
DIbUZ-14U
2DI50Z-1
RIS5M1273
SS5M127Ï
M1273
M1273
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Untitled
Abstract: No abstract text available
Text: Fuji Hitachi Power Semiconductor Co.,Ltd IG BT Development Dept. Section M12 <TENTATIVE> U -series 2 M B I3 0 0 U C -1 2 0 Target specification 1. Outline Drawing ( Unit : mm ) 28 ;o 2 21 ¡o 2 Mounting hole This material and the Information herein is the properly of
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5F12222
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Untitled
Abstract: No abstract text available
Text: Ratings and characteristics of Fuji I G B T M B T 2 M B I Y 5 — 6 Module (TENTATIVE) 1. Outline Drawing Unit : BB * Isolation ; UJ Voltage : AC 2500 V 1 lim ite Tab type terminals (AMP No.110 equivalent) 9 3 -M 5 DATE CHECKED < 7o,V\ bflE _ I APPROVED
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MT5F4995
MT5F4905
EE3A71B
000E7E1
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ic lm 7500
Abstract: TT 45 N 1400 MT5F10855 fuji IGBT
Text: a ft £ y iS g flf t y p g r o iS S _ k This material and the information herein is the property oJ the express written consent of Fuji Electric Co. Ltd. third party.nor used lor the manufac luring purposes without Fufi Electnc Co .Ltd.They shall be neither reproduced, copied
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MTSF1085S
MT5F10855
ic lm 7500
TT 45 N 1400
MT5F10855
fuji IGBT
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diode T325
Abstract: 2MBI150J-060 JZ 1-1A fuji IGBT
Text: i Ratings and characteristics of Fuji M B I 1 5 0 J T — IG B T 6 MBT Module (TENTATIVE) 1. Ou 11 ine Drawing Unit : mm * Isolation Voltage : AC 2500 V 1 ninute °í I : llí: U s - ìé t 2* â ë lili uni -iülï i n s 1|! jjjsl M UJ -O ÉÉJI Tab type terminals
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